• Nuclear Engineering and Technology
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• v.32 no.5
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• pp.504-513
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• 2000

The adsorption characteristics of methyl iodide generated from the simulated off-gas stream on various adsorbents such as silver ion-exchanged zeolite (AgX), zeocarbon and activated carbon were investigated. An extensive evaluation was made on the optimal silver ion-exchanged level for the effective removal of methyl iodide at temperature up to 38$0^{\circ}C$. The degree of adsorption efficiency of methyl iodide on silver ion-exchanged zeolite is strongly dependent of silver ion-amount and process temperature. The influence of temperature, methyl iodide concentration and silver ion-exchanged level on the adsorption efficiency is closely related to the pore characteristics of adsorbents. It would be facts that the effective silver ion-exchanged level was about 10 wt%, based on the degree of silver utilization for the removal of methyl iodide.

• Tunnel and Underground Space
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• v.6 no.2
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• pp.101-121
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• 1996

The thermomechanical characteristics of rocks such as temperature dependency of strength and deformation were experimentally investigated using Iksan granite, Cheonan tonalite and Chung-ju dolomite for proper design and stability analysis of underground structures subjected to temperature changes. For the temperature below critical threshold temperature $T_c$, the variation of uniaxial compressive strength, Young's modulus, Brazilian tensile strength and cohesion with temperature were slightly different for each rock type, but these mechanical properties decreased at the temperatures above $T_c$ by the effect of thermal cracking. Tensile strength was most affected by $T_c$, and uniaxial compressive strength was least affected by $T_c$. To the temperature of 20$0^{\circ}C$ with the confining prressure to 150 kg/$\textrm{cm}^2$, failure limit on principal stress plane and failure envelope on $\sigma$-$\tau$ plane of Iksan granite were continuously lowered with increasing temperature but those of Cheonan tonalite and Chung-ju dolomite showed different characteristics depending on minor principal stress on principal stress plane and normal stress on $\sigma$-$\tau$ plane. The reason for this appeared to be the effect of rock characteristics and confining pressure. Young's modulus was also temperature and pressure dependent, but the variation of Young's modulus was about 10%, which was small compared to the variation of compressive strength. In general, Young's modulus increased with increasing confining pressure and increased or decreased with increasing temperature to 20$0^{\circ}C$ depending on the rock type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.759-765
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• 2005

In this paper, developed isolator for gap filler is analyzed and designed using the simulation tool. Using the designed parameters, isolator is fabricated and tested in gap filler band. Temperature characteristics of isolator depend on magnet, YIG ferrite, and conductor etc. These require temperature stability and possible method of compensation for the temperature dependent effects. The temperature stabilization tries to use Ni-alloy. Developed isolator that compare with room temperature and high temperature characteristics has change fewer than 20 MHz. Implemented isolator shows more than 20 dB isolation characteristic at center frequency(2,650 MHz) and has 0.2 dB insertion loss in overall 100 MHz operating bandwidth. Return losses of input and output port are measured below -20 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.29-32
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• 2000

In this paper, an analytical model for I-V characteristics of a HEMTs is Proposed. The developed model takes into account the temperature dependence of drain current. In high-speed ICs for optical communication systems and mobile communication systems, temperature variation affects performance; for example the gain, efficiency in analog circuits and the delay time, power consumption and noise mrgin in digital circuits. To design such a circuit taking into account the temperature dependence of the current-voltage characteristic is indispensible. This model based on the analytical relation between surface carrier density and Fermi potential including temperature dependent coefficients.

• Structural Engineering and Mechanics
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• v.65 no.4
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• pp.453-464
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• 2018

In this paper, an efficient higher-order shear deformation theory is presented to analyze thermomechanical bending of temperature-dependent functionally graded (FG) plates resting on an elastic foundation. Further simplifying supposition are made to the conventional HSDT so that the number of unknowns is reduced, significantly facilitating engineering analysis. These theory account for hyperbolic distributions of the transverse shear strains and satisfy the zero traction boundary conditions on the surfaces of the plate without using shear correction factors. Power law material properties and linear steady-state thermal loads are assumed to be graded along the thickness. Nonlinear thermal conditions are imposed at the upper and lower surface for simply supported FG plates. Equations of motion are derived from the principle of virtual displacements. Analytical solutions for the thermomechanical bending analysis are obtained based on Fourier series that satisfy the boundary conditions (Navier's method). Non-dimensional results are compared for temperature-dependent FG plates and validated with those of other shear deformation theories. Numerical investigation is conducted to show the effect of material composition, plate geometry, and temperature field on the thermomechanical bending characteristics. It can be concluded that the present theory is not only accurate but also simple in predicting the thermomechanical bending responses of temperature-dependent FG plates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.582-585
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• 2001

InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.1-6
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• 2010

In this paper, RF Capacitance-Voltage(C-V) curve of short-channel MOSFET has been extracted from the room temperature to $225^{\circ}C$ using a RF method based on measured S-parameter data, and its high-temperature dependent characteristics are empirically modeled. It is observed that the voltage shift according to the variation of temperature in the weak inversion region of RF C-V curves is lower than the threshold voltage shift, but it is confirmed that this phenomenon is unexplainable with a long-channel theoretical C-V equation. The new empirical equation is developed for high-temperature dependent modeling of short-channel MOSFET C-V curves. The accuracy of this equation is demonstrated by observing good agreements between the modeled and measured C-V data in the wide range of temperature. It is also confirmed that the channel capacitance decreases with increasing temperature at high gate voltage.

• Smart Structures and Systems
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• v.24 no.2
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• pp.267-292
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• 2019

The present article addresses the coupled free vibration problem of skew magneto-electro-elastic plates (SMEE) considering the temperature-moisture dependent material properties. The plate kinematics follows Reddy's higher order shear deformation theory. With the aid of finite element methods, the governing equations of motion are derived considering the Hamilton's principle and solved by adopting condensation technique. The influence of different temperature and moisture dependent empirical constants on the frequency response of SMEE plate has been assessed. In addition, the natural frequencies corresponding to various fields are evaluated and the effect of empirical constants on these coupled frequencies is determined. A detailed parametric study has been carried out to assess the individual effects of temperature and moisture dependent empirical constants along with their combined effect, aspect ratio, length-to-width ratio, stacking sequence and boundary conditions. The results reveal that the external environment as well as the geometrical skewness has a significant influence on the stiffness of the SMEE plates.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.697-703
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• 2000

As device dimensions are lastly scaled down, impact ionization(I.I.) events are very important to analyze hot carrier transport in high energy region, and the exact model of impact ionization is demanded on device simulation. We calculate full band model by empirical pseudopotential method and the impact ionization rate is derived from modified Keldysh formula. We calculate impact ionization coefficients by full band Monte Carlo simulator to investigate temperature dependent characteristics of impact ionization for GaAs as a function of field. Resultly impact ionization coefficients are in good agreement with experimental values at look. We how energy is increasing along increasing the field, while energy is decreasing along increasing the temperature since the phonon scattering rates for emission mode are very high at high temperature. The logarithmic fitting function of impact ionization coefficients is described as a second orders function of temperature and field. The residuals of the logarithmic fitting function are mostly within 5%. We Dow, therefore, the logarithm of impact ionization coefficients has quadratic dependence on temperature, and we can save time of calculating the temperature dependent impact ionization coefncients as a function of field.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.460-464
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• 2000

As device dimensions are lastly scaled down, impact ionization(I.I.) events are very important to analyze hot carrier transport in high energy region, and the exact model of impact ionization is demanded on device simulation. We calculate full band model by empirical pseudopotential method and the impact ionization rate is derived from modified Keldysh formula. We calculate impact ionization coefficients by full band Monte Carlo simulator to investigate temperature-and field-dependent characteristics of impact ionization for GaAs. Resultly impact ionization coefficients are In good agreement with experimental values at 300k. We know energy is increasing along increasing the field. while energy is decreasing along increasing the temperature since the phonon scattering rates for omission mode are very high at high temperature. The logarithmic fitting function of impact ionization coefficients is described as a second orders function for temperature and field. The residuals of the logarithmic fitting function are mostly within 5%. We know, therefore, logarithm of impact ionization coefficients has quadratic dependence on temperature and field, and we can save time of calculating the temperature- and field-dependent impact ionization coefficients.