• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.745-750
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• 2017

Terahertz time-domain spectroscopy has been used to study the optical properties of $Pr^{3+}-doped$ selenide glasses. The complex refractive indexes of $Pr^{3+}-selenide$ glasses were measured in a frequency range from 0.3 to 1.5 THz. The real and imaginary refractive indexes increased with increasing frequency and $Pr^{3+}$ ion concentration. The obtained result indicated that the phonon modes of the $Pr^{3+}-doped$ selenide glasses shift to lower frequencies with the concentration of $Pr^{3+}$ ions. The theory of far-infrared absorption in amorphous materials was used to analyze the results. The measured data showed that the disorder-induced terahertz absorption increased with increasing $Pr^{3+}$ ion concentration.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.560-565
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• 2015

We report efficient direct coupling of THz dipole antenna pulses onto air spaced two-wire transmission lines and Teflon covered two-wire lines. The air spaced two-wire lines show TEM mode propagation with very small group velocity dispersion (GVD) and relatively low attenuation. The Teflon covered two-wire lines showed comparatively much higher attenuation and GVD. However, the Teflon covered two-wire lines show a very good guiding property when the lines are curved. Although the lines are circled only 5.0 cm in diameter, there is no additional attenuation compared to straight the lines.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.15-17
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• 2019

We present terahertz optical properties of $GdBa_2Cu_3O_{7-x}$ (GdBCO) superconducting thin films. GdBCO films with a thickness of about 105 nm were grown on a $LaAlO_3$ (LAO) single crystal substrate using a conventional pulsed laser deposition (PLD) technique. Using an Ar ion milling system, the thickness of the GdBCO film was reduced to 58 nm, and its surface was also smoothened. Terahertz (THz) transmission spectra through two different GdBCO films are measured over the range between 0.2 and 1.5 THz using THz time domain spectroscopy. Interestingly, the THz transmission of the thinner GdBCO film has been increased to six times larger than that of the thicker one, while the thinner film is still maintaining its superconducting property at below 90 K.

• Current Optics and Photonics
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• v.6 no.3
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• pp.252-259
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• 2022

In this paper, a dual-function dynamically tunable metamaterial absorber is proposed. At frequency points of 1.545 THz and 3.21 THz, two resonance peaks with absorption amplitude of 93.8% (peak I) and 99.4% (peak II) can be achieved. By regulating the conductivity of photosensitive silicon with a pump laser, the resonance frequency of peak I switches to 1.525 THz, and that of peak II switches to 2.79 THz. By adjusting the incident polarization angle by rotating the device, absorption amplitude tuning is obtained. By introducing two degrees of regulation freedom, the absorption amplitude modulation and resonant frequency switching are simultaneously realized. More importantly, dynamic and continuous adjustment of the absorption amplitude is obtained at a fixed resonant frequency, and the modulation depth reaches 100% for both peaks. In addition, the sensing property of the proposed MMA was studied while it was used as a refractive index sensor. Compared with other results reported, our device not only has a dual-function tunable characteristic and the highest modulation depth, but also simultaneously possesses fine sensing performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.