• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.335-339
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• 2018

The optical characteristics of a terahertz (THz) antenna-coupled bolometer (ACB) detector were evaluated using a pulsed quantum cascade laser (QCL) and radiation blackbody sources. We investigated a method for measuring the responsivity and noise-equivalent power (NEP) of the THz detector using two different types of light sources. When using a QCL source with a frequency of 3 THz, the average responsivity of 24 devices was $1.44{\times}10^3V/W$ and the average NEP of those devices was $3.33{\times}10^{-9}W/{\surd}Hz$. The average responsivity and NEP as measured by blackbody source were $1.79{\times}10^5V/W$ and $6.51{\times}10^{-11}W/{\surd}Hz$, respectively, with the measured values varying depending on the light source. This was because the output power of each light source was different, with the laser source being driven by a pulse type wave and the blackbody source being driven by a continuous wave. The power input to the THz sensor was also different. Futhermore, the responsivity and NEP values measured using band pass filter (BPF) were similar to those measured when using only THz windows. It was found that ACB sensor responds normally in the THz region to both the laser and the blackbody source, and the method was confirmed to effectively evaluate the characteristics of the THz sensor.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.517-518
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• 2006

Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.300.2-300.2
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• 2014

테라헤르쯔(terahertz : THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지(meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한(low-temperature grown : LT) InGaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 LT-InGaAs:Be/InAlAs multi quantum well (MQW)를 well과 barrier를 가각 $10{\mu}m$ 씩 100주기 성장을 하였고 Ti와 Au를 각각 30, $200{\mu}m$로 dipole antenna를 제작 하였다. 이 때 Ti:sapphire femto-pulse laser (30 fs/90 MHz)를 excitation source로 사용하였을 때 9000 pA로 LT-InGaAs epilayer (180 pA)보다 50배 이상 큰 전류 신호를 얻을 수 있었다. THz 발생과 검출을 초소형, 초경량, 고효율로 하기 위해서는 fiber-optic를 이용해야 하는데 이때 분산과 산란 손실이 가장 적은 1550 nm 대역에서 많은 연구가 이루어 졌다. 780, 1560 nm의 mode-locking laser (90 fs/100 MHz)를 사용하여 현재 많이 이용되고 있는 Ti:sapphire femto-pulse laser와 비교하여 THz 특성 변화를 확인하는 연구를 진행 하고 있다.

• Journal of Communications and Networks
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• v.15 no.6
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• pp.559-568
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• 2013

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cut-off frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a uni-travelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-data-rate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.

• Korean Journal of Optics and Photonics
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• v.35 no.5
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• pp.218-227
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• 2024

The tabletop-scale terahertz (THz) light sources using femtosecond laser pulses are primarily based on spatiotemporal changes in electron charge. This review introduces a new scheme where the spin angular momentum of electrons contributes to THz wave generation. By focusing on laser-induced spin current generation in ferromagnets, we review the outstanding characteristics observed in nanometric ferromagnetic/nonmagnetic thin films, including high power, ultra-broadband, and polarization tunability. Additionally, research on various application technologies is introduced, including the development of devices combining semiconductors, large-area THz devices, and flexible THz devices, all based on nanoscale thin films. Through this, the principle of spintronic THz emission can be understood, contributing the advancement of various application studies utilizing electron spin as a next-generation THz optical device.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.205-205
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• 2013

테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.576-580
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• 2013

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.

• Current Optics and Photonics
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• v.4 no.4
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• pp.373-379
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• 2020

In this study, we investigate terahertz (THz) generation by a photoconductive antenna with electrodes in the shape of split-ring resonators. According to our theoretical investigation based on a lumped-circuit model, the inductance of this electrode structure leads to resonant behavior of the photo-induced current. Hence, near the resonance frequency the spectral components generated by a resonant photoconductive antenna can be greater than those produced by a non-resonant one. For experimental verification, a resonant photoconductive antenna, which possesses a resonance mode at 0.6 THz, and a non-resonant photoconductive antenna with stripe-shaped electrodes were fabricated on a semi-insulating GaAs substrate. The THz generation by both of the photoconductive antennas demonstrated a good agreement with the theoretically expected results. The observed relationship between the resonant electrodes of the photoconductive antenna and the generated THz spectrum can be further employed to design a narrow-band THz source with an on-demand frequency.

• Current Optics and Photonics
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• v.1 no.5
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• pp.544-550
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• 2017

This simulation based study reports a novel tunable, compact, room temperature terahertz (THz) transistor source, operated on the concept of charge plasma oscillation with the capability of radiating within a terahertz gap. A vertical cavity with a quasi-periodic distributed-Bragg-reflector has been attached to a THz plasma wave transistor to achieve a monochromatic coherent surface emission for single as well as multi-color operation. The resonance frequency has been tuned from 0.5 to 1.5 THz with the variable quality factor of the optical cavity from 5 to 290 and slope efficiency maximized to 11. The proposed surface emitting terahertz transistor is able to satisfy the demand for compact solid state terahertz sources in the field of teratronics. The proposed device can be integrated with Si CMOS technology and has opened the way towards the development of silicon photonics.

• ETRI Journal
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• v.38 no.4
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• pp.665-674
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• 2016

We designed and fabricated a semiconductor optical amplifier-integrated dual-mode laser (SOA-DML) as a compact and widely tunable continuous-wave terahertz (CW THz) beat source, and a pin-photodiode (pin-PD) integrated with a log-periodic planar antenna as a CW THz emitter. The SOA-DML chip consists of two distributed feedback lasers, a phase section for a tunable beat source, an amplifier, and a tapered spot-size converter for high output power and fiber-coupling efficiency. The SOA-DML module exhibits an output power of more than 15 dBm and clear four-wave mixing throughout the entire tuning range. Using integrated micro-heaters, we were able to tune the optical beat frequency from 380 GHz to 1,120 GHz. In addition, the effect of benzocyclobutene polymer in the antenna design of a pin-PD was considered. Furthermore, a dual active photodiode (PD) for high output power was designed, resulting in a 1.7-fold increase in efficiency compared with a single active PD at 220 GHz. Finally, herein we successfully show the feasibility of the CW THz system by demonstrating THz frequency-domain spectroscopy of an ${\alpha}$-lactose pellet using the modularized SOA-DML and a PD emitter.