• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 춘계학술대회 논문집
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• pp.337-340
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• 2009

In hot press forming process, the desired high strength can be obtained through quenching process after cold forming of product. The quenching process, however, accompanies undesired distortion due to the volume change during the phase transformation as well as by thermal contraction. In this study the numerical simulation with DEFORM3D-Microstructure is used to predict the deformed shape during the quenching for the quenching fixture design.

• 한국표면공학회지
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• 제57권3호
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• pp.155-164
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• 2024

Physical properties of carbon nanomaterials are dependent on their nanostructures and they are modified by diverse synthesis methods. Among them, thermal plasma method stands out for synthesizing carbon nanomaterials by controlling chemical and physical reactions through various design and operating conditions such as plasma torch type, plasma gas composition, power capacity, raw material injection rate, quenching rate, kinds of precursors, and so on. The method enables the production of carbon nanomaterials with various nanostructures and characteristics. The high-energy integration at high-temperature region thermal plasma to the precursor is possible to completely vaporize precursors, and the vaporized materials are rapidly condensed to the nanomaterials due to the rapid quenching rate by sharp temperature gradient. The synthesized nanomaterials are averagely in several nanometers to 100 nm scale. Especially, the thermal plasma was validated to synthesize low-dimensional carbon nanomaterials, carbon nanotubes and graphene, which hold immense promise for future applications.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 추계학술대회논문집
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• pp.68-71
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• 2003

Heat treatment is one of the critical manufacturing processes that determine the quality of a product. This paper presents experimental and analytical results for the quench of a ring gear in stagnant oil. The goal of this study is to develop heat transfer predicting model in an overall analysis of the quenching process. Thermal conductivities which are dependant on temperatures and convection coefficients which are obtained by inverse method are used to develop the accurate heat transfer model. The results of heat transfer model have a good agreement with experimental results.

• 소성∙가공
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• 제13권5호
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• pp.441-448
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• 2004

Heat treatment is one of the critical manufacturing processes that determine the quality of a product. This paper presents experimental and analytical results for the quench of a ring gear in stagnant oil. The goal of this study is to develop heat transfer predicting model in an overall analysis of the quenching process, Thermal conductivities which are dependant on temperatures and convection coefficients which are obtained by inverse method are used to develop the accurate heat transfer model. The results of heat transfer model have a good agreement with experimental results.

• Nuclear Engineering and Technology
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• 제43권3호
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• pp.257-270
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• 2011

A set of reflood tests has been performed using ATLAS, which is a thermal-hydraulic integral effect test facility for the pressurized water reactors of APR1400 and OPR1000. Several important phenomena were observed during the ATLAS LBLOCA reflood tests, including core quenching, down-comer boiling, ECC bypass, and steam binding. The present paper discusses those four topics based on the LB-CL-11 test, which is a best-estimate simulation of the LBLOCA reflood phase for APR1400 using ATLAS. Both homogeneous bottom quenching and inhomogeneous top quenching were observed for a uniform radial power profile during the LB-CL-11 test. From the observation of the down-comer boiling phenomena during the LB-CL-11 test, it was found that the measured void fraction in the lower down-comer region was relatively smaller than that estimated from the RELAP5 code, which predicted an unrealistically higher void generation and magnified the downcomer boiling effect for APR1400. The direct ECC bypass was the dominant ECC bypass mechanism throughout the test even though sweep-out occurred during the earlier period. The ECC bypass fractions were between 0.2 and 0.6 during the later test period. The steam binding phenomena was observed, and its effect on the collapsed water levels of the core and down-comer was discussed.

• 한국세라믹학회지
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• 제34권7호
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• pp.767-773
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• 1997

Thermal shock behavior of alumina ceramics were studied by quenching the heated alumina specimen into the water of various temperatures over 0~10$0^{\circ}C$. The critical thermal shock temperature difference ( Tc) of the specimen decreased almost linearly from 275$^{\circ}C$ to 20$0^{\circ}C$ with increase in the cooling water temperature over 0~6$0^{\circ}C$. It is probably due to the increase of the maximum cooling rate which is dependent of the convection heat transfer coefficient. The convection heat transfer coefficient is a function of the temperature of the cooling water. However, the critical thermal shock temperature difference( Tc) of the specimen increased at 25$0^{\circ}C$ over 80~10$0^{\circ}C$ due to the film boiling of the cooling water. The maximum cooling rate, which brings about the maximum thermal stress of the specimen in the cooling process, was observed to increase linearly with the increase in the quenching temperature difference of the specimen due to the linear relationship of the convection heat transfer coefficient with the water temperature over 0~6$0^{\circ}C$. The critical maximum cooling rate for thermal shock fracture was observed almost constant to be about 260$\pm$1$0^{\circ}C$/s for all water temperatures over 0~6$0^{\circ}C$. Therefore, thermal shock behavior of alumina ceramics is greatly influenced by the convection heat transfer coefficient of the cooling water.

• 대한기계학회논문집B
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• 제30권5호
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• pp.397-404
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• 2006

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine chemical quenching phenomenon which is caused by radical adsorption and recombination processes on the surface, thermally grown silicon oxide plates with well-defined defect density were prepared. ion implantation technique was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). It has been found that as the ion energy is increased, the number of structural defect is also increased and non-stoichiometric condition of $SiO_x({\le}2)$ is enhanced.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.443-449
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• 2018

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

• 한국재료학회지
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• 제30권9호
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• pp.474-479
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• 2020

The effect of precipitation and dissolution of Si on the thermal diffusivity in the Al-Si alloy system is reported in this study and solution heat treatment followed by aging treatment is carried out to determine the effects of heat treatment on the thermal characteristics. The solution treatment is performed at 535 ℃ for 4 and 10 h and then the specimens are cooled by rapid quenching. The samples are aged at 300 ℃ for 4 h to precipitate Si solute. The addition of 9 wt% silicon contents makes the thermal diffusivity decrease from 78 to 74 mm/s² in the cases of solid solution treated and quenched samples. After quenching and aging, the Si solute precipitates on the Al matrix and increases the thermal diffusivity compared with that after the quenched state. In particular, the increase of the thermal diffusivity is equal to 10 mm/s² without relation to the Si contents in the Al-Si alloy, which seems to corresponded to solute amount of Si 1 wt% in the Al matrix.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2005년도 제31회 KOSCO SYMPOSIUM 논문집
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• pp.328-336
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• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.