• Journal of Conservation Science
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• v.6 no.1 s.7
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• pp.15-30
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• 1997

The chamical and physical properties of the fragments of an ancient pottery such as earthenware, gliazed pottery and celadon excavated in Chonnam province has been investigated by X-ray diffraction inductively coupled plasma spectroscopy(ICP), thermal mechanical analysis(TMA). Glazed pottery fragments of Chonnam province are cotaining Fe2O3 $4\~7\%$ by the analyis of ICP, firing temperature range was presumed to $1100-1150^{\circ}C$ by TMA. Celadon fragments of Chonnam province are containing Fe2O3 $2\~3\%$ by the analyis of ICP, firing temperature range was presumed to $1140\~1200^{\circ}C$ by TMA. The charateristics in the trace element composition of an ancient pottery of Chonnam provinceis are similar, it is an reflection of similar geological charateristics. The charateristic elements of Chonnam provincical ancient pottery were Rb, Sr, V, Zr, Y, Nd, Sc, La, Ce, Nb, Sm, Eu, Dy and Yb of the analyzed 21 trace elements. By Fe2O3-Zn ditribution diagram, potteries excavated in Yong-am, celadons excavated in Haenam, Kangjin, Buan and glazed pottery excavated in Hae-nam are grouped into the same class.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.128-128
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• 2010

중적외선 영역은 장애물에 의해서 파장의 흡수가 거의 일어나지 않기 때문에 적외선 소자에서 널리 이용되고 있다. 현재 대부분의 중적외선 소자에는 HgCdTe (MCT)가 사용되고 있지만, 3성분계 화합물이 가지는 여러 문제를 가지고 있다. 반면에, 2성분계 화합물인 인듐안티모나이드 (InSb)는 중적외선 영역 ($3-5\;{\mu}m$) 파장 대에서 HgCdTe와 대등한 소자 특성을 나타냄과 동시에 낮은 기판 가격, 소자 제작의 용이성, 그리고 야전과 우주 공간에서 소자 동작의 안정성 때문에 HgCdTe를 대체할 물질로 주목을 받고 있다. InSb는 미국과 이스라엘과 같은 일부 선진국을 중심으로 연구가 되었지만, 국방 분야의 중요한 소자로 인식되었기 때문에 소자 제작에 관한 기술적인 내용은 국내에 많이 알려지지 않은 상태이다. 따라서 본 연구에서는 InSb 소자 제작의 기초연구로 절연막과 pn 접합 형성에 대한 연구를 수행하였다. 절연막의 특성을 알아보기 위해, InSb 기판위에 $SiO_2$와 $Si_3N_4$를 PECVD (Plasma Enhanced Chemical Vapor Deposition)로 증착을 하였다. 절연막의 계면 트랩 밀도는 77K에서 C-V (Capacitance-Voltage) 분석을 통하여 계산하였으며, Terman method 방법을 이용하였다.[1] $SiO_2$는 $120-200^{\circ}C$의 온도 영역에서 계면 트랩 밀도가 $4-5\;{\times}\;10^{11}cm^{-2}$범위를 가진 반면, $240^{\circ}C$의 경우 계면 트랩 밀도가 $21\;{\times}\;10^{11}cm^{-2}$로 크게 증가하였다. $Si_3N_4$는 $SiO_2$ 절연막에 비해서 3배 정도의 높은 계면 트랩 밀도 값을 나타내었으며. Remote PECVD 장비를 이용하여 $Si_3N_4$ 절연막에 관한 연구를 추가적으로 진행하여 $7-9\;{\times}\;10^{11}cm^{-2}$ 정도의 계면 트랩 밀도 값을 구할 수가 있었다. 따라서 InSb에 대한 절연막은 $200^{\circ}C$ 이하에서 증착된 $SiO_2$와 Remote PECVD로 증착 된 $Si_3N_4$가 적합하다고 할 수 있다. 절연막 연구와 더불어 InSb 소자의 pn 접합 연구를 진행하였다. n-InSb (100) 기판 ($n\;=\;0.2-0.85\;{\times}\;10^{15}cm^{-3}$ @77K)에 $Be^+$이온 주입하여 p층을 형성하여 제작 되었으며, 열처리 조건에 따른 소자의 특성을 관찰 하였다. $450^{\circ}C$에서 30초 동안 RTA (Rapid Thermal Annealing)공정을 진행한 샘플은 -0.1 V에서 $50\;{\mu}A$의 높은 암전류가 관찰되었으며, 열처리 조건을 60, 120, 180초로 변화하면서 소자의 특성 변화를 관찰하였다.

