• 진공이야기
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• 제2권2호
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• pp.24-28
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• 2015

The brightness of an electron source, along with the aberrations of an objective lens, determines the image resolution and beam current on samples, which are two important parameters for evaluating the performance of an electron microscope. Here we introduce thermal electron source, Schottky emitter and cold field electron emitter. Thermal electron source is the cheapest and stable electron source but it has the lowest brightness. Schottky emitter is 10000 times brighter than tungsten thermal electron source, but requires ultrahigh vacuum operating condition. Cold field electron emitter is 10 times brighter than Schottky emitters, but it is rather unstable and its operation requires most stringent vacuum condition, hindering its widespread use.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2182-2187
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• 2007

The relative contributions of phonon and electron to the thermal conductivity of silicon film with varying doping density are evaluated from the modified electron-phonon interaction model, which is applicable to the micro/nanoscale simulation of energy transport between energy carriers. The thermal conductivities of intrinsic silicon layer thicknesses from 20 nm to 500 nm are calculated and extended to the variation in n-type doping densities from 1.0 ${\times}$ $10^{18}$ to 5.0 ${\times}$ $10^{20}$ $cm^{-3}$, which agree well with the experimental data and theoretical model. From simulation results, the phonon and electron contributions to thermal conductivity are extracted. The electron contribution in the silicon is found to be not negligible above $10^{19}$ $cm^{-3}$, which can be classified as semimetal or metal by the value of its electrical resistivity at room temperature. The thermal conductivity due to electron is about 57.2% of the total thermal conductivity at doping concentration 5.0 ${\times}$ $10^{20}$ $cm^{-3}$ and silicon film thickness 100 nm.

• 한국산업정보학회:학술대회논문집
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• 한국산업정보학회 1997년도 추계학술대회 발표논문집:21세기를 향한 정보통신 기술의 전망
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• pp.451-462
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• 1997

A 2-dimensional numerical analysis is presented for thermal-electron heat conduction effects upon the electron transport and the drain current-voltage characteristics of submicron GaAs MESFETs, based on the use of a nonstationary hydrodynamic transport model. It is shown that for submicron GaAs MESFETs, electron heat conduction effects are significant on their internal electronic properties and also drain current-voltage characteristics. Due to electron heat conduction effects, the electron energy is greatly one-djmensionalized over the entire device region. Also, the drain current decreases continuously with increasing thermal conductivity in the saturation region of large drain voltages above 1 V. However, the opposite trend is observed in the linear region of small drain voltages below 1 V. Accordingly, for a large thermal conductivity, negative differential resistance drain current characteristics are observed with a pronounced peak of current at the drain voltage of 1 V. On the contrary, for zero thermal conductivity, a Gunn oscillation characteristic is observed at drain voltages above 2 V under a zero gate bias condition.

• 한국정밀공학회지
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• 제16권8호
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• pp.138-148
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• 1999

Thermal deformations of tension mask under localized heating are analyzed using finite element method and electron beam landing shifts are predicted by the analysis results. In CRT, electron beam landing shifts due to thermal deformations of the tension mask make the color purity of screen worse. In order to get the final results of thermal deformations, firstly the tension processes of the mask and following welding processes between the tensional mask and rail must be analyzed sequentially. And then, nonlinear transient thermo-elastic finite element analysis is performed on every part inside CRT including tension mask, wherein thermal radiation is a main heat transfer mechanism. Because the tension mask has numerous slits, the effective thermal conductivity and effective and effective elastic modulus is calculated, and the tension mask is modeled as a shell without slits. From the displacement results of tension mask, electron beam landing shifts is calculated directly. Experiments are performed to confirm our analysis results. Temperature distributions and beam landing shifts of tension mask are measured and the results are in good agreement with those of analyses.

• 대한기계학회논문집A
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• 제26권11호
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• pp.2297-2304
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• 2002

Two-dimensional and three-dimensional finite element methods have been used to analyze the deformation behavior of a shadow mask due to thermal and tension load. The shadow mask inside the Braun tube of a TV set has numerous slits through which the electron beams are guided to land on the designed phosphor of red, green or blue. Its thermal deformation therefore causes landing shift of the electron beam and results in decolorization of a screen. For the realistic finite element analysis, the effective thermal conductivity and the effective elastic modulus arc calculated, and then the shadow mask is modeled as shell without slits. Next a transient thermal analysis of the shadow mask is performed, wherein thermal radiation is a major heat transfer mechanism. Analysis of the resulting thermal deformation is followed, from which the landing shift of the electron beam is obtained. The present finite element scheme may be efficiently used to reduce thermal deformation of a shadow mask and in developing prototypes of a large screen flat TV.

