• Title/Summary/Keyword: Thermal Breakage

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Thermal Characteristics of Waste Organic Sludges Discharged from an Chemical Product Manufacturing Industry (화학제품제조업에서 배출되는 폐 유기성슬러지의 열적 특성)

  • Kim, Min-Choul;Lee, Gang-Woo;Lee, Man-Sig;Shon, Byung-Hyun
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.6
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    • pp.1745-1753
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    • 2008
  • We analyzed the physical and chemical properties such as proximate analysis, ultimate analysis, heating values, thermogravimetric analysis, and combustion test for the organic sludge discharged from chemical and petrochemical product manufacturing industries in the industrial complex. The average combustible and ash content of organic sludges from chemical and petrochemical product manufacturing industries were 17.42%, 7.45%, and 18.25%, 4.22%, respectively. The C, H, O, N, and S compositions for chemical and petrochemical product manufacturing industries were 33.06, 4.34, 24.81, 5.18, and 0.72%. And those compositions for petrochemical product manufacturing industries were 36.58, 4.74, 26.79, 5.09, and 0.49%, respectively. From the TGA test, the minimum temperature for combustion of the sludge discharged from B company was $700^{\circ}C$ for direct use for energy and 2 sludges(F and N companies) were about $600^{\circ}C$. According to the basic combustion test, high concentration of CO was formed because oxidation and pyrolysis reaction take place in the batch type reactor at the same time. From this phenomena we could obtain the significant data for the overheating and breakage of furnace.

Improving Lifetime Prediction Modeling for SiON Dielectric nMOSFETs with Time-Dependent Dielectric Breakdown Degradation (SiON 절연층 nMOSFET의 Time Dependent Dielectric Breakdown 열화 수명 예측 모델링 개선)

  • Yeohyeok Yun
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.4
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    • pp.173-179
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    • 2023
  • This paper analyzes the time-dependent dielectric breakdown(TDDB) degradation mechanism for each stress region of Peri devices manufactured by 4th generation VNAND process, and presents a complementary lifetime prediction model that improves speed and accuracy in a wider reliability evaluation region compared to the conventional model presented. SiON dielectric nMOSFETs were measured 10 times each under 5 constant voltage stress(CVS) conditions. The analysis of stress-induced leakage current(SILC) confirmed the significance of the field-based degradation mechanism in the low electric field region and the current-based degradation mechanism in the high field region. Time-to-failure(TF) was extracted from Weibull distribution to ascertain the lifetime prediction limitations of the conventional E-model and 1/E-model, and a parallel complementary model including both electric field and current based degradation mechanisms was proposed by extracting and combining the thermal bond breakage rate constant(k) of each model. Finally, when predicting the lifetime of the measured TDDB data, the proposed complementary model predicts lifetime faster and more accurately, even in the wider electric field region, compared to the conventional E-model and 1/E-model.