• Title/Summary/Keyword: THz wave

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Generation of Millimeter and Terahertz Wave (밀리미터파와 테라헤르츠-파의 발생기술)

  • Paek, M.C.;Kim, S.I.;Kang, K.Y.;Nagatsuma, T.
    • Electronics and Telecommunications Trends
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    • v.24 no.5
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    • pp.119-132
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    • 2009
  • 새로운 전파자원으로서 초고속 무선통신뿐만 아니라 분광, 센싱, 이미징 등 여러 분야에서 다양한 응용이 기대되는 연속 밀리미터파와 테라헤르츠-파에 대한 발생 및 응용기술을 논하였다. 밀리미터파의 경우 전자소자를 이용한 방법을 주로 사용하지만, 테라헤르츠-파는 전자 및 광기술을 모두 사용하여 발생시킬 수 있다. 본 글에서는 광학적 방식을 이용한 연속 밀리미터/테라헤르츠-파의 발생기술과 이를 이용한 응용기술에 대하여 논하였다. 최근 고출력 PD의 기술발전에 따라 광학적 발생방식의 밀리미터/테라헤르츠-파를 이용한 CW 분광 측정이 유용할 것으로 보인다. 현 단계에서 1THz에서의 최대 가용 출력은 약 $10{\mu}W$ 정도이나, 포화전류와 열 관리 문제를 해결하고 PD 성능의 개선을 함으로써, 단일 소자에서 1THz에 대한 최대 가용출력이 $100{\mu}W$ 수준이 될 것으로 기대된다. 연속 밀리미터/테라헤르츠-파 분광법은 더욱 정밀하고, 다양하며 경제적인 분광 시스템 기술에 크게 기여할 것으로 전망된다.

Highly birefringent terahertz plastic photonic crystal fibers (높은 복굴절율을 갖는 테라헤츠용 광결정 섬유)

  • Cho, Min-Su;Park, Hong-Kyu;Kim, Jeong-Hoi;Han, Heak-Wook
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.185-186
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    • 2006
  • Guided-wave propagation of sub-ps terahertz (THz) pulses in a highly birefringent plastic photonic crystal fiber has been experimentally demonstrated. The fabricated fibers have exhibited an extremely high birefringence of ${\sim}0.021$ at 0.3 THz.

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Terahertz Detection Characteristics of Low-Temperature Grown InGaAs/InAlAs Multi Quantum Well

  • Park, Dong-U;Han, Im-Sik;Kim, Chang-Su;No, Sam-Gyu;Ji, Yeong-Bin;Tae, In;Lee, Gi-Ju;Kim, Jin-Su;Kim, Jong-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.317-318
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    • 2013
  • Terahertz (THz) wave는 광학 영역과 방송파 영역 사이에 광대역 주파수 스펙트럼을 차지하고 있다. X선과는 달리 비이온화 광원으로 직진성, 투과성, 낮은 에너지 (meV)를 가지고 있어 비파괴적이고 무해한 장점을 지니고 있다. 본 연구에서는 In0.53Ga0.47As:Be/In0.52Al0.48As의 multi quantum well (MQW)을 Semi-insulting InP:Fe substrate 위에 active layer의 두께와 적층을 변화주어서 성장하였고Au (200 nm)/Ti (30 nm)의 금속전극으로 공정을 하였다. Ti:Sapphire femtosecond pulse laser를 조사하여 THz time-domain spectrometer 시스템을 이용하여 광전도검출법으로 THz 검출 특성을 연구하였다. THz 검출은 짧은 전하수명과 높은 저항을 요구한다. LTInGaAs의 경우 AsGa antisite로 인하여 짧은 전하수명을 얻게 되면 n-type의 높은 전하밀도를 가지게 되어서 저항이 낮아지게 된다. 높은 저항을 만들기 위하여 Be doping을 이용하여 과잉의 전자들을 보상하고 InAlAs layer를 삽입시켜 보다 높은 저항을 얻었다. LT-InGaAs:Be는 LT-GaAs보다 1/70 정도의 amplitude를 보이는데 LT-InGaAs/InAlAs MQW의 경우 LT-GaAs 대비 약 3/4 정도의 큰 amplitude를 얻었다. 또 active layer의 두께가 얇고 적층이 많을수록 신호가 커지는 것을 알 수 있었다. 이는 상대적으로 band gap이 큰 InAlAs층이 더 높은 저항을 만든 것으로 사료된다.

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Sixth-Generation Networks and Integrated Sensing and Communications (6G 통신에서의 센싱과 통신의 결합 서비스(ISAC))

  • D.M. Baek;T.Y. Kim
    • Electronics and Telecommunications Trends
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    • v.38 no.6
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    • pp.107-118
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    • 2023
  • Sixth-generation (6G) networks may allow to evolve from everything connected to everything sensed. Integrated sensing and communications (ISAC) requires the higher frequencies, wider bands, and more advanced antenna technology offered by 6G technology. We analyze advanced beamforming techniques to overcome the poor propagation characteristics of millimeter and terahertz waves as well as new waveforms designed to include sensing. This paper is intended to provide communication researchers with short summaries of ISAC, use cases, and standardization initiatives as guidelines for exploring new research and development directions.