• Korean Journal of Food Science and Technology
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• v.48 no.5
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• pp.525-529
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• 2016

Twenty-nine pepper products commercially available in the market were collected and investigate for contamination levels. Pepper products purchased from traditional markets had a degree of contamination of $10^6-10^7CFU/g$ aerobic bacteria, $10^4-10^5CFU/g$ Bacillus sp., and less than $10^2CFU/g$ yeast and molds. Organic pepper showed a degree of contamination of $10^4$ aerobic bacteria, $10^2-10^3$ Bacillus sp., and less than $10^1$ yeast and molds. Intense pulsed light (IPL) treatment of 10 min (1,000 V, 5 pps and 4 cm sample-to-lamp distance) showed a bacterial death rate of 1.45-1.55 log for whole peppers, and of 0.8-0.85 log for black and white pepper powder. The sterilization rate using IPL was higher than that using other non-thermal sterilization methods, such as ozone treatment or low-pressure discharge plasma sterilization, indicating that the IPL sterilization method may find potential application in the industry. However, further studies may need to be conducted to enhance the effect of sterilization.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.443-450
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• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.684-689
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• 2012

Poly(acrylic acid) (PAA) microspheres is one of the widely-used polymeric materials for the bio-field application and the electric materials. For the synthesis of PAA microspheres, the polymerization technique using surfactants is applied. After the synthesis, the purification and separation processes are required for the removal of surfactant. When general organic solvents were used, many problems, such as huge amount of waste solvent, additional separation processes, and the possibility of residual media, were occurred. Thus, High-pressure Soxhlet extraction using liquid $CO_2$ was developed to solve these problems. In this study, High-pressure Soxhlet extraction of the synthesized PAA microspheres using liquid $CO_2$ was conducted for the removal of Monasil PCA which is used for the dispersion polymerization of acrylic acid in compressed liquid Dimethyl ether (DME). The morphology of the extracted PAA particles was checked by field emission scanning electron microscopy (FE-SEM) and the residual concentration of Monasil PCA was analyzed by inductively coupled plasma - Optical Emission Spectrometer (ICP-OES). For studying the effect of the solvent effect, Soxhlet extraction was conducted using n-hexane, liquid DME, and liquid $CO_2$. In case of n-hexane, some extracted PAA microspheres were produced. However, deformation was also occurred due to the high thermal energy of n-hexane vapor. Liquid DME could not remove Monasil PCA. When using liquid $CO_2$, the extracted PAA microspheres which were free for the residual solvent were produced without deformation. For finding the optimum operating condition, high-pressure Soxhlet extraction was conducted for 8 hours with changing the temperature of reboiler and condenser. When the extractor temperature is $19.6{\pm}0.2^{\circ}C$ and the pressure is $51.5{\pm}0.5$ bar, the best removal efficiency was obtained.

• Journal of Chest Surgery
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• v.38 no.1 s.246
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• pp.13-22
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• 2005

It has been known that pulsatile flow is physiologic and more favorable to tissue perfusion than nonpulsatile flow. The purpose of this study is to directly compare the effect of pulsatile versus nonpulsatile blood flow to renal tissue perfusion in extracorporeal circulation by using a tissue perfusion measurement system. Material and Method: Total cardiopulmonary bypass circuit was constructed to twelve Yorkshire swines, weighing 20$\~ $30 kg. Animals were randomly assigned to group 1 (n=6, non pulsatile centrifugal pump) or group 2 (n=6, pulsatile T-PLS pump). A probe of the tissue perfusion measurement system $(QFlow^{TM}-500)$ was inserted into the renal pa­renchymal tissue. Extracorporeal circulation was maintained for an hour at a pump flow of 2 L/min after aortic cross-clamping. Tissue perfusion flow of the kidney was measured at baseline (before bypass) and every 10 minutes after bypass. Serologic parameters were collected at baseline and 60 minutes after bypass. Result: Baseline parameters were not different between the groups. Renal tissue perfusion flow was substantially higher in the pulsatile group throughout the bypass (ranged 48.5$\~$ 64 in group 1 vs. 65.8$\~$88.3 mL/min/100 g in group 2, p=0.026$\~$ 0.45) The difference was significant at 30 minutes bypass $(47.5{\pm}18.3\;in\;group\;1\;vs.\;83.4{\pm}28.5$ mL/min/100 g in group 2, p=0.026). Serologic parameters including plasma free hemoglobin, blood urea nitrogen, and creatinine showed no differences between the groups at 60 minutes after bypass (p=NS). Conclusion: Pulsatile flow is more beneficial to tissue perfusion of the kidney in short-term extracorporeal circulation. Further study is suggested to observe the effects to other vital organs or long-term significance.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.