JSTS:Journal of Semiconductor Technology and Science

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Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications

  • Lee, Jae-Sung (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Cho, Seong-Jae (Department of Electrical Engineering, Stanford University) ;
  • Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Harris, James S. Jr. (Department of Electrical Engineering, Stanford University) ;
  • Kang, In-Man (School of Electronics Engineering, Kyungpook National University)
  • Received : 2011.08.21
  • Published : 2012.06.30
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Abstract

In this paper, we present the radio-frequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of $Y_{22}$-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.

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References

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