• Title/Summary/Keyword: Target mobility

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Utilization of a Microphone to Acquire Mobility in Seismic Testing (탄성파시험의 이동성 확보를 위한 마이크로폰 센서의 활용)

  • Joh, Sung-Ho;Ramli, Bukhari;Rahman, Norinah Abd
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.33 no.4
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    • pp.1509-1521
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    • 2013
  • Social demand for the stability of structures lead to the development of the technology to accomplish it. The non-destructive seismic technique, which is able to assess structural integrity of infrastructures, belongs to this category. Seismic technique is focused on the measurement of seismic velocity propagating through the material, and has to utilize sensors coupled to material surface, which does not allow the testing to be performed on the fly. In this paper, a general vocal microphone, which works as a non-contact sensor, was adopted to facilitate seismic testing with mobility and efficiency improved. The target of using microphones was oriented toward quality assessment of compacted subgrade, stiffness evaluation and health monitoring of concrete structures. Experimental parametric study and field applications were performed to investigate reliability and efficiency of microphones. Finally, the optimal test configuration of microphones was suggested for resonance tests and surface-wave tests.

MPP (modulated pulse plasma) 스퍼터링 방법으로 증착한 100 nm 이하에서의 Indium-Tin-Oxide (ITO)박막 특성

  • Yu, Yeong-Gun;Jeong, Jin-Yong;Ju, Jeong-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.256.2-256.2
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    • 2014
  • 최근 고출력 펄스 스퍼터링, HPPMS (high power pulsed magnetron sputtering)을 개선한 기술이 개발되고 있다. High power impulse magnetron sputtering (HIPIMS)이라고도 불려지는 이 기술은 Kouznetsov1) 에 의해 개발되었으며, 짧은 주기 동안 높은 peak power 밀도를 얻을 수 있기 때문에, 스퍼터링시 높은 이온화율을 만들 수 있다. 스퍼터 된 종들의 높은 이온화는 다양한 분야에서 기존 코팅 물질의 특성 개선 및 self-assisted 이온 증착 공정을 통해 우수한 박막을 제조하는데 기여되고 있다. 그러나 HIPIMS는 순간 전력 밀도가 MW수준으로 높아서 고융점, 고열전도도의 물질에만 적용할 수 있다는 단점을 가지고 있다). 최근에 HIPIMS를 대체하기 위해 modulated pulse POWER (MPP)가 개발되었다. 이것은 스퍼터 된 종들의 이온화율을 높일 수 있음과 동시에 여러 가지 물질에 적용할 수 있다고 보고하고 있다. MPP와 HIPIMS와의 차이점은 HIPIMS는 간단한 하나의 초고출력 펄스를 이용하는 반면에, MPP는 펄스 길이 3 ms 안에서 다양하게 조절이 가능하며, 한 전체 펄스 주기 안에서 다중 세트 펄스와 micro 펄스를 자유롭게 조합하여 인가할 수 있다는 장점이 있다. 본 실험에서는 In2O3 : SnO2의 조성비 10:1 wt% target을 사용하였으며, Ar:O2의 유량비는 10:1의 비율로, 기판의 온도를 올려 주지 않는 상태에서 실험을 하였다. Ar 유량을 40 sccm으로 고정시킨 후 O2의 유량을 2~6 sccm에 대하여 비교를 하였다. 박막의 두께를 100 nm로 이하로 하였을 때 비저항은 $7.6{\times}10-4{\Omega}cm$의 값을, 80% 이상의 투과도와 10 cm2/Vs 이상의 mobility를 얻을 수 있었다. 또한 박막 두께 150 nm로 고정, substrate moving에 따른 ITO 박막의 차이를 알아보았다. 비저항의 값은 $5.6{\times}10-4{\Omega}cm$의 값을, 80% 이상의 투과도와 15 cm2/Vs의 값을 얻었다.

