• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.700-708
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• 2013

Pyroprocessing has been developed for the purpose of resolving the current spent nuclear fuel management issue and enhancing the recycle of valuable resources. Pyroprocessing has been developed with the dry technologies which are performed under high temperature conditions excluding any aqueous processes. Pyro-processes which are based on the electrochemical principles require pretreatment processes and a voloxidation process is considered as a pretreatment step for an electrolytic reduction process. Various kinds of gas conditions are applicable to the voloxidation process and the understanding of Cs behavior during the process is of importance for the analyses of waste characteristics and heat load on the overall pyroprocessing. In this study, the changes of chemical compounds with the gas conditions were calculated by analyzing gas-solid reaction behavior based on the chemical equilibria on a Cs-Te-O system. $Cs_2TeO_3$ and $Cs_2TeO_4$ were selected after a Tpp diagram analysis and it was confirmed that they are relatively stable under oxidizing atmospheres while it was shown that Cs and Te would be removed by volatilization under reducing atmosphere at a high temperature. This work provided basic data for predicting Cs behavior during the voloxidation process at which compounds are chemically distributed as the first stage in the pyroprocessing and it is expected that the results would be used for setting up material balances and related purposes.

• Solar Energy
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• v.10 no.3
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• pp.53-59
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• 1990

[ $CdSe_xTe_{1-x}$ ] ($0{\le}x{\le}1$) thin films were deposited cathodically on Ti substrates in aqueous sulfric acid solution containing 1M $CdSO_4$ and 1mM$(TeO_2+SeO_2)$. The limiting current was observed in deposition potential ranging from -0.20 to -0.65 vs.Ag/AgCl ; although its value has changed a little depending on the mole ratio x, the limiting current was almost constant in deposition potential of -0.45V in spite of the change of mole ratio x. The crystal structure of the $CdSe_xTe_{1-x}$ thin films was cubic zinc-blonde in the range of mole ratio $x=0{\sim}0.8$, and hexagonal wurtzite in the mole ratio x=1 When the mole ratio changed from x=0 to x=0.8, diffraction peaks was shifted to the larger diffraction angle.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.49.2-49.2
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• 2010

Polycrystalline CdTe thin films for solar cell continues to be a promising material for the development of cost effective and reliable photovoltaic processes. The two key advantages of this material are its high optical absorption coefficient and its near ideal band gap for photovoltaic conversion efficiency of 1.4-1.5 eV. In this study we made the CdTe thin films for solar cell application which was deposited on the glass substrates using a modified chemical spray method at low temperature. This process does not require the sophisticated and expensive vacuum systems. The prepared CdTe films were characterized with the aid of scanning electron microscope (SEM), UV-visible spectrophotometer, and X-ray diffraction spectrometer (XRD). Following are results of a study on the "Human Resource Development Center for Economic Region Leading Industry" Project, supported by the Ministry of Education, Science & Tehnology(MEST) and the National Research Foundation of Korea(NRF).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.103-103
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• 2009

본 논문에서는 기존의 GST(GeSbTe=2:2:5)와 비교하여 상변화 재료로서의 Ga 도핑된 $Ge_2Sb_2Te_5$의 가능성을 확인하고자 하였다. 실험에 사용된 Ga 도핑된 $Ge_2Sb_2Te_5$ 박막은 전통적 melt-quenching 방법에 의해 비정질로 제작된 벌크를 Thermal evaporation을 통하여 Si(100) 및 유리 (coming glass, 7059) 기판 위에 200nm의 두께로 증착하여 제작하였다. 각 박막의 상변화 특성은 여러 온도에서 열처리된 박막을 X-ray diffraction (XRD) 측정을 통하여 확인하였다. 각 조성 박막의 비정질-결정질 상변화속도 비교를 위하여 나노-펄스 스캐너 (nano-pulse scanner)를 사용하여 power; 1~17mW, pulse duration; 10~460ns 범위에서 박막의 상변화에 따른 반사도 차이를 측정 분석하였다. Ga의 도핑농도에 따른 전기적 특성 차이를 확인하기 위하여 4-point probe를 이용하여 박막의 면 저항을 측정하였고 또한 hall 측정을 통하여 박막의 흘 계수, 흘 농도 및 이동도를 확인하고 Ga가 상전이에 미치는 영향에 대하여 분석하였다.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.451-454
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• 2009

