• Composites Research
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• v.26 no.2
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• pp.129-134
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• 2013

The strength of adhesive joints employed in composite structures under cryogenic environments, such as LNG tanks, is affected by thermal residual stress generated from the large temperature difference between the bonding process and the operating temperature. Aramid fibers are noted for their low coefficient of thermal expansion (CTE) and have been used to control the CTE of thermosetting resins. However, aramid composites exhibit poor adhesion between the fibers and the resin because the aramid fibers are chemically inert and contain insufficient functional groups. In this work, electrospun meta-aramid nanofiber-reinforced epoxy adhesive was fabricated to improve the interfacial bonding between the adhesive and the fibers under cryogenic temperatures. The CTE of the nanofiber-reinforced adhesives were measured, and the effect on the adhesion strength was investigated at single-lap joints under cryogenic temperatures. The fracture toughness of the adhesive joints was measured using a Double Cantilever Beam (DCB) test.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.63-69
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• 2019

Soldering technology has been used in electronic industry for a long time. However, due to solder fatigue characteristics, automotive electronics are searching the semi-permanent interconnection technology such as press-fit method. Press fit interconnection is a joining technology that mechanically inserts a press fit metal terminal into a through hole in a board, and induces a strong bonding by closely contacting the inner surface joining of the through hole by plastic deformation of press-fit terminal. In this paper, the bonding properties of press-fit interconnection are investigated with PCB hole size and surface finishes. In order to compare interconnection reliability between the press fit and soldering, the change in resistance of the press-fit and soldering joints was observed during thermal shock test. After thermal cycling, the failure modes are investigated to reveal the degradation mechanism both press-fit and soldering technology.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1000-1007
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• 2001

In an evacuated tube solar collector, the stable sealing of the heat pipe to the glass tube is important for the collector to use for a long period of time. The sealing of copper tube to the glass is quite difficult because of the large differences in the physical and chemical properties of the two materials. In this study, therefore, a proper copper oxide layer was induced to improve the chemical bonding of the two materials, and the oxidation state of copper and the interface between copper and glass were examined by XRD, SEM and EDS. Its bonding strength was also measured. Cu$_2$O was formed when the bare copper was heat-treated under 600$^{\circ}C$, while CuO oxide layer was formed above that temperature. The bonding state of CuO to the copper was very poor. The borate treatment of the copper, however, extend the stable forming of Cu$_2$O layer to 800$^{\circ}C$. Borosilicate glass tube was sealed to a copper tube by Housekeeper method only when the sealing part was covered with Cu$_2$O layer. The bonding strength at the interface was measured 354.4N, its thermal shock resistance was acceptable.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.10a
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• pp.139-143
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• 2001

In manufacturing process of semiconductor package, thermal stress owing to high temperature in moulding and bubbles generated in chip bonding process become main causes to producing void. Therefore, on this study we evaluated quantitatively void size by ultrasonic spectroscopy method which analyze the frequency of this received pulse using pulses with broad band frequency, and after destructive test we verified effectiveness of sizing void by ultrasonic spectroscopy as we find error degree between the real size of void and the sizing void by ultrasonic spectroscopy.

• Journal of the Korean Society for Precision Engineering
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• v.10 no.3
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• pp.182-190
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• 1993

In manufacturing process of semiconductor package, the thermal stress owing to high temperature in moulding and the bubbles generated in chip bonding process become main causes to produce void. On this study we evaluated quantitatively void size by use of ultrasonic spectroscopy method which analyze the reflective pulses with broad band frequency in frequency domain, and after destructive testing we verified effectiv- eness of sizing void by use of ultasonic spectroscopy.

• Proceedings of the Korean Geotechical Society Conference
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• 1998.12a
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• pp.123-132
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• 1998

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1999.10a
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• pp.437-443
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• 1999

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate subjected to uniform temperature change. The viscoelastic film has been assumed to be thermorheologically simple. The time-domain boundary element method(BEM) has been employed to investigate the behavior of interface stresses. The order of the free-edge singularity has been obtained numerically for a given viscoelastic model. It is shown that the free-edge stress intensity factor is relaxed with time, while the order of the singularity increases with time for the viscoelastic model considered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.270-275
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• 2017

Current progress in the development of semiconductor technology in applications involving high electron mobility transistors (HEMT) and power devices is hindered by the lack of adequate ways todissipate heat generated during device operation. Concurrently, electronic devices that use gallium nitride (GaN) substrates do not perform well, because of the poor heat dissipation of the substrate. Suggested alternatives for overcoming these limitations include integration of high thermal conductivity material like diamond near the active device areas. This study will address a critical development in the art of GaN on diamond (GOD) structure by designing for ideal heat dissipation, in order to create apathway with the least thermal resistance and to improve the overall ease of integrating diamond heat spreaders into future electronic devices. This research has been carried out by means of heat transfer simulation, which has been successfully demonstrated by a finite-element method.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.744-750
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• 1998

Unlike common device, MEMS(micro-electro-mechanical system) device consists of very small mechanical structures which determine the performance of the device. Because of its small mechanical structure inside. MEMS device is very sensitive to thermal stress caused by CTE(coefficient of thermal expansion) mismatch between its components. Therefore, its characteristics are affected by material properties. process temperature. and dimensions of each layer such as chip, adhesive and substrate. In this study. we investigated the change of the thermal stress in the chip attached to a substrate. With computer-aided finite element method (FEM), the computer simulation of the thermal stress was conducted on variables such as bonding material, process temperature, bonding layer thickness and die size. The commercial simulation program, ABAQUS ver5.6, was used. Subsequently 3-layer test samples were fabricated, and their degree of bending were measured by 3-D coordinate measuring machine. The experimental results were in good agreement with the simulation results. This study shows that the bonding layer could be the source of stress or act as the buffer layer for stress according to its elastic modulus and CTE. Solder adhesive layer was the source of stress due to its high elastic modulus, therefore high compressive stress was developed in the chip. And the maximum tensile stress was developed in the adhesive layer. On the other hand, polymer adhesive layer with low elastic modulus acted as buffer layer, and resulted in lower compressive stress. The maximum tensile stress was developed in the substrate.

• Journal of the Korea institute for structural maintenance and inspection
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• v.12 no.1
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• pp.91-100
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• 2008

Multi-stepwise Thermal Prestressing Method(TPSM) is a newly proposed prestressing method, which is combined the external prestressing method and the external bonding method. Multi-stepwise thermal prestressing force is induced by cooling process of cover-plate in the multi-stepwise temperature distribution after the cover-plate being bolted to the girder. In this study, the heating capacity test of the developed heating system for applying the multi-stepwise TPSM effectively and multi-stepwise TPSM inducing test of H-beam is performed. Also, a field test of the rhamen type temporary bridge is carried out to evaluate the effect and application of the multi-stepwise TPSM. Truck load was loaded and compared with the structure analysis results.