• Design & Manufacturing
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• 제14권4호
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• pp.71-77
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• 2020

Various manufacturing technologies, including over-molding and insert-injection molding, are used to produce hybrid plastics and metals. However, there are disadvantages to these technologies, as they require several steps in manufacturing and are limited to what can be reasonably achieved within the complexities of part geometry. This study aims to determine a practical approach for producing metal/plastic hybrid components by combining plastic injection molding and metal die casting to create a new hybrid metal/plastic molding process. The integrated metal/plastic hybrid injection molding process developed in this study uses the proven method of multi-component technology as a basis to combine plastic injection molding with metal die casting into one integrated process. In this study, the electrical conductivity and ampacity were verified to qualify the new process for the production of parts used in electronic devices. The electrical conductivity was measured, contacting both sides of the test sample with constant pressure, and the resistivity was measured using a micro ohmmeter. Also, the specific conductivity was subsequently calculated from the resistivity and contact surface of the conductor path. The ampacity defines the maximum amount of current a conductive path can carry before sustaining immediate or progressive deterioration. The manufactured hybrid multi-components were loaded with increasing currents, while the temperature was recorded with an infrared camera. To compare the measured infrared images, an electro-thermal simulation was conducted using commercial CAE software to predict the maximum temperature of the power loaded parts. Overall, during the injection molding process, it was demonstrated that multifunctional parts can be produced for electric and electronic applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 대한방사선치료학회지
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• 제27권2호
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• pp.97-106
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• 2015

목 적 : 고주파 온열치료 시 약물투여 및 혈액채취에 사용되는 케모포트로 인한 열적 변화를 알아보고자 한다. 대상 및 방법 : 전극 크기 20 cm인 고주파 온열치료기(EHY-2000, Oncotherm Kft, Hungary)를 이용하여 현재 본원에서 사용 중인 케모포트 중 재질이 플라스틱인 소재, 티타늄을 둘러싼 에폭시 소재와 티타늄 소재 케모포트를 자체 제작한 직경 20 cm, 높이 20 cm 원통형 한천(Agar)팬텀에 삽입하여 온도를 측정하였다. 온도측정기(TM-100, Oncotherm Kft, Hungary) 그리고 Sim4Life(Ver2.0, ZMT, Zurich, Switzerland) 프로그램을 사용하여 실제 측정된 온도변화와 비교 분석하였다. 측정위치는 전극 중심축 및 중심축 측면 1.5 cm지점에 각각 0 cm(표면), 0.5 cm, 1.8 cm, 2.8 cm 깊이별로 하였다. 측정조건은 온도 $24.5{\sim}25.5^{\circ}C$, 습도 30 ~ 32%, 출력 전력 100 W로 5분 간격으로 총 60분을 측정 하였다. 결 과 : 케모포트 미사용, 플라스틱, 에폭시 그리고 티타늄 케모포트를 사용한 경우의 최고온도는 전극 중심축 2.8 cm 깊이에서 측정값 $39.51^{\circ}C$, $39.11^{\circ}C$, $38.81^{\circ}C$, $40.64^{\circ}C$와 모의실험값 $42.20^{\circ}C$, $41.50^{\circ}C$, $40.70^{\circ}C$, $42.50^{\circ}C$이며, 전극 중심축 1.5 cm 측면 2.8 cm 깊이에서 측정값 $39.51^{\circ}C$, $39.32^{\circ}C$, $39.20^{\circ}C$, $39.46^{\circ}C$와 모의실험값 $42.00^{\circ}C$, $41.80^{\circ}C$, $41.20^{\circ}C$, $42.30^{\circ}C$이다. 고안 및 결론 : 고주파 전자기장에 의한 케모포트 주위의 열적 변화량은 부도체 물질인 플라스틱과 에폭시 소재에서 미사용의 경우보다 낮게 나타났으며, 도체 물질인 티타늄 케모포트에서는 약간의 차이를 보였다. 이는 케모포트내 금속 함유량 및 기하학적 구조에 의한 것과 이용 장비의 낮은 고주파 대역를 사용함에 있는 것으로 여겨진다. 즉 본 연구에 사용된 케모포트는 열 변화가 미미하여 장해를 고려하지 않아도 된다고 사료된다.