The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.6
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• pp.707-712
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• 2005

PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.47-47
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• 2009

The formation of variable one-dimensional structures including core/shell structure is of particular significance with respect to potential applications for thermoelectric devices with the enhanced figure of merit ($ZT=S2{\sigma}T/{\kappa}$). We report the fabrication of Bi-Te core/shell nanowire based on a novel stress induced method. Fig. 1 schematically shows the nanowire fabrication process. Bi nanowires are grown on the Si substrate by the stress-induced method, and then Te is evaporated on the Bi nanowires. Fig. 2 is a transmission electron microscopy image clearly showing a core/shell structure for which effective phonon scattering and quantum confinement effect are expected. Electrical conductivity of the core/shell nanowire was measured at the temperatures from 4K to 300K, respectively. Our results demonstrate that Bi-Te core/shell nanowire can be grown successfully by the stress-induced method. Based on the result of electrical transport measurement and characteristic morphology of rough surface, Seebeck coefficient and thermal conductivity of Bi-Te core/shell nanowires are presented.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.306-312
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• 1995

본 연구에서는 비정질 실리콘과 CuInSe2와 함께 지상용 태양전지재료로 널리 연구되고 있는 다결정 CdTe 박막의 열처리방법으로서 로열처리와 반도체 공정에서 사용되는 급속열처리 방법을 이용하여 이들 열처리의 효과를 분석함으로써 태양전지용 다결정 CdTeq 박막에 적합한 효율적인 열처리 방법에 대한 연구를 수행하였다. 증착 후 열처리조건에 따른 결정구조, 결정립 크기, 표면과 박막내부의 성분, 밴드갭 에너지값, 그리고 전기비저항 등을 측정하여 태양전지용 CdTe 박막의 물리적.전기적 특성에 미치는 열처리효과를 관찰하였다. 연구결과 30$0^{\circ}C$에서 증착하고 CdCI2 처리 후 $400^{\circ}C$ 30분간 로열처리를 한 경우, 그리고 $200^{\circ}C$에서 증착한 후 $500^{\circ}C$ 부근에서 1분간 급속열처리를 한 경우 다결정 CdTe 박막의 물리적 전기적 특성이 현저히 향상됨을 알 수 있었다. 특히 급속열처리를 한 경우 로열처리에 비해 결정립의 크기는 작으나 전기비저항이 낮고 밴드갭에너지가 단결정에 더욱 접근하며 태양전지용 다결정 CdTe 박막의 열처리 방법으로 적용할 가치가 있는 방법으로 사료된다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.4
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• pp.535-541
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• 1998

A 2 stage 6-pole bandpass filter(BPF) is designed and implemented by using triple-mode cavity for satellite payload system. The BPF has an 100 MHz bandwidth at the center frequency of 14.5 GHz, Ku-band. The cavity filter uses two orthogonal $TE_{113}$ modes and one $TM_{012}$ mode. The intercavity coupling between the adjacent cavities results in a Chebyshev response and is accomplished by H-field component of TE modes. The size and location of intercavity slot are determined by the coupling equation from H-field of TE resonant modes in circular cavity. The measured filter response agrees well with the theoretical data.

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.438-445
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• 2001

600 W의 마이크로파 출력 하에서 PbO, V$_2$O$_{5}$, TeO$_2$ 및 V$_2$O$_{5}$-PbO-TeO$_2$성분들의 마이크로파 발열 특성을 조사하였다. V$_2$O$_{5}$ 성분의 높은 마이크로파 흡수능에 기인하여 V$_2$O$_{5}$-PbO-TeO$_2$유리상 시편들은 마이크로파를 흡수하여 주어진 온도까지 직접 가열되었다. XRD, OM, SEM 및 고전압 발생 측정기를 통하여 재래식 열 및 마이크로파 공정에서 열처리된 시편들의 결정화 및 전기 전도도의 특성을 비교 조사하였다. PbV$_2$O$_{6}$ 및 Pb$_4$V$_2$O$_{9}$ 결정상들이 마이크로파 열처리된 시편에서는 존재하였다. 그러나, 재래식 열처리된 시편들에서는 존재하지 않는다는 것을 확인하였고, 재래식 열처리된 시편들에 비하여 마이크로파 열처리된 시편들의 전기 전도도 값이 상대적으로 높았다.