• Electrical & Electronic Materials
• /
• v.7 no.5
• /
• pp.383-388
• /
• 1994

Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

• Electrical & Electronic Materials
• /
• v.8 no.6
• /
• pp.759-767
• /
• 1995

This paper examines the electrical properties according to a curing time and a corona degradation in epoxy composites which are used for transformers. To consider these phenomena, the electrets were formed by appling high voltages to five kinds of specimens designed according to a constant mixing rate and then TSC(Thermally Stimulated Current) values at the temperature range of -160-200[>$^{\circ}C$] were measured from a series of experiments. The behaviour of carrier and its possible origins in epoxy composites were studied. Various effects of curing time and electric field on epoxy composites were also investigated.

• Journal of the Korean Vacuum Society
• /
• v.2 no.3
• /
• pp.299-303
• /
• 1993

Erbium metal을 불순물로서 2mol% 첨가한 TlGaS2:Er3+ 단결정을 수평전기로에서 합성한 ingot를 사용하여 수직 Bridgman 방법으로 성장시켰다. 성장된 결정은 층상으로 이루어진 monoclinic 구조였으며, 10K에서 간접전이형 및 직접전이형 energy band gap은 각각 2.55eV, 2.57eV이었고, Er3+ 이온에 의한 두 개의 불순물 광흡수 peak가 524.9nm와 656.4nm에서 관측되었다. Themally stimulated current(TSC)를 측정하여 0.21eV와 0.38eV의 donor 준위와 0.71eV의 accptor 준위를 구하였다. 10K에서 측정된 photoluminescence(PL) spectrum에서는 632nm와 759nm에서 D-A pair에 의한 broad한 peak와 552, 559, 666, 813, 816, 827nm에서 Er3+ 이온에 의한 sharp한 peak들이 나타났다.

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.796-798
• /
• 1988

Langmuir-Blodgett(LB) films of arachic acid and TCNQ(tetracyanoquinodimethane) were prepared in the sample of Al/LB film/Al type where Al are electrodes, and polarization in LB film and dipolar moment of molecules in the films were measured by themally stimulated current(TSC). It is ascertaind in our experiments that dipolar mament of $C_{12}$TCNQ molecule was about 13-15 debye and the moment was directed from the alkyle chain toward TCNQ. Generation of the open circuit voltage was investigated on the z-type and Hetero structure of LB films.