• 제목/요약/키워드: Temperature of coefficient of resistance

검색결과 537건 처리시간 0.025초

측온저항체 온도센서용 백금박막의 형성에 관한 연구 (The study on formation of platinum thin films for RTD temperature sensor)

  • 정귀상;노상수
    • E2M - 전기 전자와 첨단 소재
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    • 제9권9호
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    • pp.911-917
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    • 1996
  • Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

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NiCr 박막저항의 전기적 특성 연구 (The study on electrical properties of the NiCr thin film resistor)

  • 류제천;김동진;김용일;강전홍;김한준;유광민
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.275-278
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    • 2000
  • We were fabricated of NiCr thin film resistors(TFR) on A1$_2$O$_3$(99.5%) substrates by dc magnetic sputtering system. The characteristics of electrical resistance (Sheet resistance & Temperature-Coefficient of the resistance-value:TCR) by annealing condition and reactive gas on the resistors were studied.

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열처리 조건에 따른 백금박막 측온저항체 온도센서의 특성에 관한 연구 (The Study on Characteristics of Platinum Thin Film RTD Temperature Sensors with Annealing Conditions)

  • 정귀상;노상수
    • 센서학회지
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    • 제6권2호
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    • pp.81-86
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    • 1997
  • DC 마그네트론 스퍼터링을 이용하여 측온저항체 온도센서용 백금박막을 $Al_{2}O_{3}$ 기판위에 증착시켰다. 열처리 온도, 시간이 증가할수록 박막의 비저항 및 면저항은 감소하였다. Lift-off 방법을 이용하여 $Al_{2}O_{3}$ 기판위에 백금 저항체를 만들었으며, 텅스텐 wire, 실버 에폭시 그리고 SOG를 이용하여 백금박막 측온저항체 온도센서를 제작하였다. $25{\sim}400^{\circ}C$의 온도범위에서 백금박막 측온저항체 온도센서의 저항온도계수와 저항 변화율을 조사한 결과, 열처리 온도, 시간 및 박막의 두께가 증가할수록 저항온도계수가 증가하였으며 측정 온도범위 내에서 저항값은 선형적인 변화를 보였다. 열처리 온도 $1000^{\circ}C$, 시간 240분 그리고 박막두께 $1{\mu}m$ 조건에서 백금의 벌크에 가까운 $3825ppm/^{\circ}C$의 저항온도계수값을 얻을 수 있었다.

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대용량 이차전지 관리 시스템용 전력형 션트저항의 열기전력 안정화 (Stabilization of Thermo Electromotive Force of Power Type Shunt Resistor for Mass Storage Secondary Battery Management System)

  • 김은민;이선우
    • 한국전기전자재료학회논문지
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    • 제30권6호
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    • pp.376-380
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    • 2017
  • In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (${\pm}1%$ of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at $60^{\circ}C$); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at $25^{\circ}C$). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.

초고주파용 박막저항의 특성에 미치는 RF 스파터링 조건의 영향 (Effect of RF Sputtering Conditions on Properties of Thin Film Resistor for Microwave Device)

  • 류승록;구본급;강병돈;류제천;김동진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.913-917
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    • 2003
  • In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

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Experimental studies on the material properties of high-strength bolt connection at elevated temperatures

  • Li, Guo-Qiang;Yin, Ying-Zhi;Li, Ming-Fei
    • Steel and Composite Structures
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    • 제2권4호
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    • pp.247-258
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    • 2002
  • The high-temperature material properties of steel are very important to the fire resistance analysis of high-strength bolt connections. This paper reports on the results of the experimental studies on the high-temperature properties of 20 MnTiB steel which is widely used in high-strength bolts, and the friction coefficient of 16Mn steel plates at elevated temperature which is a necessary parameter for bolted frictional connection analysis. The test data includes yield strength, limit strength, modulus of elasticity, elongation and expansion coefficient of 20MnTiB steel at elevated temperature, and the friction coefficients between two 16Mn steel plates under elevated temperatures and after cooling. Based on the data from the tests, the mathematical models for predicting the mechanical properties of 20MnTiB steel and friction coefficients of 16Mn steel plates have been established.

