• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.6
• /
• pp.297-301
• /
• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• Korean Journal of Materials Research
• /
• v.18 no.5
• /
• pp.235-240
• /
• 2008

This paper presents results and observations obtained from a study of the optical and thermal properties of alkali tellurite depending on the composition. Fourier transform infrared (FT-IR) spectra showed evidence of chemical modification from $TeO_4$ trigonal bipyramids (tbp) to $TeO_3$ trigonal pyramids (tp) in tellurite glasses. The optical band gaps of the different glass samples calculated using Tauc's method were found to range from 3.5-3.8 eV. The glass transition temperature (Tg) and glass stability (${\Delta}T$) of alkali tellurite glasses were investigated, as $M_2O$ [M: Li, Na, K] amounted to 25 mol%, through the use of differential thermal analysis (DTA). The coefficient of thermal expansion (CTE) was measured in a thermo mechanical analysis (TMA) with a slow heating rate after the glass samples were annealed. The results confirm that the optical band gap of alkali tellurite glasses depends on the Te-O-Te structural relaxation related to the ratio of bridging/non bridging oxygen (BO/NBO). In contrast, the thermal properties are related to the ionic field strength of the Te-O-M and M-O-M bonds, and the Te-O-Te breakage depends on the ratio of BO/NBO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.4
• /
• pp.314-320
• /
• 1998

In this study, we have investigated crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0) thin films prepared by thermal evaporation. The change of reflectance according to phase change from amorphous to crystalline phases with annealing and exposure of diode laser is measured b the n&k analyzer and the surface morphology between amorphous and crystalline phase is analyzed by SEM and AFM. The difference in reflectance($\DeltaR$) between amorphous and crystalline phase appears approximately 20% at the diode laser wavelength, 780nm in all prepared films. Especially, the reflectance difference,$\DeltaR$ comes up to about 30% in $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film. Also, amorphous-to-crystalline phase change is observed in all prepared films. As a result of the measurement of the reflectance using diode laser, the reflectance is increased in proportion to the laser power and exposure time in all films. As a result of observing each film with the SEM and AFM, the surface morphology of the annealed and the exposed films are evidently increased than those of as-deposited films. The fast crystallization is occurred by increasing in Te content. Therefore, we conclude that the $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ and $Te_1(Sb_{85}Ge_{15})_{99}$ thin films can be evaluated as an attractive optical recording medium with high contast ratio and fast erasing time due to crystallization.

• Korean Journal of Acupuncture
• /
• v.37 no.4
• /
• pp.271-275
• /
• 2020

Objectives : The acupoint TE11 (cheongnaengyeon; CNY) firstly appeared in the ≪A-B Classic of Acupuncture and Moxibustion (AB Classic)≫. The name CNY is known to be originated from an ancient deep pool described in the book of ≪Chuangtzu (Jangja in Korean)≫. Description of the name, however, was not found in a single form in the book of ≪Chuangtzu≫ and its annotated books which made a confusion. The aim of the present study is to review the name of TE11 in terms of its origin. Methods : We have compared printed editions of ≪Chuangtzu≫ and its annotated books and various acupuncture classics including ≪AB Classic≫, ≪Essential Prescriptions Worth a Thousand Gold for Emergencies (Essential Prescriptions)≫, ≪Illustrated Manual of Acupuncture Points of the Bronze Figure (Illustrated Manual)≫, ≪Collection of Gems of Acupuncture and Moxibustion (Collections of Gems)≫, and ≪Complete Compendium of Acupuncture and Moxibustion (Complete Compendium)≫. Results : The name of ancient deep pool was found in two different forms in the book of ≪Chuangtzu≫ and its annotated books. One was CNY, the other was Cheong Ryeong Yeon (CRY). The description in the ≪Chuangtzu≫, the source book, was CRY. In addition, the acupoint TE11 was described as CRY in the ≪AB Classic≫, Cheong Ryeong Cheon in the ≪Essential Prescriptions≫. Meanwhile, the point was described as CNY in the ≪Illustrated Manual≫, the ≪Collections of Gems≫ and the ≪Complete Compendium≫. Conclusions : Data suggest that the original description was CRY and a mix of CNY and CRY as a name of TE11 was used. The Korean standard name of TE11 should be changed as CRY.

• Archives of Plastic Surgery
• /
• v.49 no.6
• /
• pp.729-739
• /
• 2022

Cranioplasties are common procedures in plastic surgery. The use of tissue expansion (TE) in staged cranioplasties is less common. We present two cases of cranioplasties with TE and systematically review literature describing the use of TE in staged cranioplasties and postoperative outcomes. A systematic review was performed by querying multiple databases. Eligible articles include published case series, retrospective reviews, and systematic reviews that described use of TE for staged bony cranioplasty. Data regarding study size, patient demographics, preoperative characteristics, staged procedure characteristics, and postoperative outcomes were collected. Of 755 identified publications, 26 met inclusion criteria. 85 patients underwent a staged cranioplasty with TE. Average defect size was 122 cm², and 30.9% of patients received a previous reconstruction. Average expansion period was 14.2 weeks. The most common soft tissue closures were performed with skin expansion only (75.3%), free/pedicled flap (20.1%), and skin graft (4.7%). The mean postoperative follow-up time was 23.9 months. Overall infection and local complication rates were 3.53 and 9.41%, respectively. The most common complications were cerebrospinal fluid leak (7.1%), hematoma (7.1%), implant exposure (3.5%), and infection (3.5%). Factors associated with higher complication rates include the following: use of alloplastic calvarial implants and defects of congenital etiology (p = 0.023 and 0.035, respectively). This is the first comprehensive review to describe current practices and outcomes in staged cranioplasty with TE. Adequate soft tissue coverage contributes to successful cranioplasties and TE can play a safe and effective role in selected cases.

