• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.287-291
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• 2005

Pop-in deformation phenomena in aluminum was studied. Whether a pop-in occurs or not depended on the surface polishing method. Pop-in did not occur in aluminum which was polished mechanically, while it occurred in aluminum which was polished electrically. When pop-in occurred, elastic deformation preceded. Pop-in mechanism based on dislocation activity was suggested. Suggested mechanism was consistent with the result of microstructure analysis by Focused Ion Beam polisher (FIB) and Transmission Electron Microscopy (TEM).

• Journal of the Mineralogical Society of Korea
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• v.9 no.1
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• pp.26-34
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• 1996

The white leather-like playgorskite occurs as a vein in the Cretaceous sedimentary rocks in the Yeongsan area, Kyeongnam, Korea. It has been investigate by means of XRD, TEM, DTA-TG, IR and chemical analysis. The palygorskite vein is composed mostly of well-crystallized palygorskite. The wall rock of the vein is altered to smectite along both sides of the vein. According to TEM observation the palygorskite shows a fibrous habit. The sizes offibers are quite variable, ranging from 0.1 to 3.0 micron in length. From XRD data, the palygorskite has orthorhombic unit cell with a=12.726$\AA$, b=17.796$\AA$, c=5.1666$\AA$. The chemical formula of the palygorskite was calculated as [Si7.93Al0.07](Al1.91Fe+30.11Mg1.96)Ca0.01O20(OH)4(OH2)2.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.502-507
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• 2015

We examined the photo catalytic activity and catalytic recyclability of CdSe/graphene nanocomposites fabricated via modified hydrothermal technique. The prepared composites were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray (EDX), transmission electron microscopy (TEM), Raman spectroscopic analysis, and X-ray photoelectron spectroscopy (XPS). The photocatalytic behavior was investigated through decomposition of RBB as a standard dye under visible light radiation. Our results indicate that there is significant potential for graphene based semiconductor hybrids materials to be used as photocatalysts under visible light irradiation for the degradation of organic dyes from industry effluents.

• Journal of the Korean Ceramic Society
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• v.45 no.10
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• pp.573-578
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• 2008

In the preparation of hydroxyapatite(HAp)/gelatin(GEL) nanocomposite, GEL matrix was modified by the introduction of chondroitin sulfate(ChS) to obtain a strongly organized composite body. The formation reaction of the HAp/GEL-ChS nanocomposite was then investigated via XRD, DT/TGA, FT-IR, TEM and SEM. The organic-inorganic interaction between HAp nanocrystallites and GEL molecules was confirmed from DT/TGA and FT-IR. According to the DT/TGA results, the exothermal temperature zone between 300 and $550^{\circ}C$ showed an additional peak temperature that indicated the decomposition of the combined organics of the GEL and ChS. From the FT-IR analysis, calcium phosphate(Ca-P) was covalently bound with the GEL macromolecules modified by ChS. From TEM and ED, the matrix of the GEL-ChS molecules was mineralized by HAp nanocrystallites and the dense dried nanocomposite body was confirmed from SEM micrographs.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.27-31
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• 2001

Hi-Nicalon SiC fiber reinforced SiC composites (SiC/SiC) have been fabricated by the reaction sintering process. Braided Hi-Nicalon SiC fiber with double interphases of BN and SiC was used in this composite system. The microstructures and the mechanical properties of reaction sintered SiC/SiC composites were investigated through means of electron microscopies (SEM, TEM, EDS) and bending tests. The matrix morphology of reaction sintered SiC/SiC composites was composed of the SiC phases that the composition of the silicon and the carbon is different. The TEM analysis showed that the residual silicon and the unreacted carbon were finely distributed in the matrix region of reaction sintered SiC/SiC composites. Reaction sintered SiC/SiC composites also represented proper flexural strength and fracture energy, accompanying the noncatastrophic failure behavior.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.1
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• pp.44-51
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• 2005

Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.147-151
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• 2011

In this study, we prepared graphene by using the modified Hummers-Offeman method and then introduced the metals (Pt, Pd and Fe) for dispersion on the surface of the graphene for synthesis of metal-graphene composites. The characterization of the prepared graphene and metal-graphene composites was performed by X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis and transmission electron microscopy (TEM). According to the results, it can be observed that the prepared graphene consists of thin stacked flakes of shapes having a well-defined multilayered structure at the edge. And the metal particles are dispersed uniformly on the surface of the graphene with an average particle size of 20 nm.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.92-99
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• 1993

ZnO thin films were depositsd by Plasma enhanced CVD (PUW) using Diethylzinc and N2O gas, and micro-structue of ZnO thin films were investigated ZnO thin films composed of micro-crystallites was deposited at the substrate of loot. However, highly c-axis oriented ZnO thin films were deposited on the glass substrates above 200℃. TEM analysis revealed that an epitaxial (002) ZnO thin film was deposited on c-plane sapphire substrate at the substrate temperature of 350℃, and More patterns showing partial dislocation were observed at the grain boundary.