• Polymer(Korea)
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• v.30 no.1
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• pp.28-34
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• 2006

A series of methoxypoly(ethylene glycol) $(MPEG)-poly(\varepsilon-co-L-lactide)$ (PCLA) diblock copolymers were synthesized by ring-opening polymerization of a mixture of $\varepsilon-caprolactone$ and L-lactide with different ratios in the presence of $Sn(Oct)_2$. The characterization of MPEG-PCLA diblock copolymers were examined by $^1H-NMR$, GPC, DSC, and XRD. Kinetic study on ring-opening polymerization of monomer mixtures was carried out in various conditions such as a variation with polymerization time, amount of catalyst, and temperature. The highest conversion obtained in 1.2 ratic of initiator venn catalyst at $110\;^{\circ}C$. The biodegradable characterization of MPEG-PCLA diblock copolymers in aqueous solution was carried out by using GPC for $1\~14$ weeks. The biodegradability of MPEG-PCLA diblock copolymers increased as the L-lactide content of diblock copolymers increased. In conclusion, we confirmed the dependence of polymerization rate according to various conditions. In addition, we can control the biodegradability of MPEC-PCLA diblock copolymers by changing the ratio of PCL and PLA block segment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.111-112
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• 2005

To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Environmental Biology
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• v.25 no.3
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• pp.273-278
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• 2007

The cell numbers of heterotrophic bacteria inhabiting the surface and bottom sea water harvested from the 5 stations in the marine ranching ground of Tongyeong coastal waters in $2003{\sim}2007$ were examined, and species composition of the heterotrophic bacterial population and dominant species were analyzed as well. Sea water samples collected in summer season contained much higher number of heterotrophic bacteria than those harvested in winter, spring and autumn seasons due to the higher sea water temperature. However the cell number of heterotrophic bacteria did not show a significant dependence on the location of the sampling stations. The cell number of heterotrophic bacteria in the surface sea water harvested in October 2003 and in September 2004 was not discernibly different from that in the bottom sea water and sometimes the former was even fewer than the latter because of the typhoon and localized torrential downpour. The number of heterotrophic bacteria decreased every year. The main bacterial species were Pseudomonas fluorescens TY1, Pseudomonas stutzeri TY2, Acinetobacter lwoffii TY3, Sphingomonas paucimobilis TY4, Burkholderia mallei TY5, Pasteurella haemolytica TY6, Pasteurella multocida TY7, Comamonas acidovorans TY8, Actinobacillus ureae TY9 and Chryseobacterium indologenes TY10. P. fluorescens TY1 and A. lwoffii TY3 were found to be the dominant species.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.236-245
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• 1993

Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.419-426
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• 1999

In this study, the reaction rate constant, activation energy, total crosslinking density, elastic constant, cure properties ($t_5,\;t_{90}$), modulus, and abrasion resistance of rubber compounds were investigated as a function of cure temperatures, cure systems and reinforcing filler loadings. Reaction rate constants showed strong dependence on thc carbon black loading, cure temperature and cure system, and increased sharply with increasing the reaction temperatures. The lowest activation energy was obtained in the efficient cure (EC) system which corresponds to the high level of sulfur to accelerator ratio, and the activation energy was decreased with decreasing the carbon black loadings. The change of carbon black loadings directly affects the modulus and abrasion resistance, but the change of cure system showed various effects on the rubber compounds. Increased carbon black loadings showed the high modulus, improved abrasion resistance and short scorch time but decrease in crosslinking density and elastic constant. Higher crosslinking density and elastic constant were shown in the EC cure system regardless of carbon black loadings, but scorch timc ($t_5$) was not affected by the change of the ratio of sulfur to accelerator. Rapid optimum cure time ($t_{90}$) were showen in the EC cure system. Also, the equivalent cure curve coefficient of rubber compound was 0.96 for conventional cure (CC) system, and 0.94 for semi-efficient cure (SEC) and EC system regardless carbon black loadings. As regarding the abrasion resistance, wear volume showed the logarithmic increase for the loaded weight.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.29 no.1
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• pp.73-83
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• 1997

