• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.3
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• pp.1319-1326
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• 2011

We have investigated the characteristics of the electron beam (e-beam) in the miniaturized free electron laser module by using the commercial 3D simulation tool OPERA. The e-beam was made parallel before entering the slit-type wiggler by the negative bias applied to the central electrode of the electron lens. With respect to the different structures of the wiggler, we obtained the inner distributions of the electrical potential and the electric field, which was, in turn, used to calculate the trajectory of the e-beam in the wiggler.

• Information and Communications Magazine
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• v.26 no.1
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• pp.25-30
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• 2009

IT산업은 '97년 외환위기를 기점으로 고성장을 거듭하였고, 세계 10위권 규모의 경제 강국으로 성장하는데 있어 국내 산업의 대표적인 성장동력으로서 자리 매김하였다. 하지만, 최근 성장률이 예전만 못하다는 우려의 목소리와 함께 IT가 한 단계 더 업그레이드하기 위해서는 자신의 허물을 과감히 벗는 용기가 필요하다는 것이 일반적인 시각이다. 이러한 흐름속에서 기존 IT전략과 차별화된 New IT 발전방안을 수립하게 되었다. 지금까지의 IT전략이 IT 고도화 추진을 위한 IT 중심 발전 전략이었다면, New IT전략은 IT기반 융합산업, IT융합 신산업, Next IT산업 등3대 성장축간 시너지 창출이 가능한 IT로의 수렴과 확산이 핵심이라고 할 수 있다. IT기반 융합산업의 최종 목표는 전통산업과 IT가 만나 자동차, 조선, 의료, 국방, 건설, 섬유, 기계항공 등 7개 주력기간산업의 고부가가치화 및 초일류화를 우선 실현하는 것이다. IT융합 신산업의 최종 목표는 나노(NT), 바이오(BT), 인지기술(CT) 등 비(非)IT와 교감을 통하여 IT가 에너지, 환경, 건강 등 사회적 문제를 해결하고, 녹색성장 추진의 핵심인 5대 신산업을 창출하는데 있다. 5대 신산업으로는 Green IT산업, Welfare-Infra산업, 감성조명산업, 인지단말산업, THz응용산업 등을 꼽을 수 있다. Next IT산업은 기존 14대 IT 분야를 'ETRI 비전 2020' 등 미래 청사진을 바탕으로 장기적 관점에서 재설계한 것이며, 최종 목표는 TDX, 4M D램, CDMA, 와이브로, DMB, NoLA 등 IT 강국 계보를 이어갈 4G, 미래인터넷, Smart Radio, 실감미디어, 웹3.0, 투명전자소자 등 미래 유망 핵심원천기술을 확보하고, IT 경쟁력을 강화하는 것이다.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.46-50
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• 2004

Images were acquired by the modulation of terahertz electromagnetic signals and compared by modulation frequencies. For the real-time acquisition of images a fast scanning method has been adopted utilizing a galvanometer. The acquired time domain waveforms were transformed into frequency domain data by fast Fourier transformations (FFT). We chose some frequency components to compare the resolution of images. The beam profiles at the focal position were measured by a knife-edge technique. Beam diameter was shown to decrease as the frequency increased. By scanning one- and two-dimensional samples a significant image enhancement was observed with the frequency increment. A nondesouctive imaging system using ㎔ electromagnetic pulses was also demonstrated.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.100-105
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• 1994

We have reduced the oscillating linewidth of the commercial single mode InGaAsP visible laser diodes which emits in the 657 nm region of the spectrum down to 10 MHz by making a extended cavity employing the Littrow-type grating. The wavelength tuning characteristics of the commercial visible laser diode (CQL820D, Philips Co.) for the grating angle, laser temperature, and injection currents were measured by using the wavemeter. The proportional coefficients of the laser were found to be 1 THzlmrad, 32.4 GHz/K, and 6.14 GHz/mA, respectively.tively.

• Journal of Electrical Engineering and Technology
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• v.3 no.4
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• pp.566-570
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• 2008

Vertical nanowire SGFETs(Surrounding Gate Field Effect Transistors) provide full gate control over the channel to eliminate short channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10nm channel length and a 2nm channel radius. The amplifier dissipates $5{\mu}W$ power and provides 5THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5V, and a distortion better than 3% from a 1.8V power supply and a 20aF capacitive load. The 2nd and 3rd order harmonic distortions of the amplifier are -40dBm and -52dBm, respectively, and the 3rd order intermodulation is -24dBm for a two-tone input signal with 10mV amplitude and 10GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high speed analog and VLSI technologies.

