• 제목/요약/키워드: TE4

검색결과 1,194건 처리시간 0.027초

The Synthesis of CdTe Nanowires Based on Stabilizers with Low Concentrations (저비율의 안정제를 이용한 CdTe 나노선 합성)

  • Kim, Ki-Sub;Kang, Jeong Won
    • Korean Chemical Engineering Research
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    • 제53권6호
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    • pp.798-801
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    • 2015
  • Nanomaterials (NMs) based on cadmium telluride (CdTe) are the theme of numerous research areas due to their unique chemical and physical properties. NM synthesis via a size-controlled procedure has become an intriguing research topic because NMs exhibit novel optical and physical properties depending on their size and shape. In this study, we prepared CdTe nanowires (NWs) via self-assembly from individual Nanoparticles (NPs). Thioglycolic acid (TGA)-to-Cd ion ratio of 1.3 was used instead of the traditional value of 2.4 and the reduced amount of stabilizer resulted in reorganization from individual NPs into NWs consisting of multi-layers of individual NPs. Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were performed to characterize NWs. The produced nanowires were straight and long in shape and their length ranged from 500 nm to tens of micrometers.

Growth and Characterization of $CuInTe_2$ Single Crystal thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE) 방법에 의한 $CuInTe_2$ 단결정 박막 성장과 특성에 관한 연구)

  • 홍광준;이관교;이상열;유상하;정준우;정경아;백형원;방진주;신영진
    • Korean Journal of Crystallography
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    • 제11권4호
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    • pp.212-223
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    • 2000
  • A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

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Properties of BiSbTe3 Thin Film Prepared by MOCVD and Fabrication of Thermoelectric Devices (MOCVD를 이용한 BiSbTe3 박막성장 및 열전소자 제작)

  • Kwon, Sung-Do;Yoon, Seok-Jin;Ju, Byeong-Kwon;Kim, Jin-Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • 제22권5호
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    • pp.443-447
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    • 2009
  • Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

A novel approach in voltage transient technique for the measurement of electron mobility and mobility-lifetime product in CdZnTe detectors

  • Yucel, H.;Birgul, O.;Uyar, E.;Cubukcu, S.
    • Nuclear Engineering and Technology
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    • 제51권3호
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    • pp.731-737
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    • 2019
  • In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

Colloidal synthesis of IR-Iuminescent HgTe quantum dots (콜로이드 합성법에 의한 HgTe 양자점의 제조와 특성 분석)

  • Song, Hyun-Woo;Cho, Kyoung-Ah;Kim, Hyun-Suk;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.31-34
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    • 2002
  • HgTe quantum dots were synthesized in aqueous solution at room temperature by colloidal method. The synthesized materials were identified to be zincblende cubic structured HgTe quantum dots by X-ray diffraction and transmission electron microscopy image revealed that these quantum dots are agglomerate of a individual particle. The colloidally prepared HgTe quantum dots have the sphere-like shape with a diameter of approximately 4 nm. The optical properties of the HgTe quantum dots were investigated with photoluminescence(PL). The PL appears in the near-infrared region, which represent a dramatic shift from bulk HgTe behavior. The analytic results revealed that HgTe quantum dots have the broad size distribution, as PL emission spectrum covers the spectral region from 900 to 1400 nm. In this study, the factors affecting PL of HgTe quantum dots and particle size distributiont are described.會Ā᐀䁇?⨀젲岒Ā㰀會Ā㰀顇?⨀끩Ā㈀會Ā㈀?⨀䡪ఀĀ᐀會Ā᐀䡈?⨀Ā᐀會Ā᐀ꁈ?⨀硫ᜀĀ저會Ā저?⨀샟ගऀĀ저會Ā저偉?⨀栰岒ఀĀ저會Ā저ꡉ?⨀1岒Ā저會Ā저J?⨀惝ග؀Ā؀會Ā؀塊?⨀ග嘀Ā切會Ā切끊?⨀⣟ගĀ搀會Ā搀ࡋ?⨀큭킢Ā저會Ā저恋?⨀桮킢Ā저會Ā저롋?⨀⣅沥ࠀĀࠀ會Āࠀ၌?⨀샅沥Ā저會Ā저桌?⨀壆沥ሀĀ저會Ā저쁌?⨀o킢瀀ꀏ會Āᡍ?⨀棤좗ĀĀĀ會ĀĀ灍?⨀å좗ĀĀĀ會ĀĀ졍?⨀飥좗ĀĀĀ會ĀĀ⁎?⨀?ꆟᤀ

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Anti-Oxidative and Anti-Inflammation Activities of Pork Extracts

