• Title/Summary/Keyword: THz

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A Study on the Recycling of Radioactively Contaminated Metal Waste (방사성오염 금속폐기물의 재활용 연구)

  • 문제권;박상윤;정종헌;이정원;오원진
    • Resources Recycling
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    • v.6 no.3
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    • pp.22-27
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    • 1997
  • Recycling of radioactively contaminated metal wasles is very attractive to reduce thc final disposal volumc of the radioactive wastes, thereby maximizing the usage of nahrral rzsuunts and minimizmg the detrimental effects of thz rzdioaclive wastes on the environment. In the recycling process, many complicated processes arc involved. Among those processes the 'surface contamination removal techniques such as physical, chemical and electrochern~calm ethods are the most critical and Ircquently applied in accordance with the contamination characteristics and the chemical compositions of the metal wastes. In this sludy, the sulfuric acid-cerium method and electmchemical methods were applied lu removc the conatiminated suhce. The results showed the surface contaminalion could he lowered to the background levcl by lhasc mclhods.

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Accurate Equation Analysis for RF Negative Resistance circuit at High Frequency Operation Range (고주파수 영역의 정확도 높은 RF 부성저항 회로 분석)

  • Yun, Eun-Seung;Hong, Jong-Phil
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.4
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    • pp.88-95
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    • 2015
  • This paper presents a new analysis of RF negative resistance (RFNR) circuits, known as a negative resistance generator. For accurate equation analysis of RFNR, this study examined the effects of the gate resistance and the source parasitic capacitance of the transistor. In addition, the input admittance of the conventional equation was calculated by looking into the source-terminal of the transistor, whereas that of the proposed equation was calculated by examining the gate-terminal of the transistor. The proposed equation analysis is more accurate than that of the conventional analysis, especially for higher frequency range. This paper verify the accuracy of the proposed analysis at high frequency range using the simulation.

The generation and detection of binary signals by narrow terahertz dipole antenna (좁은 간격의 테라헤르츠 다이폴 안테나를 이용한 이진신호의 발생과 검출)

  • 전태인;김근주
    • Korean Journal of Optics and Photonics
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    • v.13 no.5
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    • pp.430-434
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    • 2002
  • We present the magnitude of terahertz electromagnetic pulses when femtosecond laser pulses are moving along to a dipole antenna. The dipole antenna chip has maximum 4.7 nA THz current, generated at 11 DC volt. This current is 3.4 times bigger than the current of a $300{\mu}{\textrm}{m}$ separated transmission line structure chip that has 70 DC volt. We also apply an AC square wave voltage to the dipole antenna from 0.1 volt to 10 volt for binary signals using the terahertz electromagnetic pulses.

Terahertz Complex Refractive Index and Guiding of White Staghorn Coral

  • Kang, Chul;Kim, Myunghwan;Kim, Hyeongmun;Park, Jin Young;Kim, Bok Hyeon;Maeng, Inhee;Choi, SooBong;Kim, Soeun;Kee, Chul-Sik
    • Current Optics and Photonics
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    • v.5 no.4
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    • pp.370-374
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    • 2021
  • Corals are the remains of animals that grow on warm beaches. They have been used as decorative jewels because of their variety of colors, and as medicinal materials for treating cancers, AIDS, and other therapeutic uses because of their chemical elements. Corals are mainly composed of calcium carbonate (CaCO3) and have many air pores, tens to hundreds of micrometers in size. The refractive indices and absorption coefficients of dried sliced staghorn corals are investigated using terahertz time-domain spectroscopy. The measured values are similar to those for CaCO3, as expected. It is observed that a sample with a microstructure formed by air pores can guide terahertz waves. The dispersion, effective index, and loss of the guiding modes of coral core surrounded by five triangular air pores are numerically calculated. The simulated spatial distribution of the electric field of the guide mode at 1.25 THz shows the mode to be tightly confined to the core.