• The Bulletin of The Korean Astronomical Society
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• v.38 no.1
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• pp.73.1-73.1
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• 2013

전파자료처리를 위한 전파분광기는 전파망원경으로 얻어진 우주전파자료를 최종 처리하는 장비이다. 현재, 전파관측에서는 우주의 미세구조를 밝혀내기 위해 관측자료의 대량화와 고속화가 진행되고 있는데, 이러한 초고속 대용량 자료를 처리하기 위해서 FPGA나 ASIC 등으로 구성된 하드웨어 기반의 전파분광기를 주로 사용하고 있다. 그러나, 하드웨어 기반의 전파분광기는 개발에 시일이 많이 소요되고 고가이며 수정 변경이 쉽지 않다. 한편, 관측자료는 더 대량화되고 고속처리가 필요한 추세로 가고 있다. 이러한 한계를 극복할 수 있는 방법 중 하나가 고속 계산 플랫폼을 기반으로 구현되는 소프트웨어 전파분광기이다. 미국, EU, 일본 등은 이러한 전파분광기 개발을 이미 진행하고 있다. 특히, THz 대역에서 관측시스템 개발을 이제 막 시작하는 우리나라로서는 경쟁력을 갖추려면 외국의 기술의존성을 탈피하고 첨단의 초고속 관측자료처리 기술을 확보해야 한다. 이를 위해 국내의 우수한 IT기술을 전파관측기술에 활용하여 단계적으로 기술을 발전시킬 필요가 있다. 본 연구는 고속 계산 플랫폼을 기반으로 구현되는 소프트웨어 광대역 전파분광기의 기술개발에 관한 것으로 전파관측에 적용할 수 있는 x-엔진 개발과 기술 결합에 중점을 두고자 한다. 이에 소프트웨어 광대역 전파분광기의 기본 설계 및 향후 계획을 소개한다.

• Carbon letters
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• v.21
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• pp.8-15
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• 2017

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).

• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.75-78
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• 2015

A growing body of evidence has been supporting the existence of so-called "dark molecular gas" (DMG), which is invisible in the most common tracer of molecular gas, i.e., CO rotational emission. DMG is believed to be the main gas component of the intermediate extinction region from Av~0.05-2, roughly corresponding to the self-shielding threshold of $H_2$ and $^{13}CO$. To quantify DMG relative to $H{\small{I}}$ and CO, we are pursuing three observational techniques; $H{\small{I}}$ self-absorption, OH absorption, and THz $C^+$ emission. In this paper, we focus on preliminary results from a CO and OH absorption survey of DMG candidates. Our analysis shows that the OH excitation temperature is close to that of the Galactic continuum background and that OH is a good DMG tracer co-existing with molecular hydrogen in regions without CO. Through systematic "absorption mapping" by the Square Kilometer Array (SKA) and ALMA, we will have unprecedented, comprehensive knowledge of the ISM components including DMG in terms of their temperature and density, which will impact our understanding of galaxy evolution and star formation profoundly.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1607-1613
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• 2008

We investigated the miniaturized free electron laser(FEL) module based on microcolumn. The miniaturized FEL is composed of two parts: electron generation part and radiation emission part. The radiation emission part, called wiggler, consists of a grid plate. While the electrons are passing through the wiggler, electron trajectory shows sinusoidal curve caused by the periodically applied voltage on the grid, and then it give rise to radiation emission. We analyzed the wiggler parameters, grid width, depth, period, applied voltage and the pair wiggler space using 2-D simulation tool.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.28-28
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• 2007

Ferroelectric $(Ba_{0.5}Sr_{0.5})TiO_3$ (BST) thin films of thickness 500nm were deposited on $LaAlO_3$, (LAO) substrates by at $800^{\circ}C$. BST films were characterized for structure using X-ray diffraction (XRD). The surface morphology and thickness of BST the films were characterized by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM). We measured the dielectric properties at microwave frequencies (1~3 GHz) using a symmetrical stripline resonator with shorted ends and terahertz frequencies (0.2~2.5 THz) using a time-domain terahertz spectroscopy. The real and imaginary parts of the complex dielectric constant of the BST thin films on LAO substrates were in agreement with those previously reported.