• Title/Summary/Keyword: TWSCR

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A Study on the Novel SCR NANO ESD Protection Device Design and fabrication (새로운 구조의 나노급 ESD 보호소자 설계 및 제작에 관한 연구)

  • Kim, Kui-Dong;Lee, Jo-Woon;Park, Sang-Jo;Lee, Yoon-Sik;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.9 no.2 s.17
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    • pp.161-169
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    • 2005
  • This paper presents the new structural Low voltage LVTSCR and TWSCR ESD protection circuit. The proposed ESD protection circuit has lower triggering voltage than conventional circuits. And the LVTSCR has the triggering voltage of 9V, current of 7mA and can pass below 0.8KV (150mA/um). The triggering voltage of the Triple-well SCR measured to 6V and the current is 40mA. By the substrate and gate bias, the triggering voltage is lowered down to $4{\sim}5.5V$.

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