• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권9호
• /
• pp.510-515
• /
• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of Al_2O_3+Y_2O_34. The result of phase analysis of composites by XRD revealed $\alpha-SIC(6H)\;TiB_2,\; and YAG(Al5Y3O12) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_34 contents because YAG of reaction between $Al_2O_3\; and\; Y_2O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. Owing to crack deflection crack bridging phase transition and TAG of fracture toughness mechanism the fracture toughness showed 7.1MPa.m1/2 for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $6.0\times10-4\Omega.cm\; and\; 3.1\times10-3/^{\circ}C4 respectively for composite added with 12wt% \Omega additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}C$.

• Composites Research
• /
• 제36권5호
• /
• pp.342-348
• /
• 2023

최근 웨어러블 소자를 이용한 신체와 주변 온도의 실시간 모니터링에 대한 수요가 급격히 증가하고 있다. 그래핀 기반 써미스터가 고성능 유연 온도 센서로 개발되어 왔다. 본 연구에서는 단일층 그래핀의 온도 측정 성능을 개선하기 위하여 표면에 polyethylenimine(PEI)를 코팅하여 저항 온도 계수(TCR)를 조절하였다. 화학기상증착법(CVD)에 의해 합성한 단일층 그래핀은 습식 전사 공정을 통해 원하는 기판에 전사되었다. PEI에 의한 계면 도핑을 유도하기 위하여, 소수성의 그래핀 표면을 산소 플라즈마 처리를 통해 결함을 최소화하면서 친수성으로 제어하였다. PEI 도핑 효과를 전계효과트랜지스터(FET)를 이용하여 확인하였다. PEI 도핑에 의해서 CVD 그래핀의 TCR 값이 30~50℃의 온도 범위에서 -0.49(±0.03)%/K로 향상된 것을 확인하였다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
• /
• pp.131-131
• /
• 2003

Surface micromachined uncooled IR detector with the optimized VOx bolometric layer was fabricated based on sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$. In order to improve the detectivity of the IR detector, we optimized a few factors in the viewpoint of bolometric material. Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having high temperature coefficient of resistance and low resistance because of process limits in microbolometer fabrication. In order to increase the responsivity and decrease noise, we increase TCR of bolometric material and decrease room temperature resistance based on the sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$ by conventional sputter. By oxygen diffusion through low temperature annealing of V$_2$O$_{5}$V/V$_2$O$_{5}$ in oxygen ambient, various mixed phase vanadium oxide was formed and we obtained TCR in range of-1.2 ~-2.6%/$^{\circ}C$ at room temperature resistance of 5~100k$\Omega$.mega$.

• 한국전기전자재료학회논문지
• /
• 제21권3호
• /
• pp.217-221
• /
• 2008

In this study, We have been investigated the effect of calcination temperature and high-energy ball-milling of powder influences the $BaTiO_3$-based PTCR(Positive Temperature coefficient Resistance) characteristics and microstructure. The mixed powder was obtained from $BaCO_3$, $TiO_2$, $CeO_2$ ball-milled in attrition mill. The mixed powder was calcine from 1000 $^{\circ}C$ to 1200 $^{\circ}C$ in air and then it was sintered in reduction- re-oxidation atmosphere. As a result, The room-temperature electrical resistivity decreased and increased with increasing calcination temperature. specially, Attrition milled powder could have low room-temperature resistivity and high PTC jump order at 1100 $^{\circ}C$. attrition milling had lower room-temperature resistivity than ball milling. Particle size decreased by Attrition milling of powder influences in calcination temperature and room-temperature resistivity.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권9호
• /
• pp.516-522
• /
• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
• /
• pp.15-18
• /
• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• Corrosion Science and Technology
• /
• 제12권5호
• /
• pp.220-226
• /
• 2013

The uncertainty in statistical noise resistance measurement was evaluated for a type 316 stainless steel in NaCl solutions at room temperature. Sensitivity coefficients were determined for measurands or variables such as NaCl concentration, pH, solution temperature, surface roughness, inert gas flow rate and bias potential amplitude. The coefficients were larger for the variables such as NaCl concentration, pH, inert gas flow rate and solution temperature, and they were the major factors increasing the combined standard uncertainty of noise resistance. However, the contribution to the uncertainty in noise resistance measurement from the above variables was remarkably low compared to that from repeated measurements of noise resistance, and thus, it is difficult to lower the uncertainty in noise resistance measurement significantly by lowering the uncertainties related with NaCl concentration, pH, inert gas flow rate and solution temperature. In addition, the uncertainty in noise resistance measurement was high amounting to 17.3 % of the mean, indicating that the reliability in measurement of noise resistance is low.

• 센서학회지
• /
• 제19권1호
• /
• pp.31-35
• /
• 2010

High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under $1{\times}1mm^2$ diaphragm and Si membrane thickness of $20{\mu}m$. The pressure sensitivity of implemented pressure sensors was 0.1 mV/$V{\cdot}bar$. The nonlinearity and the hysteresis of sensors were ${\pm}0.44%{\cdot}FS$ and $0.61%{\cdot}FS$. In the temperature range of $25^{\circ}C{\sim}400^{\circ}C$ with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperature coefficient of gauge factor) of the sensor were -1867 ppm/$^{\circ}C$, -792 ppm/$^{\circ}C$, and -1042 ppm/$^{\circ}C$, respectively.

• 전자공학회논문지D
• /
• 제35D권7호
• /
• pp.56-62
• /
• 1998

Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
• /
• pp.66-70
• /
• 2003

This dissertation is about the development of $BaTiO_{3}$-type PTC(Positive Temperature Coefficient) thermistor by composition method. PTC samples were fabricated after setting the experimental composition equation as $(Ba_{0.95-x}Sr_{0.05}Ca_x)TiO_3\;-\;0.01TiO_2\;-\;0.01SiO_2\;-\;aMnCO_3\;-\;0.2Nb_{2}O_{5}$ and their testing results were analyzed. a PTC thermistor, having the characteristics of relatively low resistance at room temperature and c and a good temperature coefficient, has been developed.