• Title/Summary/Keyword: Thermal drift

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Using MZIs for Optical PSBT Transmissions: Requirements for Thermal Stabilization

  • Ducournau, Guillaume;Latry, Olivier;Ketata, Mohamed
    • ETRI Journal
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    • v.28 no.5
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    • pp.615-620
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    • 2006
  • In this paper, we discuss the quantification of Mach-Zehnder interferometer (MZI) thermal stabilization which is needed in optical phase shaped binary transmission (PSBT) links. Considering the thermo-optic and thermal expansion effects, we revisit the analytical expression for the thermal drift (GHz/$^{\circ}C$) of the MZI center frequency (denoted here by the 'MZI spectral drift'). An MZI is then used in an experimental transmission system using the optical PSBT format. We study the effect of spectral MZI drift by using a thermally stabilized interferometer and applying a frequency shift to the optical carrier. By using the thermal drift coefficient of the MZI, we find that to ensure low bit error rate fluctuations due to the MZI drift, the thermal stabilization of the device must have an accuracy of $0.5^{\circ}C$.

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Biased Thermal Stress 인가에 의한 TSV 용 Cu 확산방지막 Ti를 통한 Cu drift 측정

  • Seo, Seung-Ho;Jin, Gwang-Seon;Lee, Han-Gyeol;Lee, Won-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.179-179
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    • 2011
  • 관통전극(TSV, Trough Silicon Via) 기술은 전자부품의 소형화, 고성능화, 생산성 향상을 이룰 수 있는 기술이다. Cu는 현재 배선 기술에 적용되고 있고 전기적 저항이 낮아서 TSV filling 재료로 사용된다. 하지만 확산 방지막에 의해 완벽히 감싸지지 않는다면, Cu+은 빠르게 절연막을 통과하여 Si 웨이퍼로 확산된다. 이런 현상은 절연막의 누설과 소자의 오동작 등의 신뢰성 문제를 일으킬 수 있다. 현재 TSV의 제조와 열 및 기계적 응력에 관한 연구는 활발히 진행되고 있으나 Biased-Thermal Stress(BTS) 조건하의 Cu 확산에 관한 연구는 활발하지 않는 것이 실정이다. 이를 위해 본 연구에서는 TSV용 Cu 확산 방지막 Ti에 대해 Cu+의 drift 억제 특성을 조사하였다. 실험을 위해 Cu/확산 방지막/Thermal oxide/n-type Si의 평판 구조를 제작하였고 확산 방지막의 두께에 따른 영향을 조사하기 위해 Ti의 두께를 10 nm에서 100 nm까지 변화하였으며 기존 Cu 배선 공정에서 사용되는 확산 방지막 Ta와 비교하였다. 그리고 Cu+의 drift 측정을 위해 Biased-Thermal Stress 조건(Thermal stress: $275^{\circ}C$, Bias stress: +2MV/cm)에서 Capacitance 및 Timedependent dielectric breakdown(TDDB)를 측정하였다. 그 결과 Time-To Failure(TTF)를 이용하여 Cu+의 drift를 측정할 수 있었으며, 확산 방지막의 두께가 증가할수록 TTF가 증가하였고 물질에 따라 TTF가 변화하였다. 따라서 평판 구조를 이용한 본 실험의 Cu+의 drift 측정 방법은 향후 TSV 구조에서도 적용 가능한 방법으로 생각된다.

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Use of a capacitance voltage technique to study copper drift diffusion in low-k polyimide (C-V Technique을 이용한 low-k polyimide로의 구리의 drift diffusion 연구)

  • Choi, Yong-Ho;Lee, Heon-Yong;Kim, Jee-Gyun;Kim, Jung-Woo;Kim, Yoo-Kyuong;Park, Jin-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.137-140
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    • 2003
  • Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

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A Comparative Study on Cu Drift Diffusion of Low-k Dielectrics and Thermal Oxide by use of BTS Technique (BTS 방법을 사용한 Low-K 유전체 물질들과 산화막의 Cu 드리프트 확산에 대한 비교 연구)

  • Chu, Soon-Nam;Kwon, Jung-Youl;Kim, Jang-Won;Park, Jung-Cheul;Lee, Heon-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.2
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    • pp.106-112
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    • 2007
  • Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

An Experimental Study on the Detection Characteristic of Draft Ice by Thermography System (열화상 시스템에 의한 유빙의 탐지특성에 관한 실험적 연구)

  • Cho, Yong-Jin
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.5
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    • pp.302-307
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    • 2017
  • Draft ice in polar regions is formed due to sea level changes and various environmental factors cause damage due to collision with offshore plants and ships for resource development. Drift ice in polar regions is a potential source of accidents for offshore plants that perform long-term operations in one place, as well as on the ship. To prevent accidents with drift ice, offshore plants and ships in polar regions use satellite image information and detection radar to detect drift ice. However, the inability to use visible satellite images at night significantly lowers the detection probability by radar for small drift ice. In this study, we used a thermal imaging system which can be operated day and night for the detection of drift ice, and carried out an experimental study on the detection characteristics of drift ice. To examine the night operation of the thermal imaging system, the experimental condition was set and the thermal image was measured according to the measurement angle change. Under this condition, the correlation was analyzed by theoretical calculating the radiant energy of the drift ice and the sea water.

