• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.103-103
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• 2014

• ETRI Journal
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• v.23 no.3
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• pp.106-110
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• 2001

Subpicosecond all-optical switching method based on the simultaneous two-photon coherence exchange is proposed and numerically demonstrated. The optical switching mechanism is based on the optical field induced dark resonance swapping via nondegenerate four-wave mixing processes. For potential applications of ultrafast all-optical switching in fiber-optic communications, 10-THz channel number independent quantum router is discussed.

• Korean Journal of Optics and Photonics
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• v.31 no.1
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• pp.31-36
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• 2020

We propose a band-switchable terahertz metamaterial based on an etched vanadium dioxide (VO₂) thin film. A line of etched VO₂ thin film was placed in the center gap of the split square-loop shape for the tunability of the metamaterial. The resonance frequency of the metamaterial can be switched from the 1.4 THz band to the 0.7 THz band, according to the insulator-metal phase transition in the VO₂ thin film. The absolute difference in the transmittance of the metamaterial was 78.5% and 65.8% at 0.7 THz and 1.4 THz respectively, according to the band switching. The differential phase shift was around 90°, and the transmittance was stably maintained between 40% and 60% in the middle band of the two switchable resonance-frequency bands.

• Current Optics and Photonics
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• v.6 no.3
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• pp.252-259
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• 2022

In this paper, a dual-function dynamically tunable metamaterial absorber is proposed. At frequency points of 1.545 THz and 3.21 THz, two resonance peaks with absorption amplitude of 93.8% (peak I) and 99.4% (peak II) can be achieved. By regulating the conductivity of photosensitive silicon with a pump laser, the resonance frequency of peak I switches to 1.525 THz, and that of peak II switches to 2.79 THz. By adjusting the incident polarization angle by rotating the device, absorption amplitude tuning is obtained. By introducing two degrees of regulation freedom, the absorption amplitude modulation and resonant frequency switching are simultaneously realized. More importantly, dynamic and continuous adjustment of the absorption amplitude is obtained at a fixed resonant frequency, and the modulation depth reaches 100% for both peaks. In addition, the sensing property of the proposed MMA was studied while it was used as a refractive index sensor. Compared with other results reported, our device not only has a dual-function tunable characteristic and the highest modulation depth, but also simultaneously possesses fine sensing performance.

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.158-165
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• 2010

This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.10
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• pp.5035-5057
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• 2019

Advancements in nanotechnology and novel nano materials in the past decade have provided a set of tools that can be used to design and manufacture integrated nano devices, which are capable of performing sensing, computing, data storing and actuation. In this paper, we have proposed cooperative nano communication using Power Switching Relay (PSR) Wireless Power Transfer (WPT) protocol and Time Switching Relay (TSR) WPT protocol over independent identically distributed (i.i.d.) Rayleigh fading channels in the Terahertz (THz) Gap frequency band to increase the range of transmission. Outage Probability (OP) performances for the proposed cooperative nano communication networks have been evaluated for the following scenarios: A) A single decode-and-forward (DF) relay for PSR protocol and TSR protocol, B) DF multi-relay network with best relay selection (BRS) for PSR protocol and TSR protocol, and C) DF multi-relay network with multiple DF hops with BRS for PSR protocol and TSR protocol. The results have shown that the transmission distance can be improved significantly by employing DF relays with WPT. They have also shown that by increasing the number of hops in a relay the OP performance is only marginally degraded. The analytical results have been verified by Monte-Carlo simulations.

• Carbon letters
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• v.21
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• pp.8-15
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• 2017

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).