  • Gil, Juae;Kim, Dongwook;Yoon, Seok-Ki;Ham, Jun-Sang;Jang, Aera
    • Food Science of Animal Resources
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    • 제36권2호
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    • pp.275-282
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    • 2016
  • This study was conducted to evaluate the antioxidative and anti-inflammatory effects of boiled pork powder (BPP) and hot water extract powder (HWEP) from 4 cuts of meat from Landrace × Yorkshire × Duroc (LYD). The highest DPPH radical scavenging activities determined were from BPP of Boston butt (13.65 M TE) and HWEP of loin (19.40 M TE) and ham (21.45 M TE). The 2,2-azino-bis-3-ethylbenzothiazoline-6-sulfonic acid (ABTS) radical scavenging activities of BPP from shoulder ham (39.28 M TE) and ham (39.43 M TE) were higher than those of other meat cuts, while HWEP of ham exhibited the highest ABTS radical scavenging activity. A higher oxygen radical absorbance capacity was determined for BPP from ham (198.35 M TE) and in HWEP from loin (204.07 M TE), Boston butt (192.85 M TE), and ham (201.36 M TE). Carnosine content of BPP and HWEP from loin and were determined to be 106.68 and 117.77 mg/g on a dry basis, respectively. The anserine content of BPP (5.26 mg/g, dry basis) and HWEP (6.79 mg/g, dry basis) of shoulder ham exhibited the highest value as compared to the extracts from the other meat cuts. The viability of RAW 264.7 cells was increased with increasing HWEP from loin and ham treatment. In addition, the expression of IL-6 and TNF-α was significantly reduced by HWEP from loin and ham, in a dose dependent manner. These results suggested that boiled pork and hot water extract of pork have antioxidative and cytokine inhibitory effects.

The Direct TM01-TE11 Mode Converter Using Circular Waveguide for High Power Applications (원형 도파관을 이용한 초고출력용 TM01-TE11 직접 모드 변환기)

  • Lee Byoung-Moo;Lee Sang-Heun;Yoon Young-Joong;Yang Gi-Joo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • 제17권4호
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    • pp.351-357
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    • 2006
  • In this paper, a direct $TM_{01}-TE_{11}$ mode converter of circular waveguide which is used the approximated design method of mode conversion between $TM_{01}$ and $TE_{11}$ modes is designed for radiation with the maximum directivity of high power energy into air (rom high power microwave antenna system. The proposed direct $TM_{01}-TE_{11}$ mode converter is calculated and designed with an approximated method for non-linear function about an extended non-constant serpentine type of circular waveguide. Then, the designed mode converter is optimized by length of 200 mm and efficiency above 95% by FIM simulation and achieved short length and high efficiency of the antenna by results of fabricated and measured characteristics.

The electron density distribution and the structure of semiconductor HgCdTe (반도체 HgCdTe의 전자 밀도 분포와 결정 구조)

  • Kook-Sang Park;Ky-Am Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • 제4권4호
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    • pp.388-394
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    • 1994
  • A Hg(0.79)Cd(0.21)Te single crystal has been grown by the Traveling Heater Method(THM). Its zinc blend cubic structure is identified from the X-ray diffraction patterns and its lattice constant is determined to be $6.464 {\AA}$ using the least-square method of Cohen. From the values of the lattice constant, the composition x is determined to be 0.21. The electron density is calculated from the relative intensities of the scattered X-ray and compared with the theoretically calculated values. From the electron density distribution, it is shown that the crystal binding of Hg(1-x)Cd(x)Te(MCT) is mainly covalent and has tetrahedron bonds between adjacent atoms.

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A Parametric Voice Activity Detection Based on the SPD-TE for Nonstationary Noises (비정체성 잡음을 위한 SPD-TE 기반 계수형 음성 활동 탐지)

  • Koo, Boneung
    • The Journal of the Acoustical Society of Korea
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    • 제34권4호
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    • pp.310-315
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    • 2015
  • A single channel VAD (Voice Activity Detection) algorithm for nonstationary noise environment is proposed in this paper. Threshold values of the feature parameter for VAD decision are updated adaptively based on estimates of means and standard deviations of past non-speech frames. The feature parameter, SPD-TE (Spectral Power Difference-Teager Energy), is obtained by applying the Teager energy to the WPD (Wavelet Packet Decomposition) coefficients. It was reported previously that the SPD-TE is robust to noise as a feature for VAD. Experimental results by using TIMIT speech and NOISEX-92 noise databases show that decision accuracy of the proposed algorithm is comparable to several typical VAD algorithms including standards for SNR values ranging from 10 to -10 dB.