• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.419-420
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• 2008

A power amplifier(PA) has been designed for 900 MHz-band applications. The PA consists of a single-ended CMOS amplifier which has $0.18{\mu}m{\times}64{\times}6$ gate width. The PA has been designed using $0.18{\mu}m$ CMOS process. At 900 MHz, the PA exhibit an output power of 20.8 dBm and a power-added efficiency(PAE) of 58.4 % with 22.2 dB power gain.

• Journal of Mechanical Science and Technology
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• v.14 no.5
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• pp.477-482
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• 2000

This study discusses a non-contact optical technique (electronic speckle pattern interferometry) that is well suited for thermal deformation measurement without any surface preparation and compensating process. Fiber reinforced plastics ($[0]_{16},\;[0/90]_{8S}$) were analyzed by ESPI to determine their thermal expansion coefficients. The thermal expansion coefficient of the transverse direction of a uniaxial composite is evaluated as $48.78{\times}10^{-6}(1/^{\circ}C)$. Also, the thermal expansion coefficient of the cross-ply laminate $[0/90]_{8S}$ is numerically estimated as $3.23{\times}10^{-6}(1/^{\circ}C)$ that is compared with that measured by ESPI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.205-205
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• 2009

As a p-type semiconductor NiO is potential material which can be used in many application including QD-LED. NiO films were deposited on glass substrates using rf-sputtering method. The properties of resistivity, surface roughness, etc in the NiO films were investigated at different sputtering parameters. The resistivity of $l.88{\times}10^{-2}{\sim}3.71{\times}10^{-2}{\Omega}cm$ with sputtering power(80~200 watts) and change was very low. The sputtering pressure at 3~60 mTorr resulted in rather broad change ofresistivity of $0.58{\times}10^{-2}{\sim}4.67{\Omega}cm$. The oxygen content in sputtering gas was found to be very effective to control the resistivity from $2.01{\times}10^{-2}$ to $1.22{\times}10^2{\Omega}cm$ with 100~2.5% $O_2$ in Ar gas. In addition, the surface roughness showed the RMS values of 0.6~1.1 nm and the dependence on sputtering parameters was weak.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.308-311
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• 2013

The effect of an electric field on the ac electrical treeing in various epoxy/reactive diluent systems was studied in a needle-plate electrode geometry. Diglycidyl ether of bisphenol A (DGEBA) type epoxy was used as a base resin, and 1,4-butanediol diglycidyl ether (BDGE) or polyglycol (PG) as a reactive diluent was introduced to the DGEBA system, in order to decrease the viscosity of the DGEBA epoxy system. BDGE was acted as a chain extender, and PG acted as a flexibilizer, after the curing reaction. To measure the treeing initiation time and the propagation rate, three constant alternating currents (ac) of 10, 13 and 15 kV/4.2 mm (60 Hz) were applied to the specimen, in a needle-plate electrode arrangement, at $30^{\circ}C$ of insulating oil bath. When 10 kV/4.2 mm (60 Hz) was applied, the treeing initiation time and the propagation rate in the DGEBA system were 356 min and $1.10{\times}10^{-3}$ mm/min, respectively, those in the DGEBA/BDGE system were 150 min and $1.14{\times}10^{-3}$ mm/min, respectively. Those in the DGEBA/PG system were 469 min and $1.05{\times}10^{-3}$ mm/min, respectively. As 15 kV/4.2 mm (60 Hz) was applied, the propagation rate in the DGEBA system was $5.41{\times}10^{-3}$ mm/min, and that in the DGEBA/PG system was $1.42{\times}10^{-3}$ mm/min. These values meant that PG could be used as a reactive diluent in the DGEBA system, without the deterioration of the insulation breakdown property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.531-538
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• 2015

This study examined the size and shape of the nano-silver particle through the analysis of electrical resistance when synthesizing nano-sized silver by using the chemical liquid reduction. Changes in particle behaviors formed according to the changes in electronic characteristics by electric resistance in each time period in the beginning of reduction reaction in a course of synthesizing the nano-silver particle formation were studied. In addition, analysis was conducted on particle behaviors according to the changes in concentration of $AgNO_3$ and in temperature at the time of reduction and nucleation and growth course when synthesizing the particles based on the particle behaviors were also examined. As the concentration of $AgNO_3$ increased, the same amount of resistance of approximately $5{\Omega}$ was increased in terms of initial electronic resistance. Furthermore, according to the result of formation of nuclear growth graph and estimation of slope based on estimated resistance, slops of $6.25{\times}10^{-3}$, $2.89{\times}10^{-3}$, and $1.85{\times}10^{-3}$ were derived from the concentrations of 0.01 M, 0.05 M, and 0.1 M, respectively. As the concentration of $AgNO_3$ increased, the more it was dominantly influenced by the nuclear growth areas in the initial phase of reduction leading to increase the size and cohesion of particles. At the time of reduction of nano-silver particle, the increases of initial resistance were $4{\Omega}$, $4.2{\Omega}$, $5{\Omega}$, and $5.3{\Omega}$, respectively as the temperature increased. As the temperature was increased into $23^{\circ}C$, $40^{\circ}C$, $60^{\circ}C$, and $80^{\circ}C$, slopes were formed as $4.54{\times}10^{-3}$, $4.65{\times}10^{-3}$, $5.13{\times}10^{-3}$, and $5.42{\times}10^{-3}$ respectively. As the temperature increased, the particles became minute due to the increase of nuclear growth area in the particle in initial period of reduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.50-53
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• 1992

The GaP crystals are growth by Synthesis Solute Diffusion(SSD) method and its properties are investigated. Etch pits density along vertical direction of ingot is increased from 3.8${\times}$10$^4$cm$\^$-2/ of first freeze to 2.3${\times}$10$\^$5/cm$\^$-2/ of last freeze part. The carrier concentration and mobilities are measured to 197.49$\textrm{cm}^2$/V. sec and 6.75${\times}$10$\^$15/cm$\^$-3/ at room temperature. The temperature dependence of optical energy gap is empilically fitted to E$\_$g/(T)=2.3383-(6.082${\times}$10$\^$-4/T${\times}$/(373.096+T)[eV]. Photo-luminescence spectra measured at low temperature are consist with sharp line-spectra near band-gap energy and radiative recombination between shallow Si-donor to Zn-acceptor and its phonon reprica, and broad emission. The infrared absorption in GaP is cause to phonon coupling modes of TO, LO, LA, TA$_1$, TA$_2$and vibration modes of Ga$_2$O, Si-donor and Zn-acceptor, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.855-858
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• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.201-202
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• 2005

The electrical characteristics of high-voltage LDMOSFET (Lateral Double-diffused MOSFET) fabricated by a CMOS technology were investigated depending on the process and design parameters. The off-state breakdown voltages of n-channel LDMOSFETs were linearly increased with increasing to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times10^{13}/cm^2$ to $1.0\times10^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times, however, the on-resistance was also increased about 76%. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.533-534
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• 2006

In this paper we propose a new model of a mini-pump with peristaltic motion and present the results of the finite element analysis of an electromagnetic micro actuator. The mini-pump consists of three diaphrams made of PDMS, three permanent magnets in cylinders, printed copper coils on glass substrates, and input and output port. The size of the mini-pump is $14\;{\times}\;40\;{\times}\;5.4$ mm3 and the permanent magnet diameter 6.2 mm $\times$ thickness 2 mm. The electromagnetic force applied on the magnet was about 0.84 N when the current of coils was 1 A, then the maximum displacement of the PDMS diaphram was about 2mm.