• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.1053-1056
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• 2004

Research in Human Computer Interface (HCI) is towards development of an application environment able to deal with interactions of both human and computers that can be more intuitive and efficient. This can be achieved by bridging the gap between the synthetic virtual environment and the natural physical environment. Thus a project called Tangible Space Initiative (TSI) has been launched by KIST. TSI is subdivided into Tangible Interface (TI) which controls 3D cyber space with user's perspective, Responsive Cyber Space (RCS) which creates and controls the virtual environment and Tangible Agent (TA) which senses and acts upon the physical interface environment on behalf of any components of TSI or the user. This paper is a brief introduction to a new generation of Human Computer Interface that bring user to a new era of interaction with computers in the future.

• 한국음향학회:학술대회논문집
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• 한국음향학회 2004년도 춘계학술발표대회 논문집 제23권 1호
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• pp.319-322
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• 2004

본 연구에서는 DNA의 상보적인 결합을 이용하여 DNA 혼성화 반응을 감지할 수 있는 SH형 SAW 센서를 개발하였다. 측정에 사용된 DNA는 15개의 염기를 가진 올리고 뉴클레오티드를 사용하였으며 이에 대해 상보적 결합이 가능한 염기서열을 가진 것과 그렇지 않은 미스매치 형태의 DNA 올리고뉴클레오티드를 이용하여 DNA 혼성화 반응 특성을 측정하였다. SH형 SAW 센서는 압전 단결정 $LiTaO_{3}$를 사용하여 100 MHz 발진되는 형태로 제작하였으며, 센서의 지연선 위에 Ti/Au 층을 증착하여 SH기가 수식된 탐침 DNA의 고정화가 가능하게 하였다. 제작된 센서는 Au가 증착된 박막위에 탐침 DNA를 SAM 방법으로 고정화 시켰을 경우와 고정화된 탐침 DNA와 표적 DNA와의 혼성화 반응을 시키고 난 후의 센서의 주파수 변화를 각각 측정하였다. 개발된 DNA 혼성화 반응 측정용 SH형 SAW센서는 DNA 혼성화 특성에 기인한 질량하중 효과에 따른 안정적인 주파수 변화를 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.672-675
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• 2001

The Sr$\sub$0.8/Bi$\sub$2.4/Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing annealing tempera ture from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The dielectric constant and leakage current density is 213, 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ respectively at annealing temperature of 750[$^{\circ}C$].

• 한국세라믹학회지
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• 제45권5호
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• pp.251-255
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• 2008

Microwave dielectric properties of $MgTiO_3,\;MgWO_4,\;MgNb_2O_6$, and $MgTa_2O_6$ were investigated based on the structural characteristics. The dielectric constant (K) was dependent on the dielectric polarizabilities of the specimens, and the deviation of the observed dielectric polarizabilities (${\alpha}_{obs.}$) from the theoretical dielectric polarizabilities (${\alpha}_{theo.}$) were decreased with increasing of Mg-site bond valence. Quality factors (Qf) were affected by the sharing type of $MgO_6$ and $BO_6$ octahedra. Temperature coefficient of resonant frequency (TCF) was decreased with increasing of average octahedral distortion.

• 전기전자학회논문지
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• 제22권2호
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• pp.484-487
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• 2018

5 MeV proton-irradiation with total dose of $10^{15}/cm^2$ was performed on AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with various gate metals including Ni, TaN, W, and TiN to investigate the degradation characteristics. The positive shift of pinch-off voltage and the reduction of on-current were observed from irradiated HEMTs regardless of a type of gate materials. Hall and transmission line measurements revealed the reduction of carrier mobility and sheet charge concentration due to displacement damage by proton irradiation. The shift of pinch-off voltage was dependent on Schottky barrier heights of gate metals. Gate leakage and capacitance-voltage characteristics did not show any significant degradation demonstrating the superior radiation hardness of Schottky gate contacts on GaN.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1932-1938
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• 2003

We have applied spectroscopic ellipsometry to investigate $high-{\kappa}$ dielectric thin films and correlate their optical properties with fabrication processes, in particular, with high temperature annealing. The use of high-k dielectrics such as $HfO_{2}$, $Ta_{2}O_{5}$, $TiO_{2}$, and $ZrO_{2}$ as the replacement for $SiO_{2}$ as the gate dielectric in CMOS devices has received much attention recently due to its high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and optical density will be discussed.

• 한국표면공학회지
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• 제24권1호
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• pp.25-30
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• 1991

The evaporation characteristics of Ag, Al, Au, Cr. Cu, In, Mg, Mn, Pb, Pd, Si, SiO, Sn, Ti and Zn with the various resistive heating sources have been studied. The employed sources are refractory metal (Mo, Ta and W) boats, W-wire, ceramic (usually Al2O3)-coated and -barriered refractory metal boats, and special boats such as baffled boats and intermetallic boats (nitride compound and graphite). We investigated the melting mode, evaporation rate at a specific power, and lifetime of the sources. A special boat holder is also discussed which is needed to cool the sources at a large heat capacity.

• 대한의용생체공학회:의공학회지
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• 제17권2호
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• pp.155-164
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• 1996

In the clinical environment, measurements of some characteristics of the skeletal muscle are currently used to assess the severity of a neuromuscular disease or in some cases to assist in making a diagnosis. But a quantitative method of evaluation has not yet been introduced satisfactorily. In this paper, the skeletal EMG(biceps muscle, masseter muscle) analysis has been processed both in the time and in the frequency domain by designing the digital signal processing system based on pentium PC and transputer (IMS 7805). The experiment have been performed in five normal subjects, and various parameters have been statistically tested and compare4 As a results, the effective parameters obtained for the evaluation of skeletal EMG electrical activity are turn analysis, MiTi, MiTa, IEMG, PDF in the time domain, and are mean frequency, median frequency, skewness, kurtosis, muscle fatigue slope in the frequency domain. The designed H/W and S/W in this study can be used effectively for the establishment of EMG data base and for clinical research.

• 한국생명과학회:학술대회논문집
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• 한국생명과학회 2005년도 국제학술심포지움 The 44th Annual Meeting of Korean Society for Life Science
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• pp.163-163
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• 2005