• Laser Solutions
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• v.15 no.1
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• pp.6-9
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• 2012

In TFT-LCD manufacturing process, various defects are generated by manufacturing machine trouble or particle. These defects can be repaired through the TFT-Laser repair process that only can't be automated in TFT-LCD manufacturing Process. In this Paper, we propose auto defect algorithm for TFT-LCD laser repair machine using image processing algorithm in order to automate process. Proposed algorithm can detect very small defects (< 2um) in 98% success ratio, and generated laser repair path guarantee highly precise position accuracy. Through proposed system, much of the work still done the old-fashioned way, by hand, can be automated and manufacturing company can be strengthed the competitiveness of cost.

• Journal of Korean Institute of Industrial Engineers
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• v.39 no.2
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• pp.82-89
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• 2013

Novelty detection (ND) is an effective technique that can be used to determine whether a future observation is normal or not. In the present study we propose a novelty detection algorithm that can handle a situation where the distributions of target (normal) observations are inhomogeneous. A simulation study and a real case with the TFT-LCD process demonstrated the effectiveness and usefulness of the proposed algorithm.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.5
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• pp.444-452
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• 2008

This paper presents an overall image processing approach of defect inspection of patterned TFT-LCD panels for the real manufacturing process. A prototype of AOI(Automatic Optical Inspection) system which is composed of air floating stage and multi line scan cameras is developed. Adjacent pattern comparison algorithm is enhanced and used for pattern elimination to extract defects in the patterned image of TFT-LCD panels. New region merging algorithm which is based on border expansion is proposed to identify defects from the pattern eliminated defect image. Experimental results show that a developed AOI system has acceptable performance and the proposed algorithm reduces environmental effects and processing time effectively for applying to the real manufacturing process.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.51-54
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• 2007

Top-emission 3.5 inch qVGA IOD (Inverted AMOLED) was fabricated with inverted EL structure driven by a-Si TFT backplane. In order to get stable driving TFT, we used FCP(Field Control Plate) layer which was connected with the source of the driving TFT. And we developed planarization process to planarize the cathode layer which was the bottom layer of inverted OLED. Our unique IOD structure is “a-Si TFT/ Al(Cathode)/ LiF/ LG-201(ETL)/ EML(RGB)/ HTL/ LG-101(HIL & Buffer layer)/ IZO(Anode)”. LG-201(ETL) layer was studied for more efficient electron injection from cathode to EML, and LG-101(HIL & Buffer layer) covered by IZO anode was also explored for decreasing the EL surface damage.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• IE interfaces
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• v.10 no.1
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• pp.47-55
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• 1997

This paper deals with an assembly process of the TFT glasses and the color filters in LCD manufacturing. Two specific problems are presented and solved. One is a matching problem to find the best matches between a set of TFT glasses and a set of color filters, which result in the maximum number of good LCD assemblies. A simple mathematical model is constructed for this problem and an optimal solution can be obtained using an existing algorithm. The other is a main problem that requires a determination of an economic lot size of the color filters which are going to be assembled with a given set of TFT glasses. A Bayesian dynamic forecasting model is developed to predict the defective patterns of color filters. Based on the predicted defective rate of color filters, the minimum lot size of the color filters can be determined to minimize the probability of losing good TFT glasses and color filters.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.841-844
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• 2007

In this paper, a vertical block mura, which massively occurred in the LCD products, was investigated extensively by various methods, source drain (SD) line shift is found out to be one of the key reasons. This work to some extent, establishes theoretic hypothesis for further research and solutions similar issues.

• Journal of Information Display
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• v.10 no.2
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• pp.54-61
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• 2009

The results of the optimization of the organic passivation process for fabricating thin-film transistors (TFTs) with a high aperture ratio on a seventh-generation glass (2200${\times}$1870 mm) substrate for LCD-TV panels are reported herein. The optimization of the organic passivation process has been verified by checking various factors, including the material properties (e.g., thickness, stain, etching, thermal reflow) and the effects on the TFT operation (e.g., gate/data line delay and display-driving properties). The two main factors influencing the organic passivation process are the optimization of the final thickness of the organic passivation layer, and the gate electrode. In conclusion, the minimum possible final thickness was found to be $2.42{\um}m$ via simulation and pilot testing, using the full-factorial design. The optimization of the organic passivation layer was accomplished by improving its brightness by over 10 cd/$m^2$ (ca. 2% luminance) compared to that of the conventional organic passivation process. The results of this research also help reduce the reddish stain on display panels.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.77-78
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• 2000

We verified the charged static electricity on LCD glass influences upon the etching uniformity of dry etching process by plasma. In the TFT-LCD manufacturing process, we mainly paid attention to eliminate the static electricity for TFT reliability. The static electricity caused the serious ununiformity of etching surface profile and etching rate in the dry etch process. Through our experiment on the made static electricity from -200V to -1000V, it was confirmed that the static electricity on LCD glass caused the etching rate variation of $1.5%{\sim}15%$. We recommend the etching process equipment for LCD manufacturing have to establish the soft X-ray exposure module system for eliminating the static electricity inside the loading and unloading chamber.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.46-49
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• 2002

Recent trends of low-temperature polycrystalline Si (LTPS) TFT technologies are presented. Characteristics of LTPS TFT processes are compared with those of a-Si TFT's. In order to compete with well-established a-Si TFT-LCD technology, LTPS process has to be as simple as possible. One of the most critical processes, recrystallization of a-Si thin films, could be the process for the differentiation of LTPS technology. Along with these technical reviews, a recent development of the 5.0-inch LTPS TFT-LCD is presented. In order to achieve high-performance display characteristics and save the power consumption, the transflective mode is adopted. The 5.0-inch display with 186 pixel-per-inch, high-resolution LCD was measured to be 10% for the reflectance and 70:1 for the contrast ratio. This display is designed for a high information content hand-held PC (HHPC) application.