• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.57-62
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• 2008

From the progressing results, it was found that thin film using 52 wt% Ni - 38 wt% Cr - 3 wt% Al - 4 wt% Mn - 3 wt% Si target has good characteristics for low TCR (temperature coefficients of resistance) and high resistivity. The optimum sputtering condition was DC 250 W, 5 mtorr, and 50 sccm and the proper annealing condition was $350^{\circ}C$/3.5 hr in air atmosphere. At these fabricated conditions, thin film resistors with TCR values of less than ${\pm}10ppm/^{\circ}C$ were obtained. The TCR of the packaged-samples made at proper fabrication conditions was $-3{\sim}15ppm/^{\circ}C$ after the thermal cycling and $-20{\sim}180ppm/^{\circ}C$ after PCT (pressure cooker test), we could confirm reliability for the thin film resistor and find the need for enduring research about packaging method.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.234-237
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• 2002

The cobalt silicide was formed OH POly-Si/SiO$_2$/Si Substrates by the E-beam evaporation of Co metal and rapid thermal annealing method for the application of heating actuators. The most stable CoSi$_2$crystal was obtained at temperature of above $700^{\circ}C$ for 20 sec in $N_2$ambient. From the SEM observation, the thickness and diameter of the heating elements were about $1{\mu}{\textrm}{m}$ and $50{\mu}{\textrm}{m}$, respectively. Temperature resistance coefficient of heating elements was found to be about 0.0014($1/^{\circ}C$) with $30~35\Omega$ of resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.365-369
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• 2016

In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.178-183
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• 2015

Optical, electrical and structural properties of VOx/ZnO/VOx thin film are studied. The VOx/ZnO/VOx multilayer is deposited by using a radio frequency (RF) sputtering system. The VOx/ZnO/VOx thin film shows the high temperature coefficient of resistance (TCR) of $-3.12%/^{\circ}C$ and the low sheet resistance of about 80 $k{\Omega}/sq$ at room temperature. The responsivity and detectivity of the bolometer are measured as a function of modulation frequency.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.337-344
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• 1990

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.4
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• pp.141-146
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• 2002

The mechanical and electrical properties of the pressureless sintered SiC-TiB$_2$electroconductive ceramic composites were investigated as functions of the transition metal of TiB$_2$. The result of phase analysis for the SiC-TiB$_2$ composites by XRD revealed $\alpha$-SiC(6H), TiB$_2$, and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phases. The relative density showed the lowest 84.8% for the SiC-TiB$_2$composites added with 39vol.%TiB$_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 7.8 MPa.m$^{1}$2/ for composites added with 39vol.%TiB$_2$under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%TiB$_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%TiB$_2$composites was all positive temperature coefficient resistance(PCTR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.EX>.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2083-2087
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.75-77
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• 2001

The mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electro conductive ceramic composites were investigated as functions of the transition metal of $TiB_2$. The result of phase analysis for the SiC-$TiB_2$ composites by XRD revealed $\alpha$-SiC(6H). $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density showed the lowest 84.8% for the SiC-$TiB_2$ composites added with 39vol.%$TiB_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of $7.8\;MPa{\cdot}m^{1/2}$ for composites added with 39vol.%$TiB_2$ under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%$TiB_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%$TiB_2$ composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].