• 한국재료학회지
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• 제23권2호
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• pp.116-122
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• 2013

For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, large U-groove, small V-groove, and small U-groove, were prepared by a wet etching process. Silicon substrates with V-grooves were fabricated by an anisotropic etching process using a KOH solution mixed with isopropyl alcohol (IPA), and the size of the V-grooves was controlled by varying the concentration of IPA. The isotropic etching process following anisotropic etching resulted in U-grooves and the isotropic etching time was determined to obtain U-grooves with an opening angle of approximately $60^{\circ}$. The results indicated that U-grooves had a larger diffuse reflectance than V-grooves and the reflectances of small grooves was slightly higher than those of large grooves depending on the size of the grooves. Then amorphous Si:H thin film solar cells were fabricated on textured substrates to investigate the light trapping effect of textures with different shapes and sizes. Among the textures fabricated in this work, the solar cells on the substrate with small U-grooves had the largest short circuit current, 19.20 mA/$cm^2$. External quantum efficiency data also demonstrated that the small, U-shape textures are more effective for light trapping than large, V-shape textures.

• 한국자기학회지
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• 제2권1호
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• pp.44-49
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• 1992

단롤법 급속응고기술을 이용하여 $Nd_{12}Fe_{80}B_{6}(Nb,\;M)$ (M=Ti/Cu/Ga) 리본을 제작하고 이의 자기특성 및 미세조작에 관한 연구를 하였다. X-선 회절 및 TEM을 이용한 미세조직 조사 결과, 리본의 이방화에 Ga이 효과적이며, 디스크표면속도 17.9 m/s로 제작한 $Nd_{12}Fe_{80}B_{6}(Nb,\;Ca)$ 리본은 약 30 nm의 미세한 결정립으로 구성되고 자유표면이 이방화된 조직으로 형성됨을 알았다. 이 리본을 분쇄하여 자장중에서 정렬시킨 분말의 잔류자속밀도는 0.87 T의 높은 값을 보였으며, 분쇄하기전 리본의 잔류자속밀도에 비하여 약 5% 정도 높았다. 이상의 결과로 부터 리본의 자유표면은 이방화가 되고 나머지 부분은 HIREM 특성을 나타내는 새로운 형태의 고특성 급속응고리본의 제조가 가능할 것으로 사료된다.

• Korean Chemical Engineering Research
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• 제53권3호
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• pp.401-406
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• 2015

게터는 반도체와 초소형 전자패키지 소자 내부의 수소와 수증기 같은 기체를 흡착하여 기기 작동 시 방해 기체를 제거하는 기능을 한다. 본 연구에서는 재료와 공정 측면에서 높은 가격 경쟁력을 갖는 게터로, 실리콘 기판에 올라간 다공성 알루미나 구조체를 제조하는 연구를 진행하였다. 기공의 크기가 조절된 양극산화 알루미나(AAO)는 높은 비표면적을 가지며 표면에 OH-기를 다수 포함하므로 높은 효율을 갖는 수분 흡착제로 사용되었다. 등온 수분 흡탈착 곡선으로 분석한 수분 흡착도는 상대습도 35%일 때 2.02%로 우수한 성능을 나타내었다. 즉, 저온에서 사용가능하며, 추가 열원이 필요하지 않아 박막구조의 소형화가 용이하여 내부 손상 및 오염을 방지할 수 있는 게터재를 합성하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.282-283
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• 2005

Ion beam assisted deposition(IBAD) technique was used to produce biaxially textured polycrystalline MgO thin films for high critical current YBCO coated conductor. Hastelloy tapes were continuous electropolished with very smooth surface for IBAD-MgO deposition, RMS roughness of Hastelloy tape values below 2 nm and local slope of less than $1^{\circ}$. After the polishing of the tape an amorphous $Y_2O_3$ and $Al_2O_3$ are deposited Biaxially textured MgO was deposited on amorphous layer bye-beam evaporation with a simultaneous bombardment of high energy ions. We had developed the RHEED to measure in-situ biaxial texture of film surface as thin as tens angstrom. And also ex-situ characterization of buffer layers was studied using XRD and SEM. The full-width at half maximum(FWHM) out of plane texture of IBAD-MgO template is $4^{\circ}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.90-93
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• 2004

