• 제목/요약/키워드: Temperature uniformity

검색결과 668건 처리시간 0.034초

Micro-scale Thermal Sensor Manufacturing and Verification for Measurement of Temperature on Wafer Surface

  • Kim, JunYoung;Jang, KyungMin;Joo, KangWo;Kim, KwangSun
    • 반도체디스플레이기술학회지
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    • 제12권4호
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    • pp.39-44
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    • 2013
  • In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

TFT LCD 제조용 대면적 Magnetron Sputtering 장치 설계와 Al 성장막 특성 조사 (Design of a Large Magnetron Sputtering System for TFT LCD and Investigation of Sputtered AI Film Properties)

  • 유운종
    • 한국진공학회지
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    • 제2권4호
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    • pp.480-485
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    • 1993
  • Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

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PECVD로 증착된 $SiO_2$의 non-uniformity 특성 연구 (The study on the $SiO_2$ film non-uniformity by Plasma Enhanced Chemical Vapor Deposition)

  • 함용현;권광호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.73-73
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    • 2008
  • In this work, the study on the $SiO_2$ film non-uniformity by PECVD (Plasma Enhanced Chemical Vapor Deposition) was performed. Plasma diagnostics was analyzed by a DLP(Double Langmuir Probe) and a probe-type QMS(Quadrupole Mass Spectrometer) in order to investigate the spatial distribution of the plasma species in the chamber. The relationship between the plasma species and the depositing rate of the films was examined. On the basis of this work, it was confirmed that O radical density mainly contributed to the increase in the depositing rate of the $SiO_2$ films and the electron temperature in the plasma had a main effect on the formation of the oxygen radicals.

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LSI급 소자 제작을 위한 3인치 GaAs MBE 에피택셜 기판의 균일도 특성 연구 (A Study on Characteristics of Si doped 3 inch GaAs Epitaxial Layer Grown by MBE for LSI Application)

  • 이재진;이해권;맹성재;김보우;박형무;박신종
    • 전자공학회논문지A
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    • 제31A권7호
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    • pp.76-84
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    • 1994
  • The characteristics of 3 inch wafer scale GaAs epitaxial wafer grown by molecular beam epitaxy for LSI process application were studied. The thickness and doping uniformity are characterized and discussed. The growth temperature and growth rate were $600^{\circ}C$ by pyrometer, and 1 $\mu$m/h, respectively. It was found that thickness and doping uniformity were 3.97% and 4.74% respectively across the full 3 inch diameter GaAs epitaxial layer. Also, ungated MESFETs have been fabricated and saturation current measurement showed 4.5% uniformity on 3 inch, epitaxial layer, but uniformity of threshold voltage increase up to 9.2% after recess process for MESFET device.

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초임계 CO2 접촉량이 염색 균염성에 미치는 영향에 대한 연구 (The Influence of the Contact Amount of Supercritical CO2 on Dyeing Uniformity)

  • 박신;최현석;김태영;송태현
    • 한국염색가공학회지
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    • 제31권1호
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    • pp.25-32
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    • 2019
  • The influence of the contact amount of carbon dioxide per unit mass of dyestuff(${\alpha}$) on dyeing uniformity in supercritical fluid dyeing is analyzed in this study. The experiments using a 5L class Pilot Scale dyeing machine is carried out for this study purpose. For a fixed temperature and pressure, the amount of sample and the dyeing leveling time were considered as process variables. The results show that the increase in the amount of the sample causes a higher color difference than the reference sample, and it also increases the amount of residual dye. On the other hand, the color difference tended to decrease with the increase in dyeing time. Based on these results, the correlation between ${\alpha}$ value and dyeing uniformity in supercritical fluid dyeing is obtained.

웨이퍼 프로버 척의 저온 온도균일도 향상에 관한 연구 (A Study of Improvement of Low Temperature Uniformity of Wafer Prober Chuck)

  • 주영철;신휘철;강명구
    • 한국산학기술학회논문지
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    • 제10권10호
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    • pp.2572-2576
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    • 2009
  • 반도체 양산공정에 사용되는 웨이퍼 프로버의 척은 고온이건 저온이건 항상 일정한 온도균일도가 요구된다. 저온으로 운전 시에 온도분포를 써모커플을 이용하여 측정한 결과 온도균일도를 향상할 필요가 있음을 발견하였다. FLUENT를 이용한 전산해석을 하여 온도분포를 해석하였으며, 이 결과를 이용하여 냉각수 회로 배치의 변경과 국부적인 회로 폭의 확대 등 개선안을 제시하였다. 제시된 개선안과 현재 척의 온도분포를 비교한 결과 온도균일도가 향상되었음을 확인하였다.