Most of the materials used in various industrial fields and also in our daily life are multi-component materials or composite materials, and it is well known that there are many cases where adhesion between the constituents within the bonded systems plays an important role. There are various types of performance evaluation tests for the bonded materials, among which tests for evaluating the bond performance under various conditions may be regarded as the most interesting ones for those engaged in work related to adhesion. I have studied on the mechanism of adhesion form the rheological standpoint with my colleagues, including some students from Korea, and I am very happy to be able to have a talk on some of our research works. In Japan, the so-called "adhesives" are usually classified into two categories;adhesives and pressure sensitive adhesives (PSA). Adhesives are the materials which solidify after bonding and are after used as the structural adhesives because the adhesive strength is comparatively strong. On the other hand, the pressure sensitive adhesives never solidify and are used as PSA tapes, labels or decals. About the adhesives, we have examined the dependence of adhesive strength(shear, tensile, peel) upon both temperature and rate of deformation, and found out some empirical rules which are applicable to most of the adhesive systems. We have also developed a simplified theory of adhesion, which is deseribed in terms of mechanical equivalent mode1 and a few failure criteria. Although some of the common rules can be accounted for according to this theory, it must be pointed out that a fracture mechanical approach ms inevitable especially in the region where the meehanical relaxation time of the adhesive is extremely large [W. W. Lim and H. Mizumachi]. About the pressure sensitive adhesives, we have studied on the PSA performance (peel, tack, holding power) as a function of both the viscoelastic properties and surface chemical properties of the materials, and found out some rules, and again we have developed a theory which deseribes the mechanism. And in addition, we have studied on the miscibility between linear polymers and oligomers, because PSA is generally manufactured by blending gums and tackifier resins. Many phase diagrams have been found and some of them have been analyzed on thermodynamic basis, and it became evident that the miscibility is a very important factor in PSA [H. J. Kin and H. Mizumachi]. In this presentation, I want to emphasize the fact that the adhesion performance is closely related to the structure/property of the adhesives.adhesives.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.407-408
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• 2011

Natural boron consists of two stable isotopes 10B and 11B with natural abundance of 18.8 atom percent of 10B and 81.2 atom percent of 11B. The thermal neutron absorption cross-section for 10B and 11B are 3837 barn and 0.005 barn respectively. 10B enriched specific compounds are used for control rods and as a reactor coolant additives. In this work 2 methods for boron enrichment were analysed: 1) Gas irradiation in static conditions. Dissociation occurs due to multiphoton absorption by specific isotopes in appropriately tuned laser field. IR shifted laser pulses are usually used in combination with increasing the laser intensity also improves selectivity up to some degree. In order to prevent recombination of dissociated molecules BCl3 is mixed with H2S 2) SILARC method. Advantages of this method: a) Gas cooling is helpful to split and shrink boron isotopes absorption bands. In order to achieve better selectivity BCl3 gas has to be substantially rarefied (~0.01%-5%) in mixture with carrier gas. b) Laser intensity is lower than in the first method. Some preliminary calculations of dissociation and recombination with carrier gas molecules energetics for both methods will be demonstrated Boron separation in SILARC method can be represented as multistage process: 1) Mixture of BCl3 with carrier gas is putted in reservoir 2) Gas overcooling due to expansion through Laval nozzle 3) IR multiphoton absorption by gas irradiated by specifically tuned laser field with subsequent gradual gas condensation in outlet chamber It is planned to develop software which includes these stages. This software will rely on the following available software based on quantum molecular dynamics in external quantized field: 1) WavePacket: Each particle is treated semiclassicaly based on Wigner transform method 2) Turbomole: It is based on local density methods like density of functional methods (DFT) and its improvement- coupled clusters approach (CC) to take into account quantum correlation. These models will be used to extract information concerning kinetic coefficients, and their dependence on applied external field. Information on radiative corrections to equation of state induced by laser field which take into account possible phase transition (or crossover?) can be also revealed. This mixed phase equation of state with quantum corrections will be further used in hydrodynamical simulations. Moreover results of these hydrodynamical simulations can be compared with results of CFD calculations. The first reasonable question to ask before starting the CFD simulations is whether turbulent effects are significant or not, and how to model turbulence? The questions of laser beam parameters and outlet chamber geometry which are most optimal to make all gas volume irradiated is also discussed. Relationship between enrichment factor and stagnation pressure and temperature based on experimental data is also reported.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.