• Journal of Magnetics
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• v.19 no.1
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• pp.37-42
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• 2014

The equivalent model of a permanent magnet (PM) plays an important role in electromagnetic system calculation. A type of subsection model for a PM bar is established, to improve the accuracy of the traditional equivalent circuit method. The mathematical expression, and its end verification condition, are presented. Based on the analytical method and finite element method, the leakage permeance calculation of a PM bar in an open magnetic circuit is investigated. As an example, for a given certain type of PM bar, the magnetic flux of each section is validated by experiment, and by simulation. This model offers a foundation for building a high accuracy equivalent magnetic PM model in an electromagnetic system.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.293-302
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• 2015

Degraded data stability, weaker write ability, and increased leakage power consumption are the primary concerns in scaled static random-access memory (SRAM) circuits. Two new SRAM cells are proposed in this paper for achieving enhanced read data stability and lower leakage power consumption in memory circuits. The bitline access transistors are asymmetrically gate-underlapped in the proposed SRAM cells. The strengths of the asymmetric bitline access transistors are weakened during read operations and enhanced during write operations, as the direction of current flow is reversed. With the proposed hybrid asymmetric SRAM cells, the read data stability is enhanced by up to 71.6% and leakage power consumption is suppressed up to 15.5%, while displaying similar write voltage margin and maintaining identical silicon area as compared to the conventional memory cells in a 15 nm FinFET technology.

• Convergence Security Journal
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• v.16 no.7
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• pp.93-100
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• 2016

Important evidence or clue in general crime as well as crime relevant to computer has been discovered in digital devices including computer with advance of information technology and turning into a information-oriented society. A leakage of industrial technology and confidential business information is related to digital devices such as computer, smart phone, USB, etc. This paper deal with a current state and comparison analysis of digital forensic technology for developing way of forensic field, so we seek for method of preventing information leakage.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.51-55
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• 2006

MgO thin films were prepared through electron-beam deposition onto ITO-coated glass substrates in order to measure electrical, dielectric, and microstructural properties. Design of experiments was performed in this study with the aim to understanding of the effects of processing variables, e.g., substrate temperature and filament current of an e-beam evaporator statistically. Leakage currents, relative dielectric constants, and diffraction intensities of MgO thin films were analyzed statistically, following the analysis procedure provided in the design of experiments. The leakage current level of MgO thin films has been found to be statistically significant at the level of $\alpha=0.1$.

• Proceedings of the Korea Water Resources Association Conference
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• 2005.09a
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• pp.287-287
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• 2005

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• International Journal of Fluid Machinery and Systems
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• v.3 no.3
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• pp.235-244
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• 2010

Recent studies on the moment whirl due to leakage flow in the back shroud clearance of hydro-turbine runners or centrifugal pump impellers are summarized. First, destabilizing effect of leakage flow is discussed for lateral vibrations using simplified models. Then it is extended to the case of whirling motion of an overhung rotor and the criterion for the instability is obtained. The fluid moment caused by a leakage clearance flow between a rotating disk and a stationary casing was obtained by model tests under whirling and precession motion of the disk. It is shown that the whirl moment always destabilizes the whirl motion of the overhung rotor while the precession moment destabilizes the precession only when the precession speed is less than half the rotor speed. Then vibration analyses considering both whirl and precession are made by using the hydrodynamic moments determined by the model tests. For larger overhung rotors, the whirl moment is more important and cause whirl instability at all rotor speed. On the other hand, for smaller overhung rotors, the precession moment is more important and cancels the destabilizing effect of the whirl moment.

• International Journal of Internet, Broadcasting and Communication
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• v.7 no.2
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• pp.65-72
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• 2015

Although the development of digital technology and network has brought great convenience in modern lives, amongst the aggravated complexity in the contemporary society, modern minds who have failed to create genuine relationships undergo a sense of alienation and solitude that may appear as a type of social pathology called cellular-phone addiction. Also, while the emergence of the information age seemingly brings about benefits including diverse acquisition regarding knowledge and broader communication, underneath exists side effects involving leakage of private information. Especially, being excessively addicted to relationship network may induce one to become insensitive towards leakage of private information without recognizing, and thereby instigating yet another social problem. Media art is very practical in terms of suggesting a critical perspective concerning social phenomena and elevating them into a work of art by rendering them artistically. Particularly, when social problems of the modern days are expressed through digital technology, media art provides the audience with a foundation that will enable them to sympathize without hostility. This dissertation calls attention to the contemporary problems regarding cellular-phone addiction and possible hazards of information leakage based on media art, while at the same time proposing the production process of a media art work that attempts to raise awareness and sympathy on such social issues.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.15-17
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• 2002

Leakage inductance and temperature rise are two of the more impotent problems facing the magnetic core technology of today's high frequency transformers. Excessive leakage inductance increases the stress on the switching transistors and limits the duty-cycle, and excessive temperature rise can lead the design limitation of high frequency transformer with high current. The flat transformer technology provides a very good solution to the problems of leakage inductance and thermal management for high frequency power. The critical magnetic components and windings are optimized and packaged within a completely assembled module. The turns ratio in a flat transformer is determined as the product of the number of elements or modules times the number of primary turns. The leakage inductance increase proportionately to the number of elements, but since it is reduced as the square of the turns, the net reduction can be very significant. The flat transformer modules use cores which have no gap. This eliminates fringing fluxes and stray flux outside of the core. The secondary windings are formed of flat metal and are bonded to the inside surface of the core. The secondary winding thus surrounds the primary winding, so nearly all of the flux is captured.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.10
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• pp.562-567
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• 2013

1D-numerical analysis of the network algorithm with the orifice equation for the relationship between pressure difference and flowrate has been mostly used to analyse leakage flow at the gap. In this study, a 3D-numerical method applying momentum loss model to the gap region in the computational domain is represented to reflect effectively the effect of leakage flow by determining the proportion of pressure difference to air passage velocity. While the 3D-numerical method is verified through the computation of the two compartments model, the numerical analysis of the stack effect in a building stairway is performed. As the temperature of air outside drops, the pressure in the upper stairway and leakage flowrate through the gap in the door rise. The change of gap area does not have an effect on pressure in the stairway for the analysis conditions.