Research on the Experiment Methods for the Compensation of Thermal Distortion of Machine Tool Spindle (공작기계 주축 열변형 보정을 위한 실험방법에 관한 연구)

  • 고태조;김희술;김형식;김선호
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.375-379
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    • 1997
  • Thermal drift of the machine tool spindle due to temperature increase dominates the major source of the machine tool error. To compensate the thermal errors, software based error correction methods could be implemented. In th~s case, we need model to map the relationship between temperature and thermal distortion. Traditionally, two or three different methods have been trled: step increase of spindle speed, constant, random. The latter two methods are described in the document of ISOlDIS230-3. In this research, three different methods were verified through the experiments from the viewpoint of compensation of thermal distortion. Constant spindle speed turned out good enough for monitoring the behavior of the thermal drift and modeling the relationship between temperature and thermal distortion.

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Practical Issues on In Situ Heating Experiments in Transmission Electron Microscope (투과전자현미경 내 직접 가열 실험에서의 실험적 문제들)

  • Kim, Young-Min;Kim, Jin-Gyu;Kim, Yang-Soo;Oh, Sang Ho;Kim, Youn-Joong
    • Applied Microscopy
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    • v.38 no.4
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    • pp.383-386
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    • 2008
  • In performing in situ heating transmission electron microscopy (TEM) for materials characterizations, arising concerns such as specimen drifts and unintentional Cu contamination are discussed. In particular, we analysed the thermal and mechanical characteristics of in situ heating holders to estimate thermal drift phenomena. From the experimental results, we suggest an empirical model to describe the thermal drift behavior so that we can design an effective plan for in situ heating experiment. Practical approaches to minimize several hindrances arisen from the experiment are proposed. We believe that our experimental recommendations will be useful for a microscopist fascinated with the powerful potential of in situ heating TEM.

Development of a drift-flux model based core thermal-hydraulics code for efficient high-fidelity multiphysics calculation

  • Lee, Jaejin;Facchini, Alberto;Joo, Han Gyu
    • Nuclear Engineering and Technology
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    • v.51 no.6
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    • pp.1487-1503
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    • 2019
  • The methods and performance of a pin-level nuclear reactor core thermal-hydraulics (T/H) code ESCOT employing the drift-flux model are presented. This code aims at providing an accurate yet fast core thermal-hydraulics solution capability to high-fidelity multiphysics core analysis systems targeting massively parallel computing platforms. The four equation drift-flux model is adopted for two-phase calculations, and numerical solutions are obtained by applying the Finite Volume Method (FVM) and the Semi-Implicit Method for Pressure-Linked Equation (SIMPLE)-like algorithm in a staggered grid system. Constitutive models involving turbulent mixing, pressure drop, and vapor generation are employed to simulate key phenomena in subchannel-scale analyses. ESCOT is parallelized by a domain decomposition scheme that involves both radial and axial decomposition to enable highly parallelized execution. The ESCOT solutions are validated through the applications to various experiments which include CNEN $4{\times}4$, Weiss et al. two assemblies, PNNL $2{\times}6$, RPI $2{\times}2$ air-water, and PSBT covering single/two-phase and unheated/heated conditions. The parameters of interest for validation include various flow characteristics such as turbulent mixing, spacer grid pressure drop, cross-flow, reverse flow, buoyancy effect, void drift, and bubble generation. For all the validation tests, ESCOT shows good agreements with measured data in the extent comparable to those of other subchannel-scale codes: COBRA-TF, MATRA and/or CUPID. The execution performance is examined with a mini-sized whole core consisting of 89 fuel assemblies and for an OPR1000 core. It turns out that it is about 1.5 times faster than a subchannel code based on the two-fluid three field model and the axial domain decomposition scheme works as well as the radial one yielding a steady-state solution for the OPR1000 core within 30 s with 104 processors.

Some Peculiarities of Photo-structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

  • Prikhodko, O.;Almasov, N.;Korobova, Natalya
    • Journal of information and communication convergence engineering
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    • v.9 no.5
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    • pp.587-590
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    • 2011
  • The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.