• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.29-34
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• 2017

A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.1
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• pp.69-76
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• 2019

Microheaters with different structures were fabricated and compared to find an optimal configuration enhancing the performances of $C_2H_2$ gas sensor. Three temperature sensors were integrated on the surface of the insulation layer over the microheater, and resistance changes were observed to check the generated heat from the microheater. A low operating voltage of 1mV was applied to the temperature sensor to minimize any influence of thermal heat from the resistance type temperature sensor, whereas high voltages in the range between 10 and 20V were applied to the microheater. A microheater structure generating maximum heat at low voltage was determined. The generated heat was verified by the temperature sensors on the top of the $Si_3N_4$ and infrared camera. A long term stability and accuracy of the microheater were observed. The developed microheater was applied to enhance the performances of $C_2H_2$ gas sensor and successfully confirmed that the developed microheater greatly contributes to the improvement of sensitivity and selectivity of gas sensor.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.456-460
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• 2021

In this study, a Non-Dispersive Infrared (NDIR) Carbon Dioxide (CO₂) sensor with an externally exposed optical cavity is proposed for improving sensitivity. NDIR CO₂ sensors with high performance must use a lamp-type infrared (IR) source with a strong IR intensity. However, a lamp-type IR source generates high thermal energy that induces thermal noise, interfering with the accuracy of the CO₂ concentration measure. To solve this problem, the optical cavity of the NDIR CO₂ sensor is exposed to quickly dissipate heat. As a result, the proposed NDIR CO₂ sensor has a shorter warm-up time and a higher sensitivity compared to the conventional NDIR CO₂ sensor.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1537-1540
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• 2003

MEMS technology with micro scale is complete system utilized as the sensor. micro electro device. The metallization of MEMS is very important to transfer the power operating the sensor and signal induced from sensor part. But in the MEMS structures local stress concentration and deformation is often happened by geometrical shape and different constraint on the metallization. Therefore. this paper studies the effect of supporting type and thickness ratio about thin film thickness of the substrate thickness for the residual stress variation caused by thermal load in the multi-layer thin film. Specimens were made from materials such as Al, Au and Cu and uniform thermal load was applied, repeatedly. The residual stress was measured by FEA and nano-indentation using AFM. Generally, the specimen made of Al induced the large residual stress and the 1st layer made of Al reduced the residual stress about half percent than 2nd layer. Specimen made of Cu and Au being the lower thermal expansion coefficient induce the minimum residual stress. Similarly the lowest indentation length was measured in the Au_Cu specimen by nano-indentation.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.1110-1119
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• 2006

If water flows through a narrow passage into a medium that keeps the equilibrium of temperature, it causes small temperature difference and makes a temperature anomaly. The seepage or leakage often observed at old dams is a representative example of bringing about a temperature anomaly. Therefore, temperature measurements have been regarded as one of excellent methods that can detect the situation of seepage or leakage. However, because existing temperature measurement methods are based on a single sensor, the application of the method to the whole structure is nearly not possible in technical and economical phases. This paper introduces a temperature monitoring system using a thermal sensor cable that is comprised of addressable thermal sensors connected in parallel at many positions within a single cable. Through various laboratory and field experiments, it has been proved that the temperature monitoring technique can give an useful information about permeability of a medium or connectivity of fractures which have been regarded as difficult problems.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.5
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• pp.532-538
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• 2004

MEMS technology applying to the sensors and micro-electro devices is complete system. These microsystems are made by variable processes. Especially, the mentallization process has very important functions to transfer the power operating the sensor and signal induced from sensor part. But in the structures of MEMS the local stress concentration and deformation are often yielded by an irregular geometrical shape and different constraint. Therefore, this paper studies the effect of supporting type and thickness ratio about thin film of the substrate on the residual stress variation when the thermal loads is applied to the multi-layer thin film fabricated by metallization process. Specimens were made from several materials such as Al, Au and Cu. Then, uniform thermal load was applied, repeatedly. The residual stress was measured by FE Analysis and nano-indentation method using AFM. Generally, the specimen made of Al induced the larger residual stress than that of made of other materials. Specimen made of Cu and Au having the low thermal expansion coefficient induces the minimum residual stress. Similarly, the lowest indentation length was measured by nano-indentation method in the Si/Au/Cu specimen. Particularly, clusters are created in the specimen made of Cu by thermal load and the indentation length became increasingly large by cluster formation.

• Proceedings of the Korean Geotechical Society Conference
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• 2004.03b
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• pp.509-516
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• 2004

The measurement of abnormal change of temperature(temperature anomaly) will help determine the safety of various engineering constructions, as the measurement in body often used to diagnose one's health. Temperature anomaly can be occurred in leakage or seepage of water flow in rocks, and in ground water table etc. Grouting materials injected in fractured rocks generate heat during hardening process. The degree of temperature change is associated directly with heat flow characteristics, that is, thermal conductivity, specific heat capacity. density of the surrounding rocks and can afford to assess the grouting efficiency. However, in practice, the use of traditional temperature measuring technique composed of only one single thermal sensor has been fundamentally limited to acquire thermal data sufficient to use for that, partly due to the time-consuming measuring work, partly due to the non-consecutive quality of data. Thus, in this paper, a new concept of temperature measuring technique, what we call, thermal line sensor technique is introduced. In this, the sensors with an accuracy of $0.02^{\circ}$ are inserted at regular intervals in one line cable and addressed by a control device, which enables to fundamentally enhance the capability of data acquisition in time and space. This new technology has been demonstrated on diverse field model experiments. The results were simply meant to be illustrative of a potential to be used for various kinds of temperature measurements encountered in grouting and leakage problems.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.825-828
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• 2007

This paper presents a thermally adaptive driving (TAD) technology for response time compensation of LCD with integrated sensor. The TAD is comprised of analog sensor signal conditioning and a digital feedback algorithm. Utilizing with a digital feedback system, TAD reduces response time of nearly 50% over the temperature range $0^{\circ}C-60^{\circ}C$.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1364-1369
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• 2004

New method for the design, fabrication, and calibration of micro-machined heat flux sensor has been developed. Two types of micro-machined heat flux sensor having different thicknesses of the thermal-resistance layer are fabricated using the MEMS technique. Photo-resist patterning using a chrome mask, bulk-etching and copper-nickel sputtering using a shadow mask are applied to make heat flux sensors, which are calibrated in the convection-type heat flux calibration facility. The sensitivity of the device varies with thermal-resistance layer, and hence can be used to measure the heat flux in heat-transfer phenomena.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.439-442
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• 2002

We present in this Paper a microwave Power sensor fabricated by a standard CMOS process and a bulk micromachining process. The sensor consists of a CPW transmission line, a resistor as a healer, and thermocouple arrays. An input microwave heater, the resistor so that the temperature rises proportionally to the microwave power and tile thermocouple arrays convert it to an electrical signal. The sensor uses air bridged 8round of CPW realized by wire bonding to reduce tile device size and cost and to improve the thermal impedance. Al/poly-Si junctions are used for the thermocouples. Poly-Si is used for tile resister and Aluminium is for transmission line. The resistor and hot junctions of the thermocouples are placed on a low stress silicon nitride diaphragm to minimize a thermal loss. The fabricated device operates properly from 1㎼ to 100㎽\ulcorner of input power. The sensitivity was measured to be ,3.2～4.7 V/W.