• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.96-99
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• 1993

Electrical properties of the Thin Film Transistor(TFT) electrode metal films were investigated through the Test Elements Group(TEG) experiment. The main purpose of this investigation was to characterize the electrical resistance properties of patterned metal films with respect to the variations of film thickness and TEG metal line width. Aluminum(Al), Tantalum(Ta) and Chromium(Cr) that are currently used as TFT electrode films were selected as the probed metal films. To date, no work in the electrical characterizations of patterned electrodes of a-Si TFT was accomplished. Bulk resistance$(R_b)$, sheet resistance$(R_s)$, and resistivities($\rho$) of TEG patterned metal lines were obtained. Electrical continuity test of metal film lines was also performed in order to investigate the stability of metallization process. Almost uniform-linear variations of the electrical properties with respect to the metal line displacements was also observed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.98-106
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• 2009

This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

• Information Display
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• v.5 no.5
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• pp.4-9
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• 2004

최근 비오이 하이디스에서는 무제한의 광시야각과 시야각에 따른 색변화가 최소화된 선명한 색 특성을 갖는 Advanced FFS(Fringe Field Switching) 기술을 개발하였다. 이 기술은 resin 기술적용(평탄화에 의한 고개구율)없이 종래의 FFS 기술에서 액정의 전기 광특성을 최적화하는 새로운 디자인 룰을 찾아내어 실현하였다. 진보된 화소 개념은 전극의 모서리 구조, 전극 간격/폭, 칼라 필터의 블랙 마트릭스(BM)와 전극 간격등의 key parameters들의 최적화에 의해 달성되었고 액정 셀 내의 모서리와 전기장등이 액정을 미세하게 조정할 수 있도록 있게 된 것이다. 이러한 진보된 설계 개념은 모든 FFS 제품에 반영되어 개발되었다. 뿐만 아니라 12.1" XGA 제품에서 투과율이 22% 증가하고 흑백 대비비(Contrast Ratio)는 33% 증가한 600 : 1의 세계 최고 사양을 갖는 제품을 개발하게 되었다. 특히 태블릿과 노트북용 TFT- LCD 모듈에서 단일 도메인(Single Domain) 모드로도 White상태에서 시야각에 따른 색변화가 0.02 이하의 특성을 갖고 180도/180도의 무제한 시야각을 갖고 있다. Advanced FFS 기술의 브랜드 이름과 슬로건으로 'Viewiz'와 'Vision Magic'을 정하여 마케팅 중이며 세계적인 Top Tier 고객에 제품을 판매 중이고, 2004년 3분기에는 태블릿 시장에서 점유율 70%로 1위를 차지하였다.

• 한국HCI학회:학술대회논문집
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• 2008.02a
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• pp.135-140
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• 2008

최근 관련 기술의 발전과 디지털 컨버전스의 가속화로 모바일 제품이 소형화, 다기능화 되어 가고 있다. 이러한 경향에 따라, 다양한 기능을 지원하기 위한 높은 사양의 디스플레이가 요구되고 있으며, 많은 업체들이 고화질, 고해상도 디스플레이의 개발에 경쟁적으로 매진하고 있다. 그러나 사용자의 인지적 특성을 고려하지 않은 고해상도 경쟁은 생산비용만 높이는 결과를 초래할 수 있다. 본 연구는 디스플레이의 설계 요소별 선호도를 분석하고, 사람이 탐지할 수 있는 두 자극 간의 최소한의 차이역(difference threshold)인 JND(Just Noticeable Difference)을 활용하여, 설계 요소의 인지적 특성을 파악하는 것을 목적으로 한다. 이를 위하여 모바일 제품에 주로 사용되는 TFT-LCD 를 평가 대상으로, 30 명의 피실험자를 대상으로 JND 측정실험을 수행하였으며, 실험결과를 바탕으로 디스플레이에 대한 주요 설계변수들의 특성을 파악하였다. 이 연구결과는 사용자의 선호도를 고려한 모바일 제품의 디스플레이 설계지침으로 활용될 수 있을 것이다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.101-104
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• 2008

Too high stress of the bottom Mo layer of the gate line is thought to be the main reason for H-line mura. H-Line mura is eliminated effectively by changing the gate line metal structure from Mo/AlNd/Mo to AlNd/Mo. The new structure does not influence the panel's electrical characteristics.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.51-55
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• 2004

In the design stage of high precision manufacturing/inspection FAB facilities, it is necessary to investigate the allowable vibration limits of high precision equipments and to study structural dynamic characteristics of C/R and Sub-structure in order to provide structural vibration criteria to satisfy these allowable limits. The goal of this study is to investigate the dynamic characteristics of PC-Type mock-up structures designed for next generation TFT-LCD FAB through experiments and analysis procedures. Therefore, in order to provide a proper dynamic structural design for high precision manufacturing/inspection work process, these allowable limits must be satisfied.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.101-105
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• 2011

In case of high-tech process industries such as semiconductor and TFT-LCD manufactures, fault of a virtually finished product that is value-added one, since it has gone throughout the most of processes, may give rise to quality cost nearly amount to its selling price and can be a main cause that decreases the efficiency of manufacturing process. This paper proposes a real-time dispatching algorithm for semiconductor manufacturing process with rework. In order to evaluate the proposed algorithm, this paper examines the performance of the proposed method by comparing it with that of the existing dispatching algorithms, based on various experimental data.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1625-1628
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• 2006

Two different negative-type photosensitive polyimides were synthesized and characterized for an application as an interdielectric layer in TFTLCD array. In the case of photocurable polyimides, the photosensitive moiety, 2-HHSP, was synthesized through 3 step reaction, and then was incorporated into side chains of polyimide precursor by post reaction. Optimum compositions of negative-type photocurable polyimde were also formulated. For photopolymerizable polyimides, two novel UV monomers containing imide linkages were prepared. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that viaholes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1945-1947
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• 2004

"CRT" which had dominated the market of display until 2000 is not appropriate for information indicating media due to several limitations. Thus, TFT-LCD, PDP, OLED, etc are growing in display industry instead of CRT because they meet demands of information indicating media. OLED display which responses within 1ms fits any picture manifestation medias because it uses self radiance OLED for picture clement that has no obstacles in showing the angle of vision. OLED's characteristic of action is very sensitive to thickness of electrode so that this has been an important issue. This study tried to find the most suitable thickness of electrode using ITO, Mo, and AL. Using the results of IVL measurements, analyzed equality of electrode board. As a result, found the thickness of electrode that has high electrical efficiency and optimized it.