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Effects of Ta addition in Co-sputtering Process for Ta-doped Indium Tin Oxide Thin Film Transistors

  • Park, Si-Nae;Son, Dae-Ho;Kim, Dae-Hwan;Gang, Jin-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.334-334
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    • 2012
  • Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

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A Study on Service Design of Public transportation for Transportation Vulnerable - Focused on elderly and Foreigner - (교통약자를 고려한 대중교통 서비스 디자인 연구 - 고령자 및 외국인 중심으로 -)

  • Lee, Seung Min;Pan, Young Hwan;Song, In ho
    • Design Convergence Study
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    • v.15 no.2
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    • pp.223-236
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    • 2016
  • The infrastructure of public transportation of Seoul which has been developed in parallel with the progress of modernization receives successful performance evaluation at home and abroad, currently representing the highest transport distribution ratio. In spite of this fact, the public transportation of Seoul, which has entered into advanced phase of services, still leaves much to be desired, in particular, the mobility considering the transportation vulnerable is not well assured. It is time to provide proper supports for the efficient mobility of public transportation in accordance with the social changes present in the aging and multicultural society. This study inquired about the current status of public transportation and that of its users. In addition, the main inquiry target was oriented to the elderly and foreigners for observation and investigation, as well as for the analysis of their behavior. Furthermore, through in-depth interviews, inconvenient factors have been found according to public transportation means and its usage phase, by carrying out detailed evaluations of public transportation services. Based on this, the enhancement elements were defined and the corresponding concept was designed through a series of idea workshops, and this study intended to contribute to improving future public transportation services by proposing the improvement scheme applicable to the upcoming public transportation.

RNA Editing Enzyme ADAR1 Suppresses the Mobility of Cancer Cells via ARPIN

  • Min Ji Park;Eunji Jeong;Eun Ji Lee;Hyeon Ji Choi;Bo Hyun Moon;Keunsoo Kang;Suhwan Chang
    • Molecules and Cells
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    • v.46 no.6
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    • pp.351-359
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    • 2023
  • Deamination of adenine or cytosine in RNA, called RNA editing, is a constitutively active and common modification. The primary role of RNA editing is tagging RNA right after its synthesis so that the endogenous RNA is recognized as self and distinguished from exogenous RNA, such as viral RNA. In addition to this primary function, the direct or indirect effects on gene expression can be utilized in cancer where a high level of RNA editing activity persists. This report identified actin-related protein 2/3 complex inhibitor (ARPIN) as a target of ADAR1 in breast cancer cells. Our comparative RNA sequencing analysis in MCF7 cells revealed that the expression of ARPIN was decreased upon ADAR1 depletion with altered editing on its 3'UTR. However, the expression changes of ARPIN were not dependent on 3'UTR editing but relied on three microRNAs acting on ARPIN. As a result, we found that the migration and invasion of cancer cells were profoundly increased by ADAR1 depletion, and this cellular phenotype was reversed by the exogenous ARPIN expression. Altogether, our data suggest that ADAR1 suppresses breast cancer cell mobility via the upregulation of ARPIN.

Effect of Titanium Addition on Indium Zinc Oxide Thin Film Transistors by RF-magnetron Sputtering (RF-magnetron sputtering을 이용한 TiIZO 기반의 산화물 반도체에 대한 연구)

  • Woo, Sanghyun;Lim, Yooseong;Yi, Moonsuk
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.7
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    • pp.115-121
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    • 2013
  • We fabricated thin film transistors (TFTs) using TiInZnO(TiIZO) thin films as active channel layer. The thin films of TiIZO were deposited at room temperature by RF-magnetron co-sputtering system from InZnO(IZO) and Ti targets. We examined the effects of titanium addition by X-ray diffraction, X-ray photoelectron spectroscopy and the electrical characteristics of the TFTs. The TiIZO TFTs were investigated according to the radio-frequency power applied to the Ti target. We found that the transistor on-off currents were greatly influenced by the composition of titanium addition, which suppressed the formation of oxygen vacancies, because of the stronger oxidation tendency of Ti relative to that of Zn or In. A optimized TiIZO TFT with rf power 40W of Ti target showed good performance with an on/off current ratio greater than $10^5$, a field-effect mobility of 2.09 [$cm^2/V{\cdot}s$], a threshold voltage of 2.2 [V] and a subthreshold swing of 0.492 [V/dec.].

