• Journal of Information Display
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• v.4 no.2
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.62-68
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• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.366-373
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• 2015

Sol-gel binder was prepared by hydrolysis and condensation reaction using boehmite sol and methyltrimethoxysilane as a function of aging-time. The coating slurry was composed of a plate-shape alumina in the sol-gel binder for the EPD process, in which particles dispersed in the slurry were deposited on the electrode under an electric field due to the surface charge. We studied the effects of three parameters: the content of boehmite, the aging time, and the applied voltage, on the physical, thermal, and electrical properties of the hybrid composite films by EPD. The amount of boehmite was 10 ~ 20 wt% and the aging time was 0.5 ~ 72, with a fixed amount of plate-shape alumina of 10 wt%. The condition of applied voltage was 5 ~ 30 V with a distance of 2 cm between the electrode during the EPD process. We confirmed that a structure of hybrid composite films of well-ordered plate alumina was deposited on the substrate when the film was prepared using a sol-gel binder composed of 15 wt% boehmite with 1 hr aging time and EPD at 10 V. The process shows a weight loss of 7% at $500^{\circ}C$ in TGA and a breakdown voltage of 8 kV at $87{\mu}m$.

• Journal of the Korean Society of Safety
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• v.31 no.3
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• pp.16-21
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• 2016

Carbon Fiber Reinforced Plastic(CFRP) composite with a higher specific strength and rigidity is more excellent than conventional metallic materials or other organic polymer of FRP. It has been widely used in vehicles, aerospaces and high technology industries which are associated with nuclear power fields. However, CFRP laminated composite has several disadvantages as like a delamination, matrix brittleness and anisotropic fibers that are the weak points of the crack initiation. In this present work, the reinforced silicon carbide(SiC) particles were added to the interlayer of CFRP laminates in order to mitigate the physical vulnerability affecting the cracking and breaking of the matrix in the CFRP laminated composite because of excellent specific strength and thermal shock resistance characteristics of SiC. The 1wt% of SiC particles were spread into the CFRP prepreg by using a spray coating method. After that, CFRP prepregs were laminated for the specimen. Also, the twill woven type CFRP prepreg was used because it has excellent workability. Thus the mechanical and fracture behaviors of the twill woven CFRP laminated composite reinforced with SiC particles were investigated with the acoustic emission(AE) method under a fracture test. The results show that the SiC particles enhance the mechanical and fracture characteristics of the twill CFRP laminate composite.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2496-2503
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• 2018

The short-term stability of high efficiency polymer : nonfullerene solar cells was investigated by employing a quick (ten cycles) current density-voltage (J-V) cycling method. Polymer : nonfullerene solar cells with initial power conversion efficiency (PCE) of >10% were fabricated using bulk heterojunction (BHJ) films of poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5,7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) and 3,9-bis(2-methylene-((3-(1,1-dicyanomethylene)-6/7-methyl)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene (IT-M). One set of the BHJ (PBDB-T : IT-M) films was thermally annealed at $160^{\circ}C$ for 30min, while another set was used without any thermal treatment after spin-coating. The quick J-V scan (cycling) measurement disclosed that the PCE decay was relatively slower for the annealed BHJ layers than the unannealed (as-cast) BHJ layers. As a result, after ten cycles, the annealed BHJ layers delivered higher PCE than the unannealed BHJ layers due to higher and more stable trend in fill factor. The present quick J-V cycling method is simple but expected to be useful for the prediction of short-term stability in organic solar cells.

• Textile Coloration and Finishing
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• v.31 no.3
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• pp.165-176
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• 2019

Polyurethane-ureas(PUUs) were prepared from 4,4'-methylenebis(cyclohexyl isocyanate) and various diols including isosorbide. Isosorbide is starch-derived monomer that exhibit a wide range of glass transition temperature and are therefore able to be used in many applications. PUU was synthesized by a pre-polymer polymerization using a catalyst. Successful synthesis of the PUU was characterized by fourier transform-infrared spectroscopy. Thermal properties were determined by differential scanning calorimetry, thermogravimetric analysis, and dynamic mechanical analysis. It was found that by tuning isosorbide content in the resin, their glass transition temperature(Tg) slightly decreased. Physical properties were also determined by tensile strength and X-ray diffraction. There is no significant differences between petroleum-derived diol and isosorbide in XRD analysis. Moreover, their physical and optical properties were determined. The result showed that the poly(tetramethylene ether glycol)/isosorbide-based PUU exhibited enhanced tensile strength, transmittance, transparency and biodegradability compared to the existing diols. After 11 weeks composting, the biodegradability of blends increased in ISB-PUU. The morphology of the fractured surface of blend films were investigated by scanning electron microscopy.

• Nuclear Engineering and Technology
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• v.53 no.7
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• pp.2364-2370
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• 2021

The ⁿMCP (Neutron sensitive microchannel plate) combined with advanced readout electronics is widely used in energy selective neutron imaging because of its good spatial and timing resolution. Neutron detection efficiency is a crucial parameter for the ⁿMCP. In this paper, a mathematical model based on the oblique cylindrical channel and elliptical pore was established to calculate the neutron absorption probability, the escape probability of charged particles and overall detection efficiency of ⁿMCP and analyze the effects of neutron incident position, pore diameter, wall thickness and bias angle. It was shown that when the doping concentration of the ⁿMCP was 10 mol%, the thickness of ⁿMCP was 0.6 mm, the detection efficiency could reach maximum value, about 24% for thermal neutrons if the pore diameter was 6 ㎛, the wall thickness was 2 ㎛ and the bias angle was 3 or 6°. The calculated results are of great significance for evaluating the detection efficiency of the ⁿMCP. In a subsequent companion paper, the mathematical model would be extended to the case of the spatial resolution and detection efficiency optimization of the coating ⁿMCP.