• Journal of Power Electronics
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• v.14 no.2
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• pp.271-281
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• 2014

Fluctuating wind conditions necessitate the use of a variable speed wind turbine (VSWT) with a AC/DC/AC converter scheme in order to harvest the maximum power from the wind and to decouple the synchronous generator voltage and frequency from the grid voltage and frequency. In this paper, a combination of a three phase diode bridge rectifier (DBR) and a modified topology of the diode clamped multilevel inverter (DCMLI) has been considered as an AC/DC/AC converter. A control strategy has been proposed for the DCMLI to achieve the objective of grid interface of a wind power system together with local load compensation. A novel fixed frequency current control method is proposed for the DCMLI based on the level shifted multi carrier PWM for achieving the required control objectives with equal and uniform switching frequency operation for better control and thermal management with the modified DCMLI. The condition of the controller gain is derived to ensure the operation of the DCMLI at the fixed frequency of the carrier. The converter current injected into the distribution grid is controlled in accordance with the wind power availability. In addition, load compensation is performed as an added facility in order to free the source currents being fed from the grid of harmonic distortion, unbalance and a low power factor even though the load may be unbalanced, non-linear and of a poor power factor. The results are validated using PSCAD/EMTDC simulation studies.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.10-15
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• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• Design & Manufacturing
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• v.7 no.1
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• pp.60-63
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• 2013

Recently, Silicone that one of the thermo-sets is used to making optical products such as LED lenses because of excellent thermal properties. LED lenses are required to keep the precise dimensions, so they must be molded to have the minimum deformation. Thermo-sets have the expansion characteristic on the part of thermal property, it is important to optimize the cure condition so that the deformation of the part become minimum. In this study, to investigate the relationship between the shrinkage by the curing and expansion by the thermal properties of the resin, reactive injection experiment was performed by setting the variables such as mold setting temperature, cure time. As a result, it was confirmed that there was a interval while the thermal properties were transferred to more active during the cure process. It is expected to help in determining the reactive injection molding conditions of the thermo-set parts as well as LED lens in order to reduce the amount of deformation.

• Macromolecular Research
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• v.14 no.1
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• pp.38-44
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• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.186-186
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• 2010

The crack behavior in the ceramic Nd:YAG at a laser-diode end-pumped Nd:YAG ceramic laser was investigated. The fracture critical temperature difference of the ceramic Nd:YAG is about $355^{\circ}C$. The fracture of the 2 at% and the 4 at.% ceramic Nd:YAG occurred more than 14.9 W and 6.9 W pump powers, respectively, under lasing conditions.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.433-435
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• 1987

Thermal reoxidation was carried out to eliminate hole traps at the surface of Si wafer. As the result, the good surface state of wafer was obtained and hole traps were eliminate at the inversion layer. For the evaluation of reoxidation effects. MOS diode was fabricated and its C-Y curve was plotted.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.110-111
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• 2000

여기 파워는 고체 레이저 매질 내부에 열을 발생시킨다. 매질 내부에서 발생한 열은 매질 표면을 따라 냉각이 진행되어 매질 내부에서는 불균일한 온도분포가 발생하게 된다. 레이저 매질의 굴절율은 온도에 따라 변하기 때문에 열복굴절 현상과 열렌즈 현상이 일어나 레이저 출력의 손실, 빔질의 저하를 유발하고 열적 스트레스는 매질의 손상 및 모드 동기된 극초단 펄스가 넓어지는 등의 문제를 초래한다. 선형 편광 광선을 이용하는 고체 레이저에서 열복굴절에 의해 레이저 출력이 약 30 %까지 감소하므로 레이저 공진기를 구성하는데 있어서 정량적인 열영향의 해석이 필요하다. 열복굴절에 의해 발생한 손실량은 다음과 같이 표현할 수 있다. (중략)

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.401-404
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• 2008

In the present investigation, a high precision thermal imprint system for micro ceramic products was developed and the net-shape manufacturing of multi-layer ceramic reflector for LED (Light Emitting Diode) was conducted with a precision metal die. Workpiece used in the present investigation were the multi-layer laminated ceramic sheets with pre-punched holes. The cavity with arbitrary angle was formed on the circular and rectangular holes of the ceramic sheets. During the imprinting process, the ambient temperature of the imprint system was kept over the transition temperature of the ceramic sheet and then rapidly cooled. The results in this paper show that the present method can be successfully applied to the fabrication of very small size hole array for ceramic reflector in a one step operation.

• Journal of the Korean Applied Science and Technology
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• v.34 no.1
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• pp.101-107
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• 2017

Anthracene has been a motive molecule for the blue-emitting materials in OLED. Since the blue emission needs big band gap between HOMO and LUMO, the blue-emitting materials are rare. In this paper, some anthracene derivatives containing simple aryl groups are synthesized and characterized. Regardless of the substituents the absorption and the emission bands are similar to each other and similar to the derivatives with the bulky silyl groups. The thermal and the CIE tests imply that among the tested 9-(2-naphthyl)-10-phenylanthracene is most promising for the diode. The material for the emission layer has to be investigated, which is simple to be prepared as well as good in the electrical and the thermal properties.