• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.12 no.12
• /
• pp.1073-1080
• /
• 2000

Thermal diode is a device which allows heat to be transferred in one direction by convection due to density difference of fluid ,and blocks heat flow in the opposite direction. It is simple in construction and low in cost. And so, it is used as heat collection system of solar energy. In order to acquire a basic design data, thermal diode heat collection system has been studied experimentally for flux Rayleigh numbers from $2\times10^8\;to\;8\times10^8$. The heat transfer rate of this system is shown 10~47% higher than that of other earlier research results. He correlation obtained in this study is Nu=0.0037(Ra^*)^{0.429}(d^*)^{0.05}\frac{(Lr)}{H}^{0.415}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.208-212
• /
• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.

• International Journal of Air-Conditioning and Refrigeration
• /
• v.9 no.4
• /
• pp.10-16
• /
• 2001

An experimental study for free convective heat transfer in a thermal diode type enclosure is presented. The thermal diode is a device which allows heat to be transferred in one direction by convection due to density difference of the fluid, and consists of a rectangular-paralle-logrammic enclosure with a guide vane. It is used as heat collection system of solar energy due to its simple construction and low cost. Experimental parameters were guide vane thickness, the inclination angles of the parallelogrammic enclosure, and the lengths of the rectangular enclosure part. The parameter range of the flux Rayleigh numbers was $2.4\times{10}^8$~$9.8\times{10}^8$. The heat transfer rate of this system was shown 10~47% higher than that of other earlier research results without the guide vane. The correlation for fixed $\phi=60^\circ$ was obtained, Nu=0.0037(Ra^*)^{0.429}(d^*)^ {0.050}(Lr/H)^{0.0415}$.

• Korean Journal of Optics and Photonics
• /
• v.32 no.5
• /
• pp.230-234
• /
• 2021

Relief of thermal stress has received great attention, to improve the beam quality and stability of high-power laser diodes. In this paper, we investigate a microtrench structure engraved around a laser-diode chip-on-submount (CoS) to relieve the thermal stress on a laser-diode bar (LD-bar), using the SolidWorks® software. First, we systematically analyze the thermal stress on the LD-bar CoS with a metal heat-sink holder, and then derive an optimal design for thermal stress relief according to the change in microtrench depth. The thermal stress of the front part of the LD-bar CoS, which is the main cause of the "smile effect", is reduced to about 1/5 of that without the microtrench structure, while maintaining the thermal resistance.

• Proceedings of the KIEE Conference
• /
• 2001.10a
• /
• pp.192-195
• /
• 2001

In this report, we firstly have investigated the electrical characteristics of silicon carbide (SiC) schottky barrier diode and compared the characteristics to those of conventional Si diode through simulation and experiment. Secondly we have investigated the influence of two kinds of diodes to the power conversion circuit of the systems. From the investigation results it is verified that SiC schottky barrier diode is more superior to Si diode in thermal and reverse recovery, characteristics, which are the important factors in the size reduction and higher reliability of the systems. Finally though the experiment applied to PFC(Power Factor Correction) circuits, we precisely verified excellency to thermal characteristic of SiC schottky barrier diode any other diode.

• Proceedings of the KSME Conference
• /
• 2004.11a
• /
• pp.1231-1235
• /
• 2004

The needs of micro scale thermal detecting technique are increasing in biology and chemical industry. For example, Thermal finger print, Micro PCR(polymer chain reaction), ${\mu}TAS$ and so on. To satisfy these needs, we developed a DTSA(Diode Temperature Sensor Array) for detecting and controlling the temperature on small surface. The DTSA is fabricated by using VLSI technique. It consists of 32 ${\times}$ 32 array of diodes (1,024 diodes) for temperature detection and 8 heaters for temperature control on a 8mm ${\times}$ 8mm surface area. The working principle of temperature detection is that the forward voltage drop across a silicon diode is approximately proportional to the inverse of the absolute temperature of diode. And eight heaters ($1K{\Omega}$) made of poly-silicon are added onto a silicon wafer and controlled individually to maintain a uniform temperature distribution across the DTSA. Flip chip packaging used for easy connection of the DTSA. The circuitry for scanning and controlling DTSA are also developed

• Journal of the Korean Solar Energy Society
• /
• v.35 no.4
• /
• pp.67-75
• /
• 2015

PV module is conventionally connected in series with some solar cell to adjust the output of module. Some bypass diodes in module are installed to prevent module from hot spot and mismatch power loss. However, bypass diode in module exposed outdoor is easily damaged by surge voltage. In this paper, we study the thermal and electrical characteristics change of module with damaged bypass diode to easily find module with damaged bypass diode in photovoltaic system consisting of many modules. Firstly, the temperature change of bypass diode is measured according to forward and reverse bias current flowing through bypass diode. The maximum surface temperature of damaged bypass diode applied reverse bias is higher than that of normal bypass diode despite flowing equal current. Also, the output change of module with and without damaged bypass diode is observed. The output of module with damaged bypass diode is proportionally reduced by the total number of connected solar cells per one bypass diode. Lastly, the distribution temperature of module with damaged bypass diode is confirmed by IR camera. Temperature of all solar cells connected with damaged bypass diode rises and even hot spot of some solar cells is observed. We confirm that damaged bypass diodes in module lead to power drop of module, temperature rise of module and temperature rise of bypass diode. Those results are used to find module with a damaged bypass diode in system.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1347-1348
• /
• 2008

The efficacy and its degradation of light emitting diode(LED) are related to its PN junction's temperature(Tj). Currently efficacy in certain temperature and thermo-resistant are defined for the depending. However, the definitions are quite inconvenient for lighting application. The paper focuses on the issue and presents a method to evaluate the thermal characteristics of LED efficay.

• Korean Journal of Optics and Photonics
• /
• v.17 no.5
• /
• pp.455-460
• /
• 2006

The output characteristics of a ceramic Nd:YAC laser pumped by a fiber-coupled laser diode was investigated. An efficiency and a slope efficiency of 33.8 % and 39.3 % respectively were obtained, under an output coupler reflectance of 90.4 %. The laser power has decreased suddenly due to the thermal tensing effect more than 6 W pumping powers.

• Solar Energy
• /
• v.17 no.2
• /
• pp.35-42
• /
• 1997

Thermal diode is a device which allows heat to be transferred in one direction by convection due to difference of density of fluid, and blocks heat flow in the opposite direction. Vertical plate for heat collection and radiation are of utility for design of thermal diode. It was considered the transient and steady state of air filled thermal diode with guide vane which combined rectangular and parallelogrammic shape enclosures. $Gr^*$ was kept constantly on $1.11{\times}10^{10}{\sim}1.4{\times}10^{10}$ and error range was ${\pm}3%$ during the experiment. Nu was examined when inclined angle are $15^{\cir\c}\;and\;45^{\circ}$ and, also the experiments was carried out with and without guide vane as well. Specially, Nu was linearly increased due to increase of $Gr^*$, and the effect of guide vane and dimensionless channel depth was sensitive. Developed state of temperature began at dimensionless time $0.5{\sim}0.6$ due to variation of inclined angle, which is characteristic of system.