• Journal of Information Display
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• v.10 no.2
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• pp.49-53
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• 2009

In this study, a very small LED packaging lead frame with a low thermal resistance was developed. The cost of the package process was reduced by the use of many small LED lamps, which increased the light emission efficiency. Compared to the large lead frame lamp, however, the optical property of the small LED packaging lead frame lamp was not sufficiently improved because its reflection structure was changed and its reflection area was reduced. The luminous efficiency of the LED lamp reaches 58 lm/W at the current density of 0.16 A/$cm^2$. Using the LED lamps, 46-inch LCD BLU was manufactured. The BLU-made LED lamps have a low power consumption of 146 W and have a slim (10-mm-thick) BLU, keeping good uniformity in terms of brightness, and maintaining good thermal properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.509-512
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• 2010

The thermal distribution of 2D and 3D p-n photovoltaic diode structures with and without surface texturing has been studied. By analysis of the numerical simulation results of the I-V characteristics and lattice temperature distributions the effect of different texturing structures on the characteristics of silicon p-n photovoltaic devices has been studied systematically. The efficiency of the device having surface texturing shows more than ~2% enhancement compared to the reference devices which did not have texturing. In addition, the effect of the density of the texturing groove has been studied and it has been confirmed that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.231-238
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• 2015

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.123-123
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• 2003

탄소나노튜브는 지금까지의 많은 연구를 통해 다양한 분야에 대한 응용 가능성이 확인되었으며, 그 중에서도 특히 탄소나노튜브를 이용한 전계방출표시소자(carbon nanotube field emission display, CNT-FED)는 상용화를 눈앞에 두고 있는 상황이다. 본 연구에서는 탄소나 노튜브를 합성할 수 있는 여러 가지 방법 중에서 열화학기상증착법(thermal chemical vapor deposition, thermal CVD)을 이용하여 유리기판 위에 탄소나노튜브를 합성하였다. Electron beam evaporation으로 유리기판 위에 전극층으로 Cr을 150nm를 증착하고 연속하여 촉매층인 Invar(Fe-53%Ni-6%Co 합금)를 10nm의 두께로 형성하였다. 사진식각으로 Cr층을 line 패턴한 후 Cr line 내의 Invar층을 line 및 dot 패턴하였다. 나노튜브 합성을 위해 480-58$0^{\circ}C$까지 진공분위기 또는 질소 분위기에서 20분간 승온한 후 CO(150sccm)와 H$_2$(1200sccm)를 주입하여 20분간 성장시키고 질소 분위기에서 냉각시켰다. 성장된 탄소나노튜브는 SEM, TEM, Raman spectroscopy 등을 통하여 구조 및 형상분석을 하였다. 진공승온의 경우 탄소불순물인 a-C이 많은 양 증착 되었으며 탄소나노튜브는 온도에 따라 1-5$\mu\textrm{m}$의 두께로 성장하였으나, 질소분위기 승온의 경우는 a-C이 거의 증착되지 않았으며 나노튜브의 두께가 10-20$\mu\textrm{m}$였다. 본 연구에서는 diode구조를 갖는 탄소나노튜브 에미터의 수명예측을 위해 여러 가지 가속측정조건에서 전계방출 특성을 연구하였다. Anode와 cathode 간의 간격을 400$\mu\textrm{m}$로 유지한 diode 구조에 대해 $10^{-6}$ torr 이하의 진공에서 전계방출을 측정하였다. 100 line의 에미터를 60Hz의 주파수에서 1/100 duty로 구동하였으며, duty비 증가에 따라 pulse의 on-time을 고정하고 frequency를 변화시켰다. dc까지 duty비가 증가됨에 따라 방출전류의 양이 선형적으로 증가하였다. 전압을 일정하게 고정시키고 각 duty비에서 시간에 따라 방출전류를 측정한 결과 duty비가 높을수록 방출전류가 시간에 따라 급격히 감소하였다. 각 duty비에서 방출전류의 양이 1/2로 감소하는 시점을 에미터의 수명으로 볼 때 duty비 대 에미터 수명관계를 구해 높은 duty비에서 전계방출을 시킴으로써 실제의 구동조건인 낮은 duty비에서의 수명을 단시간에 예측할 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.2
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• pp.80-83
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• 2016