Terahertz Characteristics of D2O and H2O Mixtures (테라헤르츠 분광학을 이용한 중수(D2O)와 경수(H2O) 혼합물의 특성연구)

  • Chong, Joong-Gun;Son, Joo-Hiuk
    • Korean Journal of Optics and Photonics
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    • v.19 no.6
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    • pp.435-438
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    • 2008
  • D2O, which is used in nuclear power generation, is slightly different from $H_2O$. $D_2O$ consists of deuterium (D), which is an isotope of hydrogen (H) and has one more neutron than H. $D_2O$ is heavier by about 11% than $H_2O$, and $D_2O$ is present in water in natureat about 0.002%. Its melting point and boiling point are $3.81^{\circ}C$ and $101.42^{\circ}C$, respectively. $D_2O$ is harmful to the human body if it replaces water in the human body by more than $25%{\sim}50%$. We have measured the index of refractive and power absorption of 0%, 25%, 50%, 75%, and 100% of $D_2O$ in $H_2O$ using terahertz time-domain spectroscopy, and we have found that the refractive index decreases and power absorption also decreases as the concentration of $D_2O$ increases.

Snapshot of carrier dynamics from amorphous phase to crystal phase in Sb2Te3 thin film

  • Choi, Hyejin;Jung, Seonghoon;Ahn, Min;Yang, Won Jun;Han, Jeong Hwa;Jung, Hoon;Jeong, Kwangho;Park, Jaehun;Cho, Mann-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.139.2-139.2
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    • 2016
  • Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

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20 GHz Pulse Sampling Oscilloscope Based on Electro-Optic Technique (광-전자파 기반 20 GHz급 펄스 샘플링 오실로스코프)

  • Lee, Dong-Joon;Kang, No-Weon;Lee, Joo-Gwang;Kang, Tae-Weon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.10
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    • pp.927-933
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    • 2011
  • This paper presents an optical sampling technique which can be used to overcome the limited bandwidth of a commercial electronic sampling oscilloscope for pulsed signal measurement. Employing an ultrafast laser with 0.1 ps pulse duration, 20 GHz electromagnetic pulses were generated through a fast photodiode. These pulses were transmitted through a microstrip line and sampled with an optically triggered electro-optic system. Two sampled 20 GHz pulses - measured independently over the transmission line with a non-contacting electro-optic method and conventional electronic one through a coaxial cable - were compared.

Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime

  • Yu, Eunseon;Son, Baegmo;Kam, Byungmin;Joh, Yong Sang;Park, Sangjoon;Lee, Won-Jun;Jung, Jongwan;Cho, Seongjae
    • ETRI Journal
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    • v.41 no.6
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    • pp.829-837
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    • 2019
  • The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (Lg) by examining a set of primary DC and AC parameters. The cutoff frequency (fT) and maximum oscillation frequency (fmax) of the proposed device were determined to be 440.0 and 753.9 GHz when Lg is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

Characterization of Hot Electron Transistors Using Graphene at Base (그래핀을 베이스로 사용한 열전자 트랜지스터의 특성)

  • Lee, Hyung Gyoo;Kim, Sung Jin;Kang, Il-Suk;Lee, Gi Sung;Kim, Ki Nam;Koh, Jin Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.3
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    • pp.147-151
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    • 2016
  • Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

Study of Noncontact Condition Diagnosis on Painting with Terahertz Waves (테라헤르츠파를 이용한 회화문화재 상태진단 적용연구)

  • Baek, Na Yeon;Kang, Dai Ill;Ha, Tae Woo;Sim, Kyung Ik;Lee, Ho Won;Kim, Jae Hoon;Lee, Han Hyoung
    • Journal of Conservation Science
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    • v.32 no.2
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    • pp.235-247
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    • 2016
  • Conventional imaging techniques such as ultraviolet, infrared, and X-ray are used mainly to diagnose the damaged parts of the painted cultural assets in Korea. These techniques, however, have limits in diagnosing damages of interlayer parts. We have performed and extensive study on the applicability of Terahertz(THz) analysis technique, introduced recently to this field of study on cultural properties in Korea, to diagnose painted cultural assets. The specimens, produced to imitate the damage types of Korean painted properties, were analyzed over their painting, supporting, and backing layers by terahertz pulse imaging technique. The analyzed results provided information about the cracks, the separated areas, and the separated distances between layers on the specimens. Our research, then, was extended to real painted cultural remains, Birojana Sam-shin Gwebul-do at Bongseon Temple in Namyang-ju, Korea National Treasure Number 1792, through which we have obtained 3D information about the extent and pattern of damages to the asset. These results demonstrate that terahertz 3D imaging technique has the capability of noncontact 3D diagnosis on painted cultural properties.