• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.713-715
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• 2012

본 논문은 24GHz 차량 추돌 예방 레이더 시스템-온-칩을 위한 입력 임피던스, 전압이득 및 잡음지수를 자동으로 측정할 수 있는 새로운 형태의 고주파 자체 내부검사(BIST, Built-In Self-Test) 회로를 제안한다. 이러한 BIST 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정 ($f_T/f_{MAX}$=140/120GHz)으로 설계되어 있다. 알고리즘은 LabVIEW로 구현되어 있다. BIST 알고리즘은 입력 임피던스 정합과 출력 직류 전압 측정원리를 이용한다. 본 논문에서 제안하는 방법은 자동으로 쉽게 고주파 회로의 성능변수를 측정할 수 있기 때문에 시스템-온-칩의 저가 성능 검사의 대안이 될 것으로 기대한다.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.655-658
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• 2005

Due to reduced device sizes and threshold voltages, leakage current becomes an important issue in CMOS design. In a CMOS combinational logic circuit, the leakage current in the standby state depends on the state of the inputs and thus can be minimized by applying an optimal input when the circuit is idling. In this paper, we present a New Input Vector Control algorithm, called Leakage Minimization by Input vector Control (LMIC) for minimal leakage power. This algorithm finds the minimal leakage vector and reduces leakage current up to 22.% on the average, for TSMC 0.18um process parameters. Minimal leakage vectors are very useful in reducing leakage currents in standby mode of operation.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.751-754
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• 2005

In this paper, we designed a vertex shader for mobile devices. Proposed Vertex shader is compatible with the OpenGL ARB & DirectX 8.0 Vertex Shader 1.1 and is organized of modified IEEE-754 24 bits float point SIMD architecture. All float point arithmetic unit process 1 cycle operation with 100Mhz frequency more. We made a vertex shader demo system with Xilinx-Virtex II and get synthesis result that confirm 11M gates size at TSMC 0.13um @ 115MHz.

• IT SoC Magazine
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• s.19
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• pp.24-28
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• 2007

올해 44회를 맞이한 DAC(Design Automation Conference)는 6월 4일부터 8일까지 5일간 캘리포니아 샌디에고에서 개최되었다. 이번 DAC에도 샌프란시스코에서 열렸던 43회 DAC와 마찬가지로 인텔, IBM, ARM, Sun Microsystems 등 첨단 SoC/IP 설계회사와 Cadence, Synopsys 등 EDA 개발회사, 그리고 TSMC, UMC 등 유수의 파운드리회사들이 참가하였다. 전시회 참여업체는 약 250여개로 예년보다 약간 증가하였고 총 참관객수는 11,000여명으로 다소 줄어들었다. 하지만 국내 참여업체 관계자들은 참관객들의 질적인 수준이 작년 DAC보다 더 높아 제품을 홍보하고 관련 업계 사람들과 정보를 교환하기에 더없이 좋은 기회였다고 평가했다. 또한 이번 DAC 컨퍼런스는 총 10개 트랙, 53개의 세션들이 진행되었으며 약 161개의 논문이 발표되어 매우 역동적인 기술교류가 이루어졌다. 여기에서는 44th DAC의 주요 이슈와 전시회에 참여하였던 국내 SoC업체들의 제품에 대해 살펴 보고자한다.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.415-418
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• 2007

This paper presents the design and analysis of LNA-Mixer for 2.45GHz RFID reader. The LNA is implemented by PCSNIM method for low power consumption. The Mixer is implemented by using the Gilbert-type configuration, current bleeding technique, and the resonating technique for the tail capacitance. The connection between the two designed circuits is made by active balun. This LNA-Mixer has about 35dB for -40dBm input RF power, LO power is 0dBm and RF frequency is 2.45 GHz and IIP3 is -4dBm. The layout of LNA-Mixer for one-chip design in a $0.18-{\mu}m$ TSMC process has 2.6mm ${\times}$ 1.3mm size.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.4
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• pp.761-767
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• 2007

In this paper, we deal wih a concurrent dual band low noise amplifier for a Radio Frequency Identification(RFID) reader operating at 912MHz and 2.45GHz. The design of the low noise amplifier is based on the TSMC $0.18{\mu}m$ CMOS technology. The chip size is $1.8mm\times1.8mm$. To improve the noise figure of the circuit, SMD components and a bonding wire inductor are applied to input matching. Simulation results show that the 521 parameter is 11.41dB and 9.98dB at 912MHz and 2.45GHz, respectively The noise figure is also determined to 1.25dB and 3.08dB at the same frequencies with a power consumption of 8.95mW.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.439-440
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• 2018

본 논문에서는 차량용 레이더를 위한 저 위상잡음 24GHz CMOS 전압제어발진기를 제안한다. 이러한 회로는 1.8볼트 전원에서 동작하며, 낮은 위상잡음을 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 고주파 CMOS 공정으로 구현되어 있다. 제안한 회로는 최근 발표된 연구결과에 비해 저 전력동작에서 저 위상잡음 및 낮은 잡음지수 특성을 보였다.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.479-481
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• 2006

This paper describes a 2.5V, 320MHz low-noise and low-power Phase Locked Loop(PLL) using a noise-rejected Voltage Controlled ring Oscillator(VCO) fabricated in a TSMC 0.25um CMOS technology. In order to improve the power consumption and oscillation frequency of the PLL, The VCO consist of three-stage fully differential delay cells that can obtain the characteristic of high speed, low power and low phase noise. The VCO operates at 7MHz -670MHz. The oscillator consumes l.58mA from a 320MHz frequency and 2.5V supply. When the PLL with fully-differential ring VCO is locked 320MHz, the jitter and phase noise measured 26ps (rms), 157ps (p-p) and -97.09dB at 100kHz offset. We introduce and analysis the conditions in which ring VCO can oscillate for low-power operation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.101-109
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• 2017

This paper presents a high-throughput low-complexity 512-point eight-parallel mixed-radix multipath delay feedback (MDF) fast Fourier transform (FFT) processor architecture for orthogonal frequency division multiplexing (OFDM) applications. To decrease the number of twiddle factor (TF) multiplications, a mixed-radix $2^4/2^3$ FFT algorithm is adopted. Moreover, a dual-path shared canonical signed digit (CSD) complex constant multiplier using a multi-layer scheme is proposed for reducing the hardware complexity of the TF multiplication. The proposed FFT processor is implemented using TSMC 90-nm CMOS technology. The synthesis results demonstrate that the proposed FFT processor can lead to a 16% reduction in hardware complexity and higher throughput compared to conventional architectures.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1305-1308
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• 2008

In this study, we redesigned the reliable integrated on-panel display gate driver that was equipped with dual pull-down as well as controlled discharge-path structure to reduce the high voltage stress effect and realized with TSMC 0.35 um CMOS-based technology before. An improved discharge path and a low noise design are proposed for our new a-Si TFT process implementation. Our novel reliable gate driver design can make each cell of shift register to be insensitive to the coupling noise of that stage.