아파트의 전면발코니 개조여부에 따른 겨울철 실내환경 측정비교 (Indoor Environmental Condition by Existing Front Balcony in Apartment House during Winter)

  • 최윤정
    • 한국실내디자인학회:학술대회논문집
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    • 한국실내디자인학회 2005년도 춘계학술발표대회 논문집
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    • pp.267-270
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    • 2005
  • The purpose of this study was to make clear the indoor environmental efficiency of front balcony 'in apartment houses during winter. The field measurements of indoor environmental elements were carried out at an ordinary house with an existing front balcony and a house renovated the front balcony into the living room. The measurements in two-subject houses were taken on simultaneously the 20$^{th}$ ${\sim}$ 21$^{th}$ of January 2003. As results, the averages indoor temperature in the ordinary house and the renovated house were same as 23.6${\circ}$C, and the averages globe temperature in two houses were same as 23.7${\circ}$C. But, estimated heating time of the renovated house was longer than that of the ordinary house. The daily ranges of indoor temperature and globe temperature in the renovated house were wider than the ordinary house. The daily ranges of indoor temperature and globe temperature in the renovated house was longer than that of the ordinary house. The uniformity ratio range of daylight in the ordinary house were calculated at 1/3.4${\sim}$1/6.2, but those of the renovated house were 1/6${\sim}$1/16.2. Therefore. it was found that indoor temperature, globe temperature and uniformity ratio of daylight in the ordinary house maintained more constant than the renovated house by green house effect and earning effect of front balcony.

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Mixer design for improving the injection uniformity of the reduction agent in SCR system

  • Hwang, Woohyeon;Lee, Kyungok
    • 한국컴퓨터정보학회논문지
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    • 제22권1호
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    • pp.63-69
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    • 2017
  • In this paper, we propose a method to optimize the geometry and installation position of the mixer in the selective catalytic reduction (SCR) system by computational fluid dynamic(CFD). Using the commercial CFD software of CFD-ACE+, the flow dynamics of the flue gas was numerically analyzed for improving the injection uniformity of the reduction agent. Numerical analysis of the mixed gas heat flow into the upstream side of the primary SCR catalyst layer was performed when the denitrification facility was operated. The characteristics such as the flow rate, temperature, pressure loss and ammonia concentration of the mixed gas consisting of the flue gas and the ammonia reducing gas were examined at the upstream of the catalyst layer of SCR. The temperature difference on the surface of the catalyst layer is very small compared to the flow rate of the exhaust gas, and the temperature difference caused by the reducing gas hardly occurs because the flow rate of the reducing gas is very small. When the mixed gas is introduced into the SCR reactor, there is a slight tendency toward one wall. When the gas passes through the catalyst layer having a large pressure loss, the flow angle of the exhaust gas changes because the direction of the exhaust gas changes toward a smaller flow. Based on the uniformity of the flow rate of the mixed gas calculated at the SCR, it is judged that the position of the test port reflected in the design is proper.

매니폴드 크기에 따른 1 kWe급 내부 매니폴드형 고체산화물 연료전지 스택 유량 분배에 관한 수치 해석 (Numerical Analysis on the Flow Distribution in a 1 kWe SOFC Stack of Internal Manifolds According to the Variation of Manifold Sizes)

  • 김영진;윤호원;김현진;윤경식;유지행
    • 한국수소및신에너지학회논문집
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    • 제33권1호
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    • pp.47-54
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    • 2022
  • In this study, we performed numerical analysis for 1 kWe SOFC stack of internal manifold types according to the different manifold sizes to verify the influence of the flow uniformity into each cell. To simulate the flow phenomena in the stack, the continuity and momentum conservation equations including the standard k-𝜺 turbulent model for the steady-state conditions were applied. From the calculation results, we verified that the pressure drop from inlet pipes to outlet pipes decreased to a log scale as the manifold size increased in the internal manifold types. Also, we found that the flow uniformity increased on an exponential scale as the manifold size increased. In addition, the calculation results showed that the flow uniformity gradually improved as the fuel and oxygen utilization increased.

LTP 퍼니스의 내부 유동 및 온도 균일도 최적화를 위한 실천공학교육적 문제해결 (Problem Solving about Practical Engineering Education based on Analysis on Optimized Internal Flow of LTP Furnace and Uniformity of Temperature)

  • 김진우;윤기만;조은정
    • 실천공학교육논문지
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    • 제10권2호
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    • pp.125-129
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    • 2018
  • 이 논문은 LTP 퍼니스의 최적화 된 내부 유동과 온도의 균일성에 대한 수치 해석에 관한 것이다. 반도체 제조 공정에서 실리콘 웨이퍼를 어닐링하기 위한 기능을 수행한다. 특히 챔버 내부의 최고 온도를 약 $400^{\circ}C$의 고온으로 유지하여 웨이퍼를 보강한다. 공정이 고온에서 완료되면 열 교환기를 통해 온도를 낮추고 이를 수행하기 위한 작업이 반복된다. 이 논문에서 최종적인 목표는 LTPS 퍼니스의 유동 해석을 통해 챔버의 단열 공급과 배기 구조의 최적 설계를 도출하는 것과 교육과정 개발을 위한 사례 발굴에 있다.