• ETRI Journal
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• v.23 no.4
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• pp.151-157
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• 2001

Spectroscopic and thermal analysis indicates that tellurite glasses doped with $B_2O_3$ and $GeO_2$ are promising candidate host materials for wide-band erbium doped fiber amplifier (EDFA) with a high 980 nm pump efficiency. In this study, we measured the thermal stabilities and the emission cross-sections for $Er^{3+}:^{4}I_{13/2}\;{\to}\;^{4}I_{15/2}$ transition in this tellurite glass system. We also determined the Judd-Ofelt parameters and calculated the radiative transition rates and the multiphonon relaxation rates in this glass system. The 15 mol% substitution of $B_2O_3$ for $TeO_2$ in the $Er^{3+}-doped\;75TeO_2-20ZnO-5K_2O$ glass raised the multiphonon relaxation rate for $^4I_{11/2}\;{\to}\;^4I_{13/2}$ transition from 4960 $s^{-1}$ to 24700 $s^{-1}$, but shortened the lifetime of the $^4I_{13/2}$ level by 14 % and reduced the emission cross-section for the $^4I_{13/2}\;{\to}\;^4I_{15/2}$ transition by 11%. The 15 mol% $GeO_2$ substitution in the same glass system also reduced the emission cross-section but increased the lifetime by 7%. However, the multiphonon relaxation rate for $^4I_{11/2}{\to}^4I_{13/2}$ transition was raised merely by 1000 $s^{-1}$. Therefore, a mixed substitution of $B_2O_3$ and $GeO_2$ for $TeO_2$ was concluded to be suitable for the 980 nm pump efficiency and the fluorescence efficiency of $^4I_{13/2}{\to}^4I_{15/2}$ transition in $Er^{3+}-doped$ tellurite glasses.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.181-182
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• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Journal of Magnetics
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• v.10 no.4
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• pp.149-151
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• 2005

The electric properties of a single crystal bismuth telluride doped with a small concentration of Erbium, $Bi_{z-x}Er_xTe_3$ with x = 0.002, are investigated as a function of temperature. The resistivity was obtained by using the van der Pauw method. The measured electrical resistivity is 78 ${\mu}{\Omega}cm$ at 4.2 K. The charge density of $Bi_{z-x}Er_xTe_3$ is found to be $2{\times}10^{19}/cm^3$ at 4.2 K. It turns out that $Bi_{z-x}Er_xTe_3$ is a p-type semiconductor. It is discussed that the high mobility and less density support that $Bi_{z-x}Er_xTe_3$ is a potential sensor with high energy resolution. Comparison with an established material (i.e. Au:Er alloy) is also discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.21-21
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• 1996

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1260_1261
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• 2009

A detailed investigation and structure of tested samples are clearly presented. As a reference, $Ge_1Se_1Te_2$/Sb only sample was also investigated. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this esperiment in order to solve that problem by doping-Sb.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.198-202
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• 1994

Zn0.5Mg0.5Te 및 Zn0.5Mg0.5Te:Co 단결정을 온도진동법을 응용한 화학수송법으로 성장시켰고, 광 학적 energy gap의 온도의존성은 Varshni의형식에 잘 적용되었다. 광학적 energy gap의 온도의존성으 로부터 열역학 기본함수인 entropy, enthalpy, heat capacity를 구했다.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.245-251
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• 1998

Bi-doped n-type PbTe thermoeletric materials were fabricated by mechanical alloying and hot pressing. The intering characteristics and thermoelectric properties of the hot- pressed PbTe were characterized and compared with the properties of the specimens prepared by meltingigrinding method. The hot-pressed PbTe specimens fabricated by mechanical alloying exhibited more negative Seebeck coefficient, higher electrical resistivity and lower thermal conductivity. compared to ones prepared by meltingigrinding. The maximum figure-of-merit increased and the temperature for the maximum figure-of-merit shifted to lower temperature for the specimens fabricated by mechanical alloying. When hot pressed at $650^{\circ}C$, 0.3 wt% Bi-doped PbTe fabricated by mechanical alloying and meltingjgrinding exhibited maximum figure-of-merits of $1.33\times10^{-3}/K$ at $200^{\circ}C$ and $1.07\times10^{-3}/K$ at $400^{\circ}C$ respectively.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.24-29
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• 2004

Nanocomposite of Te doped $SiO_2$ films was prepared for the new functional materials like non-linear optic materials, selective absorption and transmission films. The effects of particle size and morphology with different hydrolysis conditions on the properties were examined with TGA/DTA. XRD. UV-spectrometer, SPM, SEM and EDS. It was found that Te/$SiO_2$ films showed high absorption peak at 550nm visible region by plasma resonance of Te fine particles. The Rm surface roughness of the films was about 2.5 nm and the size of Te particles was 5~10nm.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.257-263
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• 2000

Thermoelectric properties of the 0.05wt% $SbI_3$-doped n-type $Bi_2(Te_{0.95}Se_{0.05})_3$ alloy, prepared by melting/grinding and hot pressing, were investigated with variation of the annealing time up to 36 hours. The electron concentration of the 0.05wt% SbI$_3$-doped n-type $Bi_2(Te_{0.95}Se_{0.05})_3$ alloy decreased with increasing the annealing time. The figure-of-merit of the 0.05wt% $SbI_3$-doped n-type $Bi_2(Te_{0.95}Se_{0.05})_3$ alloy was improved from $2.1{\times}10^{-3}/K$ to $2.35{\times}10^{-3}/K$ by annealing at $500^{\circ}C$ for 3 hours. When annealed longer than 12 hours, however, the figure-of-merit decreased substantially due to the increase of the electrical resistivity.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.360-361
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• 2004

An atomization doping process is proposed to manufacture nonlinear optical fiber containing higher concentration of PbTe nano-particles in the core of the fiber than that by the conventional solution doping process. The absorption peaks appeared near 725nm, 880nm, and 1050nm are attributed to the PbTe quantum dots in the fiber core.