In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

• 한국토양비료학회지
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• 제42권Spc호
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• pp.40-44
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• 2009

이 연구는 Rock-dust로 채워진 농업 용지(Technosol)의 환경에서 물이 보이는 침투성과 삼투성의 특정을 파악하고자 수행되었다. 이 실험은 A와 B 두 장소에서 이루어졌으며 피실험지의 토양층은 각각 4가지 층으로 분류되었다. 모든 토양층의 토성은 미사질 양토로 분석되었으며 장소 A의 가장 낮은 층에서만은 양질사토였다. 두 토양에서, 각 토양층에 대한 용적밀도는 $1.49g{\cdot}cm^{-3}$을 대체로 상회하였으며, 이는 통상적인 medium textured mineral soil의 $1.25g{\cdot}cm^{-3}$을 크게 웃도는 값이다. 경운 직후 측정된 장소 A의 표토는 이보다 낮았다. 두 토양 표면에서의 $P_2O_5$의 집적은 각각 1962 (A), 1613 (B)$mg{\cdot}kg^{-1}$이었다. 이러한 집적은 3.2~6.5번에 걸쳐서 $300{\sim}500mg{\cdot}kg^{-1}$만큼 작물 생장에 알맞은 규모로 이루어졌다. 두 토양 표변에서의 Infiltration rate는 3.54 (A), 2.85 (B)$cm{\cdot}hr^{-1}$이었으나 각 토양층에 대한 percolation rate는 0.3 이하 (A), 0.003 이하 (B)$cm{\cdot}hr^{-1}$였다. 이러한 결과들은 표토가 동의 작용을 받은 반면 심토는 암분의 농업용지 형성 과정에서 생겨난 구조적인 문제인 바위 부스러기의 응집과 농업기계에 대한 다짐현상으로 인한 것임을 의미한다고 여겨진다.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.71-75
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• 2002

GaAs polycrystalline thin films with good performance were prepared on conducting glass by hot wall epitaxy (HWE), which were used for solar cell. Electron probe micro-analyzer (EPMA) was applied for the composition, morphology of surface and cross-section of grown films, and X-ray diffraction (XRD) for their phase structure; Raman scattering spectum (RSS) and photoluminescence (PL) were used for evaluating their optical characteristics. The results show that, there is textured structure on the surface of grown GaAs polycrystalline films, which is greatly promised to be suitable for the candidate of solar cell with low cost and high efficiency. It is concluded that the source and substrate at temperature of 900 ~ 930 $\^{C}$ and 500 $\^{C}$ respectively would be beneficial for such films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

• 한국초전도ㆍ저온공학회논문지
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• 제5권3호
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• pp.11-14
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• 2003

The detailed conditions of dc-sputtering for depositions of yttria-stabilized ZrO$_2$ (YSZ) films were investigated, while the films were grown on the CeO$_2$ template layers on biaxially textured Ni-tapes. The window of oxygen pressures for proper growth of YSZ films, which was dependent on sputtering powers, was determined by sufficient oxidations of the YSZ films and the de-oxidation of the target surface, which was required for rapid sputtering. The window turned out to be fairly wide under certain values of argon pressure. When the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated YSZ films showed good texture qualities and surface morphologies.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.326-328
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• 1999

We investigated the effects of residual gas partial pressure on the property of a CeO$_2$ buffer layer on a textured Ni tape, where the buffer layer was deposited by e-beam evaporation. The oxygen partial pressure were varied from 10$^{-7}$ to 10$^{-4}$ Torr. we also changed the surface condition for the surface oxygenation. We'll describe the detail of the resultant textures of the buffer layers and effects of YBCO growth on them