• 공업화학
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• 제2권4호
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• pp.348-355
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• 1991

Hexamethylcyclotrisiloxane($D_3$), tetramethylcyclotetrasiloxane(TMCTS)을 공중합 시켜 Si-H 결합을 함유한 polysiloxane 공중합체를 합성하고 allylamine과 반응시켜 amino 기를 도입시킨후 naphthoquinone-1,2-diazide-5-sulfonyl chloride 와 반응시켜 naphthoquinone-1,2-diazide-5-sulfonyl 기가 도입된 polysiloxane을 합성하였다. 생성 공중합체의 열적특성을 측정한 결과, 열분해온도는 $360{\sim}450^{\circ}C$ 정도였으며 또한 감광특성은 backbone 수지의 분자량이나 증감제의 종류에 따라 영향을 받았다. Sensitivity는 $50{\sim}120mJ/cm^2$였고 contrast(${\gamma}$)는 1.4~2.1였으며 backbone 수지의 분자량이 증가함에 따라 약간 감소하였다.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1089-1094
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• 2009

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as resistive gas sensors for ethanol ($C_2H_5OH$) detection. Sensor films were fabricated by air spray method for the multi-walled CNTs solution on glass substrates. Sensors were characterized by resistance measurements in the sensing system, in order to find the optimum detection properties for the ethanol gas molecular. The film that was sprayed with the MWCNT dispersion for 60 see, was 300 nm thick. And the electric resistivity is $2{\times}10^{-2}\;{\Omega\cdot}cm$. Also, the sensitivity and the linearity of MWVNT sensor for ethanol gas are 0.389 %/sec and 17.541 %/FS, respectively. The MWCNT film was excellent in the response for the ethanol gas molecules and its reaction speed was very fast, which could be using as ethanol gas sensor. The conductance of the fabricated sensors decreases when the sensors are exposed to ethanol gas.

• 센서학회지
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• 제17권3호
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• pp.178-182
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• 2008

Planar type micro catalytic combustible gas sensor was developed by using nano crystalline $SnO_2$ Pt thin film as micro heater was deposited by thermal evaporation method on the alumina substrate. The thickness of the Pt heater was around 160 nm. The sensor showed high reliability with prominent selectivity against various gases(Co, $C_3H_8,\;CH_4$) at low operating temperature($156^{\circ}C$). The sensor with nano crystalline $SnO_2$ showed higher sensitivity than that without nano crystalline $SnO_2$. This can be explained by more active adsorption and oxidation of hydrogen by nano crystalline $SnO_2$ particles. The present planar-type catalytic combustible hydrogen sensor with nano crystalline $SnO_2$ is a good candidate for detection of hydrogen leaks.

• Nuclear Engineering and Technology
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• 제19권4호
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• pp.249-265
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• 1987

고준위 방사성폐기물 처분장에 대한 확률론적 위험도 평가를 위해 지금까지 많은 방법들이 제안되어 왔다. 이 계는 많은 불확실성을 갖는 입력 변수들을 갖고 있어서 이 입력변수들에 대해 계산된 위험도 역시 많은 불착실성을 갖는다. 본 논문에서는 이러한 점들을 조직적으로 분석하기 위하여 여러가지 불확실도 및 민감도 분석 방법들이 개발되었고 고준위 폐기물 처분장의 위험도 평가에 적용되었다. 본 논문을 통해 개발된 통계 패키지 SPUSA는 통계적 열여유도 분석, 방사선원 불확실도 분석등 등의 분야에도 사용될 수 있다.

• 전자공학회논문지A
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• 제31A권5호
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• pp.113-120
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• 1994

Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

• 전자공학회논문지A
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• 제31A권9호
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집A
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• pp.764-769
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• 2001

Brake-induced vibrations of a vehicle such as brake judder are determined by the excitation of brake torque variations and by their transfer to the driver's contact points via suspension, body and steering system. The formation of brake torque variation is mainly determined by static and dynamic disk thickness variations. The vibration transfer from the excitation by brake torque variation to the perception by the driver depends on the kinematic and dynamic behaviour of the components in the transfer path. Optimization of the judder performance can be achieved either by minimizing the excitation or by reduction of the judder sensitivity of the vehicle. In this paper, the optimization process of a front rotor is suggested to reduce brake judder considering the cooling performance of the rotor, the judder sensitivity of the vehicle and durability of the rotor.

• 센서학회지
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• 제1권2호
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• pp.165-172
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• 1992

3가와 5가 이온의 첨가가 전기전도도 및 감응도에 어떤 영향을 미치는가를 확인하기 위하여, In와 Sb를 Tin Oxide에 공침법으로 첨가하였다. Sb는 5가 이온으로 cassiterite 구조에 들어가서 열에너지에 의하여 이들 이온을 여기시켜 전도대로 밀어올리리라고 여겨진다. In 이온은 결정격자 속에 $In^{3+}$로 들어가서 원자가대로 부터 전자를 받게 되고 그러므로써 1가나 2가가 되리라 생각한다. 그러나, 이러한 현상들이 $SnO_{2}$에 존재하는 전위장벽을 2종의 이온첨가에 의하여 일어나는 resistivity에 끼치는 영향과 비교해 볼 때 감응도에는 어떤 영향을 보이는지 고찰하였다.

• Nuclear Engineering and Technology
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• 제46권4호
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• pp.513-520
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• 2014

In this paper, three types of operational and industrial absorbers used at research reactors, including Ag-In-Cd alloy, $B_4C$, and Hf are selected for sensitivity analyses. Their integral effects on the main neutronic core parameters important to safety issues are investigated. These parameters are core excess reactivity, shutdown margin, total reactivity worth of control rods, thermal neutron flux, power density distribution, and Power Peaking Factor (PPF). The IAEA 10 MW benchmark core is selected as the case study to verify calculations. A two-dimensional, three-group diffusion model is selected for core calculations. The well-known WIMS-D4 and CITATION reactor codes are used to carry out these calculations. It is found that the largest shutdown margin is gained using the $B_4C$; also the lowest PPF is gained using the Ag-In-Cd alloy. The maximum point power densities belong to the inside fuel regions surrounding the central flux trap (irradiation position), surrounded by control fuel elements, and the peripheral fuel elements beside the graphite reflectors. The greatest and least fluctuation of the point power densities are gained by using $B_4C$ and Ag-In-Cd alloy, respectively.