• 접착 및 계면
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• 제11권4호
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• pp.162-167
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• 2010

본 연구에서는 셀룰로스계 섬유인 황마(jute)의 화학적 특성 및 열적 특성에 미치는 전자빔조사의 영향을 원소분석, ESR분석, ATR-FTIR 분광분석, 열중량분석 그리고 열기계분석을 통하여 탐구하였다. 전자빔 조사는 전자빔터널 내에서 콘베이어 카트를 이용한 연속식 방법에 의해 2~100 kGy까지 다양한 세기의 전자빔이 황마섬유다발에 일정하게 행하였다. 전자빔 처리는 황마섬유의 화학조성을 다소 변화시켰으며, 전자빔세기가 커질수록 황마섬유에 형성된 라디칼이 증가하는 것으로 확인되었다. 그러나 전자빔 조사는 황마섬유표면의 화학관능기를 크게 변화시키지 않는 것으로 판단되었다. 또한 전자빔 조사는 황마섬유의 열안정성과 열수축/팽창 거동에 영향을 주었으며, 그 거동은 전자빔세기에 의존하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.83-83
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• 2010

This study investigates the thermal and mechanical properties of insulation elements through mixing epoxy based micro- and nano particles. Regarding thermal properties, DSC and DMA were used to calculate crosslinking densities for various types of insulation elements. In a mechanical property of bending strength, shape and scale parameters were obtained using the Weibull plot. This study obtained the most excellent results of scale parameters, such as Vol 3.2%, in the bending strength of EMNCs.

• 방사선산업학회지
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• 제6권1호
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• pp.55-59
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• 2012

Polyacrylonitrile (PAN)-based carbon fibers have been widely used due to their unique chemical, electrical, and mechanical properties. Electron beam irradiation has been extensively employed as means of altering properties of polymeric materials. Electron beam irradiation can induce chemical reactions in materials without any catalyst. Electron beam irradiation may be useful in accelerating the thermal compression stabilization of PAN nanofibers. To investigate the irradiation effect on PAN fibers, PAN nanofibers were irradiated by electron beam at 1,000~5,000 kGy. Irradiated and non-irradiated PAN nanofibers were heated at 180 and $220^{\circ}C$ without applying pressure for 15 min. Then 1 metric ton has been applied for 5 min. SEM images have been found that the fiber kept its morphological behavior after the hot pressing up to electron beam irradiated 1,000 kGy. DSC thermograms showed that the peak temperatures of the exothermic reactions were found to decrease with increasing electron beam irradiation doses and temperature. FT-IR spectra have been found to decrease $C{\equiv}N$ stretch band with increasing the electron beam irradiation dose. These results indicate that the modification of PAN via reactions such as cyclization is significantly enhanced by electron beam irradiation and thermal compression technique.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권8호
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• pp.409-413
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• 2001

In the electron-gun of CRT, the Mo-tip FEA was employed as cold cathode in order to replace the conventional thermal cathode. The Mo-tip FEA was designed and fabricated according to CRT specification and mounted on the electron-gun. It was known that fabricated cold cathode electron-gun showed better performance in terms of maximum emission current and switch-on time when compared with the ones of thermal cathode electron-gun, but some geometrical structures in the inside of electron-gun must be changed to reduce the gate leakage current. Finally, the potential applicability was guaranteed by means of operating the 19 inch-sized LG-color CRT using the fabricated cold cathode electron-gun.

• 폴리머
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• 제26권1호
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• pp.80-87
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• 2002

전자선 및 열경화 방법을 사용한 에폭시 수지의 경화거동과 열안정성 효과를 알아보기 위하여 비교 연구를 수행하였다. 본 연구에서는, benzylquinoxalinium hexafluoroantimonate(BQH)가 에폭시 수지의 잠재성 양이온 촉매로서 사용되었다. 열중량분석(TGA)에 의하면, Coats-Redfern 방법에 기초한 분해활성화 에너지는 열경화 방법의 경우가 더 높게 나타났다. 이것은 열로 경화되어진 에폭시 수지의 높은 가교 밀도로 인해 열확산 속도가 느려졌기 때문으로 사료된다. 그러나, 전자선 방법으로 경화되어진 에폭시 수지에서는 안정한 짧은 고리구조, 적분열분해온도, 그리고 높은 충격강도를 위한 최종적인 연성 특성을 향상시키는 수산화기의 증가가 근적외선 분광기(NIRS) 측정으로 관찰되었다.