Generation and Detection of Terahertz Waves Using Low-Temperature-Grown GaAs with an Annealing Process

  • Moon, Kiwon;Choi, Jeongyong;Shin, Jun-Hwan;Han, Sang-Pil;Ko, Hyunsung;Kim, Namje;Park, Jeong-Woo;Yoon, Young-Jong;Kang, Kwang-Yong;Ryu, Han-Cheol;Park, Kyung Hyun
    • ETRI Journal
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    • v.36 no.1
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    • pp.159-162
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    • 2014
  • In this letter, we present low-temperature grown GaAs (LTG-GaAs)-based photoconductive antennas for the generation and detection of terahertz (THz) waves. The growth of LTG-GaAs and the annealing temperatures are systematically discussed based on the material characteristics and the properties of THz emission and detection. The optimum annealing temperature depends on the growth temperature, which turns out to be $540^{\circ}C$ to $580^{\circ}C$ for the initial excess arsenic density of $2{\times}10^{19}/cm^3$ to $8{\times}10^{19}/cm^3$.

Channel Model and Wireless Link Performance Analysis for Short-Range Wireless Communication Applications in the Terahertz Frequency (테라헤르츠 대역 주파수에서 근거리 무선 통신 응용을 위한 채널 모델 및 무선 링크 성능 분석)

  • Chung, Tae-Jin
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.9
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    • pp.868-882
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    • 2009
  • In this paper, channel model and wireless link performance analysis for the short-range wireless communication system applications in the terahertz frequency which is currently interested in many countries will be described. In order to realize high data rates above 10 Gbps, the more wide bandwidths will be required than the currently available bandwidths of millimeter-wave frequencies, therefore, the carrier frequencies will be pushed to THz range to obtain larger bandwidths. From the THz atmospheric propagation characteristics based on ITU-R P.676-7, the available bandwidths were calculated to be 68, 48 and 45 GHz at the center frequencies of 220, 300 and 350 GHz, respectively. With these larger bandwidths, it was shown from the simulation that higher data rate above 10 Gbps can be achieved using lower order modulation schemes which have spectral efficiency of below 1. The indoor propagation delay spread characteristics were analyzed using a simplified PDP model with respect to building materials. The RMS delay spread was calculated to be 9.23 ns in a room size of $6\;m(L){\times}5\;m(W){\times}2.5\;m(H)$ for the concrete plaster with TE polarization, which is a similar result of below 10 ns from the Ray-Tracing simulation in the reference paper. The indoor wireless link performance analysis results showed that receiver sensitivity was $-56{\sim}-46\;dBm$ over bandwidth of $5{\sim}50\;GHz$ and antenna gain was calculated to be $26.6{\sim}31.6\;dBi$ at link distance of 10m under the BPSK modulation scheme. The maximum achievable data rates were estimated to be 30, 16 and 12 Gbps at the carrier frequencies of 220, 300 and 350 GHz, respectively, under the A WGN and LOS conditions, where it was assumed that the output power of the transmitter is -15 dBm and link distance of 1 m with BER of $10^{-12}$. If the output power of transmitter is increased, the more higher data rate can be achieved than the above results.

A Multi-Section Complex-Coupled DFB Laser with a Very Wide Range of Self-Pulsation Frequency and High Modulation Index (매우 넓은 영역의 Self-Pulsation 주파수와 높은 변조 지수를 가자는 다중 영역 복소 결합 DFB 레이저)

  • Kim, Boo-Gyoun;Kim, Tae-Young;Kim, Sang-Taek;Kim, Sun-Ho;Park, Kyung-Hyun
    • Korean Journal of Optics and Photonics
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    • v.17 no.2
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    • pp.191-197
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    • 2006
  • We analyze the self-pulsation(SP) characteristics due to mode beating of two modes emitted in a multi-section complex-coupled (CC) DFB laser composed of two DFB sections and a phase control section between them. SP frequency due to mode beating of the two modes is determined by the difference of grating periods in the two CC DFB regions. As the difference of grating periods in the two CC DFB regions increases, the SP frequency increases from very low frequency to the THz region. In the case of a mode which is not located in the stop band of the other DFB region, the mode propagates into the other DFB region without a high reflection, so that output powers emitted in a multi-section CC DFB laser have high modulation indexes due to the large interaction between the two modes.

20 GHz Pulse Sampling Oscilloscope Based on Electro-Optic Technique (광-전자파 기반 20 GHz급 펄스 샘플링 오실로스코프)

  • Lee, Dong-Joon;Kang, No-Weon;Lee, Joo-Gwang;Kang, Tae-Weon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.10
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    • pp.927-933
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    • 2011
  • This paper presents an optical sampling technique which can be used to overcome the limited bandwidth of a commercial electronic sampling oscilloscope for pulsed signal measurement. Employing an ultrafast laser with 0.1 ps pulse duration, 20 GHz electromagnetic pulses were generated through a fast photodiode. These pulses were transmitted through a microstrip line and sampled with an optically triggered electro-optic system. Two sampled 20 GHz pulses - measured independently over the transmission line with a non-contacting electro-optic method and conventional electronic one through a coaxial cable - were compared.

Resonant Folded Dipole Antennas for Continuous-Wave Terahertz Photomixer (연속파 테라헤르츠 포토믹수를 위한 폴디드 공진 안테나)

  • Moon, Kyung-Sik;Park, Hong-Kyu;Kim, Jeong-Hoi;Jung, Eun-A;Lee, Kyun-Gin;Han, Hae-Wook
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.181-182
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    • 2006
  • Photoconductive three-wire folded dipole antennas for terahertz photomixers have been developed. The folded antennas are characterized by a free space time-domain measurement technique, and the measured data are in good agreement with the simulation results. The folded dipole antennas have much higher antenna resistance than other resonant dipole antennas, implying that they can be used for higher output power of THz photomixers.

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Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications

  • Lee, Jae-Sung;Cho, Seong-Jae;Park, Byung-Gook;Harris, James S. Jr.;Kang, In-Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.2
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    • pp.230-239
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    • 2012
  • In this paper, we present the radio-frequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of $Y_{22}$-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.