In the present paper, garnet structured $Y_3Al_5O_{12}:Ce^{3+}$ (YAG : Ce) ceramic phosphor plate (CPP) for high power laser diode (LD) was prepared and optical properties were analyzed. We synthesized monodispersed spherical nano-sized YAG : Ce particles by liquid phase method, fabricated phosphor ceramic plate with the addition of $Al_2O_3$. $75{\mu}m$ and $100{\mu}m$ thick YAG : Ce CPPs were compared in terms of the factors of conversion efficacy, thermal quenching, luminance and correlated color temperature (CCT). In conclusion, conversion efficacy decreased by 25 % in both samples and $100{\mu}m$ thick sample provides better optical properties of thermal quenching, maximum light conversion efficacy and maximum luminance value.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.449-455
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• 1993

In order to investigate the improvements of relatively poor characteristics of short wave length AlGaAs/GaAs laser diodes which are useful as a light source for short distance communication systems, the low temperature $(<680^{\circ}C)$ grown AlGaAs/GaAs GRINSCH-QW laser diodes by molecular beam epitaxy have been studied by photoluminescence as a function of rapid thermal annealing (RTA) temperature. It is shown that guantum well photoluminescence intensity increased substantially by a factor of 10 after RAT at $950^{\circ}C$ for 10 sec. This is related to the reduction of non-radiative recombination in the guantum well region. The threshold current of annealed laser diode is reduced by a factor, of 4, confirming the improvement of laser diode quality by rapid thermal annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1379-1384
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• 2009

High power light emitting diode(LEDs), a strong candidate for the next generation general illumination applications are of interest. With major advantages of power saving, increased life expectancy and faster response time over traditional incandescent bulb, the LEDs are rapidly taking over many applications such as LCD backlighting, traffic light, automotive lighting, signage, etc. The increased electrical currents used to drive the LEDs have focused more attention on the thermal management because the efficiency and reliability of the solid-state lighting devices strongly depend on successful thermal management. There exist some problems that are caused by heat generation in the LED package, such as wire breakage, yellowing of epoxy resin, lifted chip caused by reflow of thermal paste chip attach and interfacial separation between LED package and silicon resin. The goal of this study is to analyze high power LED thermal properties of using pulsating heat pipe.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.13-19
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• 2012

Thermal performance of an impinging cooling module for 150 W class high power LEDs have been investigated numerically and experimentally. Parametric studies were performed to compare the effect of several design parameters such as nozzle number, nozzle spacing, coolant flow rate, and impinging distance. The experiments were also carried out in order to validate the numerical results and the comparison between the experimental and numerical results showed good agreement. It is found that the overall thermal resistance of impinging cooling module strongly depends on the nozzle number, nozzle spacing, flow rate, and impinging distance. This results showed the optimized operating condition when number of nozzles is 25, nozzles spacing is 4mm, flow rate is 2.70 lpm, distance between nozzles and impinging surface is 2 mm.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.140-151
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• 1996

In this paper, we analyze the variations of thermal characteristics of LD (laser diode) arrays packaged by a flip-chip bonding method. When we simulate the temperature distribution in LD arrays with a BEM (boundary element method) program coded in this paper, we find that thermal crosstalks in LD arrays packaged by the flip-chip bonding method increases by 250-340% compared to that in LD arrays packaged by previous methods. In the LD array module packaged by the flip-chip bonding technique without TEC (thermo-electric cooler), the important parameter is the absolute temperature of the active layer increased due cooler), the important parameter is the absolute temperature of th eactiv elayers of LD arrays to thermal crosstalk. And we find that the temperature of the active layers of LD arrays increases up to 125$^{\circ}C$ whenall four LDs, without a carefully designed heatsink, are turned on, assuming the power consumption of 100mW from each LD. In order to reduce thermal crosstalk we propose a heatsink sturcture which can decrease the temeprature at the active layer by 40%.