Study of the effect of vacuum annealing on sputtered SnxOy thin films by SnO/Sn composite target (SnO/Sn 혼합 타겟으로 스퍼터 증착된 SnO 박막의 열처리 효과)

  • Kim, Cheol;Cho, Seungbum;Kim, Sungdong;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.2
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    • pp.43-48
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    • 2017
  • Conductive $Sn_xO_y$ thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of $Sn_xO_y$ thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at $300^{\circ}C$ for 1 hour in vacuum. Except $P_{O2}=0%$ sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type $Sn_xO_y$ thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the $P_{O2}=12%$ were $6.36{\times}10^{18}cm^{-3}$ and $1.02cm^2V^{-1}s^{-1}$ respectively after annealing.

A Study on the Fabrication and Characteristics of ITO Thin Film Deposited by Magnetron Sputtering Method (마그네트론 스퍼터링법을 이용한 Indium-Tin Oxide 박막의 제작과 그 특성에 관한 연구)

  • 조길호;김여중;김성종;문경만;이명훈
    • Journal of Advanced Marine Engineering and Technology
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    • v.24 no.6
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    • pp.61-69
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    • 2000
  • Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

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A Wireless Traffic Load-Balancing Algorithm based on Adaptive Bandwidth Reservation Scheme in Mobile Cellular Networks (셀룰러 망에서 적응적 대역폭 예약 기법을 이용한 무선 트래픽 부하 균형 알고리즘)

  • 정영석;우매리;김종근
    • Proceedings of the Korea Institute of Convergence Signal Processing
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    • 2001.06a
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    • pp.21-24
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    • 2001
  • For very large multimedia traffic to be supported successfully in wireless network environment, it is necessary to provide Quality-of-Service(QoS) guarantees between mobile hosts(clients). In order to guarantee the Qos, we have to keep the call blocking probability below target value during handoff session. However, the QoS negotiated between the client and the network may not be guaranteed due to lack of available channels for traffic in the new cell, since mobile clients should be able to continue their on-going sessions. In this paper we propose a efficient load-balancing algorithm based on the adaptive bandwidth reservation scheme for enlarging available channels in a cell. We design a new method to predict the mobility of clients using MPT(mobility profile table). This method is then used to reserve a part of bandwidths for handoff calls to its adjacent cells and this reserved bandwidth can be used for handoff call prior to new connection requests. If the number of free channels is also under a low threshold value, our scheme use a load-balancing algorithm with a adaptive bandwidth reservation. In order to evaluate the performance of our algorithm, we measure the metrics such as the blocking probability of new calls and dropping probability of handoff calls, and compare with other existing schemes.

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Spatial Factors' Analysis of Affecting on Automated Driving Safety Using Spatial Information Analysis Based on Level 4 ODD Elements (Level 4 자율주행서비스 ODD 구성요소 기반 공간정보분석을 통한 자율주행의 안전성에 영향을 미치는 공간적 요인 분석)

  • Tagyoung Kim;Jooyoung Maeng;Kyeong-Pyo Kang;SangHoon Bae
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.22 no.5
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    • pp.182-199
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    • 2023
  • Since 2021, government departments have been promoting Automated Driving Technology Development and Innovation Project as national research and development(R&D) project. The automated vehicles and service technologies developed as part of these projects are planned to be subsequently provided to the public at the selected Living Lab City. Therefore, it is important to determine a spatial area and operation section that enables safe and stable automated driving, depending on the purpose and characteristics of the target service. In this study, the static Operational Design Domain(ODD) elements for Level 4 automated driving services were reclassified by reviewing previously published papers and related literature surveys and investigating field data. Spatial analysis techniques were used to consider the reclassified ODD elements for level 4 in the real area of level 3 automated driving services because it is important to reflect the spatial factors affecting safety related to real automated driving technologies and services. Consequently, a total of six driving mode changes(disengagement) were derived through spatial information analysis techniques, and the factors affecting the safety of automated driving were crosswalk, traffic light, intersection, bicycle road, pocket lane, caution sign, and median strip. This spatial factor analysis method is expected to be useful for determining special areas for the automated driving service.