• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.293-296
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• 1997

The experimental system used for vapor deposition polymerization (VDP) from PMDA (Pyromellitic dianhydride) and DDE (4, 4-diaminodiphenyl ether) were changed to PI (polyimide) thin films by thermal curing. The curing temperatures were 20$0^{\circ}C$, 25$0^{\circ}C$, 30$0^{\circ}C$, 35$0^{\circ}C$. When test number was 40, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm, 4.55MV/cm according to curing temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.886-889
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• 2002

This paper describes the characteristic analyses and a new design of the bushing for the pole transformers. The mechanical breakdown of the upper part of the bushing was frequently occurred. This caused the leakage of mineral oil, resulted in the interruption of electric power. Therefore, the bushings were investigated by the material analytical method and Finite Element Method. The analyses were performed by the Induced Coupled Plasma(ICP), X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), and Dielectric Thermal Analyzer(DETA). Also, the Von-Mises stress of the top part of bushing was determined by using ANSYS program. The Von-Mises stress of the newly designed bushing was reduced about 50%. Therefore, if we apply the newly designed bushing, the number of mechanical breakdown may be decreased.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.359-363
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• 1989

Recently, it is reported that the behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration. Furthermore, when thin oxide films are applied in practical device, the presence of oxide defects will be a serious problem. In this paper, because TDDB is the useful method to measure the effective density of defects, we stressed MOS structure that is 150 A of thermally grown $SiO_2$as a function of electric field (9-19 MV/cm), temperature ($22^{\circ}C$ - $150^{\circ}C$) and current. By examing TDDB under positive voltage, long-term oxide breakdown reliabiliy is described. From these data, breakdown wearout limitation for the oxide films can be characterized.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.114-118
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• 1989

Due to the increased integration density of VLSI circuits a highly reliable thin oxide film is required to fabricate a small geometry MOS device. The behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration and also the practical use of MOS device under irradiation has cause the degration of thin oxide films. In this paper, in order to evaluate the reliability of thin oxides with no stress applied and stressed by the irradiation under low electric field, the tests of TDDB (Time-dependent-dielectric breakdown) are used. Failure times against electric field are examined and acceleration factor is obtained for each case. Based on the experimental data, breakdown wear out limitation for thin oxide films is characterised.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.201-207
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• 2010

In this study, we calculated arc discharges happened in high-voltage circuit breakers for understanding the complex physics and the probability of thermal breakdown. The four main parts of arc model for this virtual-reality are radiation, PTFE abaltion, Cu evaporation and turbulence. Among these important parts the turbulence model can be critical to the reliability of computation results during high-current period because the plasma flow is affected by high eat energy and mass momentum. Two kinds of turbulence model, zero-equation model and two-equation model, are applied for these calculations and are compared with the measured pressure data inside a chamber.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.490-495
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• 2015

This paper was proposed the theoretical research and optimal design 3,000 V IGBT for using electrical automotive, high speed train and first power conversion. To obtaining 3,000 V breakdown voltage, the design parameters was showed $160{\Omega}{\cdot}cm$ resistivity and $430{\mu}m$ drift length. And to maintain 5 V threshold voltage, we obtained $6.5{\times}10^{13}cm^{-2}$ p-base dose. We confirmed $24{\mu}m$ cell pitch for maintain optimal on state voltage drop and thermal characteristics. This 3,000 V IGBT was replaced to thyristor devices using first power conversion and high speed train, presently.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.143-146
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• 1994

In older to investigate the properties of electric conduction in low density polyethylene(LDPE) for power cable, the thickness of specimen was the 30, 100($\mu\textrm{m}$) of LDPE. The experimental condition for conductive properties was measured until the breakdown occurs at temperature ranges from 30 to 110[$^{\circ}C$] and in the electric field of 1 to 5 ${\times}$10$^2$[Mv/m]. As for increase of temperature, the current density of LDPE was increased with constant ratio in low field, but changes with exponential function in high field. The tunnel current of pre-breakdown region is shifted toward low field as much as thermal excitation energy.

• Journal of the Korean Society of Industry Convergence
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• v.4 no.3
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• pp.329-337
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• 2001

This simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy Transport Model(TCETM). The simulator has the ability to calculate not only stationary characteristics but also non - stationary characteristics of a MOSFET. It solves basic semiconductor devices equations including Possion equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method. The conventional semiconductor device simulation technique, based on the Drift-Diffusion Model (DDM), neglects the thermal and other energy-related properties of a miniaturized device. I, therefore, developed a simulator based on the Thermally Coupled Energy Transport Model (TCETM) which treats not only steady-state but also transient phenomena of such a small-size MOSFET. In particular, the present paper investigates the breakdown characteristics in transient conditions. As a result, we found that the breakdown voltage has been largely underestimated by the DDM in transient conditions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.105-112
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• 1993

Oxide and reoxidized-nitrided-oxide were formed by furnace oxidation and rapid thermal processing (RTP). MOS capacitor and n-MOSFET's with those films as gate insulators were fabricated. The electrical characteristics of insulators were evaluated by current-voltage, high-frequency capacitance-voltage (C-V), and time-dependent dielectrical breakdown (TDDB) measurements. The hot carrier effects of MOSFET's were also investigated. Time-dependent dielectrical breakdown (TDDB) characteristics show that the life time of reoxidized-nitrided-oxide films is about 3 times longer than that of oxides. Hot carrier effects reveal that the life time of MOSFET's with reoxidized-nitrided-oxides is about 3 times longer than that of MOSFET's with oxides. Therefore, it is found that the reliability of dielectric films estimated by the hot carrier effects of MOSFET's is consistent with that of dielectric films from TDDB method.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2077-2080
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• 2000

We studied about electrical, chemical and mechanical characteristics of XLPE by dicumyl peroxide(DCP) and trimethylolpropane triacrylate(TMPTA) content ratio. DCP content was changed from 1.0 to 2.5phr increasing 0.5phr. TMPTA content was changed 0.5 to 1.5phr increasing 0.5phr. Thermal analysis (DSC) was carried out in order to observe tendency of 79 according to DCP and TMPTA content. In experimental results, content DCP 2.0phr and TMPTA 1.0phr has highest breakdown strength. Content DCP 2.0phr and TMPTA 0.5phr has lowest dielectric constant. Tendency of Tg did not affected by DCP and TMPTA content. Breakdown strength and Specific inductive capacity was measured.