Investigation on the phase transition of $Ni_2$MnGa alloy by using impedance spectroscopy

  • Park, S.Y.;Cho, K.H.;Lee, Y.P.
    • Journal of Korean Vacuum Science & Technology
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    • 제7권1호
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    • pp.13-17
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    • 2003
  • The influence of structural transition on the resistance and impedance behavior of Ni$_2$MnGa alloy was investigated. The temperature-dependent resistance and impedance were measured in a temperature range of 4 - 350 K and 185 - 300 K, respectively. The dependence of temperature coefficient of resistivity on temperature shows a kink at 220 K, which is related to the structural transition. The change in dominant scattering mechanism results in the observed kink. Significant increases were also observed around the transition temperature for both real and imaginary parts of impedance. It is thought that this phenomenon originates from disappearance of the martensite twin boundaries during the structural transformation.

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유한요소법에 의한 저항 점용접부의 역학적 특성에 관한 연구 (A Study on the Mechanical Behavior of Resistance Spot Welding by Finite Element Method)

  • 방한서;주성민;방희선;차용훈;최병기
    • Journal of Welding and Joining
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    • 제17권5호
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    • pp.77-82
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    • 1999
  • Resistance spot welding process is completed in very short time and there are many factors affecting on the generation of heat. It is difficult to control these experimental factors and monitor distribution of the temperature and stresses in the experimental analysis case. and too much time and expense are required for the experimental trials to fine proper welding condition. So numerical analyses have been attempted steadily, but most numerical analyses on the resistance spot welding are mainly focused on thermal behavior. Therefore, in this paper, the numerical analysis of mechanical behavior as well as heat conduction is carried out for the spot welding process. For this numerical analysis, axial symmetric computer program for the spot welding analysis by F.E.M. has been developed considering heat conduction and thermal elastic-plastic theory. Material properties depending on temperature such as density, heat conductivity, heat expansion coefficient, specific heat, yield stress, elastic modulus, and specific resistance are considered. Using the results of temperature distribution obtained from heat conduction analysis, the thermal elastic-plastic analysis is carried out to clarify mechanical behavior of spot welded specimen. In order to evaluate the effect of residual stresses, numerical analyses are carried out under tension-shear load in two cases respectively; one with residual stress, the other without residual stresses.

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다결정 3C-SiC 멤브레인 위에 균일한 온도분포를 갖는 마이크로 히터의 제작과 그 특성 (Fabrication of micro heaters with uniform-temperature area on poly 3C-SiC membrane and its characteristics)

  • 정귀상;정재민
    • 센서학회지
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    • 제18권5호
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    • pp.349-352
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    • 2009
  • This paper describes the fabrication and characteristics of micro heaters built on AlN($0.1{\mu}m$)/3C-SiC($1{\mu}m$) suspended membranes by surface micromachining technology. In this work, 3C-SiC and AlN films are used for high temperature environments. Pt thin film was used as micro heaters and temperature sensor materials. The resistance of temperature sensor and the power consumption of micro heaters were measured and calculated. The heater is designed for operating temperature up to about $800^{\circ}C$ and can be operated at about $500^{\circ}C$ with a power of 312 mW. The thermal coefficient of the resistance(TCR) of fabricated Pt resistance of temperature detector(RTD)'s is 3174.64 ppm/$^{\circ}C$. A thermal distribution measured by IR thermovision is uniform on the membrane surface.

$BaTiO_3$계 박막형 열전센서소자 개발 (Development of Thermal Sensor Devices in the $BaTiO_3$ Systems)

  • 송민종
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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    • pp.100-104
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    • 2003
  • $BaTiO_3$ ceramic thin films were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

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