• Journal of Powder Materials
• /
• v.31 no.1
• /
• pp.50-56
• /
• 2024

We report the effect of plastic deformation on the thermoelectric properties of n-type Bi₂Te_2.5Se_0.5 compounds. N-type Bi₂Te_2.5Se_0.5 powders are synthesized by an oxide-reduction process and consolidated via spark-plasma sintering. To explore the effect of plastic deformation on the thermoelectric properties, the sintered bodies are subjected to uniaxial pressure to induce a controlled amount of compressive strains (-0.2, -0.3, and -0.4). The shaping temperature is set using a thermochemical analyzer, and the plastic deformation effect is assessed without altering the material composition through differential scanning calorimetry. This strategy is crucial because the conventional hot-forging process can often lead to alterations in material composition due to the high volatility of chalcogen elements. With increasing compressive strain, the (00l) planes become aligned in the direction perpendicular to the pressure axis. Furthermore, an increase in the carrier concentration is observed upon compressive plastic deformation, i.e., the donor-like effect of the plastic deformation in n-type Bi₂Te_2.5Se_0.5 compounds. Owing to the increased electrical conductivity through the preferred orientation and the donor-like effect, an improved ZT is achieved in n-type Bi₂Te_2.5Se_0.5 through the compressive-forming process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.305-306
• /
• 2008

본 논문에서는 PRAM 에서 기록매질로 이용될 수 있는 최적의 물질을 찾고자 $Ge_2Sb_2Te_5$ 박막에 Al을 첨가하여 비정질-결정질 천이시의 원자구조와 상변화 특성간의 관계를 연구하였다. 이 실험에 사용된 $Al_x(Ge_2Sb_2Te_5)_{1-x}$ 조성은 5N의 금속 파우더를 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si (100) 및 유리 (corning glass, 7059) 기판위에 200nm 두께로 박막을 증착하였다. 비정질 박막의 상변화에 따른 반사도 차이를 평가하기 위해서 658 nm의 LD가 장착된 나노펄스 스캐너를 이용하여 power; 1~17mW, pulse duration; 10~460 ns의 범위에서 각 조성의 비정질-결정질 상변화속도를 측정, 비교 분석하였다. 또한 각각의 박막을 $100^{\circ}C$ 에서 $400^{\circ}C$ 까지 $50^{\circ}C$ 간격으로 $N_2$ 분위기에서 1시간동안 열처리 한 후 XRD와 UV-Vis-NIR spectrophotometer를 사용하여 각 상의 구조분석 및 광학적 특성을 분석하였다. 또한 4-point probe로 면저항을 측정하였다.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.5
• /
• pp.253-256
• /
• 2017

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

• Journal of Korea Foundry Society
• /
• v.17 no.1
• /
• pp.76-84
• /
• 1997

An investigation of the effects of transverse magnetic field on melt convection and macrosegregation in vertical Bridgman growth of Te doped InSb was carried out by means of microstructure observation, the measurement of Te distribution by Hall measurement, electrical resistivity measurement and X-ray analysis. Prior to the experiments, interface stability, convective instability and suppression of convection by magnetic field were examined. A thermosolutal convection in the Te doped InSb melt occurred in the examined growth condition without magnetic field. The effective distribution coefficient, $K_{eff}$, was about 0.35 without magnetic field, 0.45 with magnetic field of 2kG, and 0.7 at 4kG. It was found that the stronger the applied magnetic field was, the more the convection was suppressed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.229-230
• /
• 2008

본 논문에서는 비정질-결정질간 가역적 상변화 기록 매질로 이용되고 있는 $(Ag_{5.5}In_{6.5}Sb_{59}Te_{29})$ 합금 박막의 Ag 조성 증가에 따른 원자구조와 상변화 특성간의 상관관계를 연구하였다. 실험에 사용된 AgInSbTe 조성은 5N의 금속 파우더를 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si (100) 및 유리(corning glass, 7059) 기판위에 200 nm 두께로 박막을 증착하였다. 비정질 박막의 결정화속도를 평가하기 위해서 658 nm의 LD가 장착된 나노-펄스 스캐너를 이용하여 power; 1~17mW, pulse duration; 10~460 ns의 범위에서 각 조성의 상변화에 따른 반사도 차이를 측정, 비교 분석하였다. 또한 각각의 박막을 $100^{\circ}C$ 에서 $300^{\circ}C$까지 $50^{\circ}C$ 간격으로 $N_2$ 분위기에서 1시간동안 열처리 한 후 XRD와 UV-Vis-NIR spectrophotometer를 사용하여 각 상의 구조분석 및 광학적 특성을 분석하였으며, 4-point probe로 면저항을 측정하였다.