• Journal of the Korean institute of surface engineering
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• v.42 no.5
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• pp.197-202
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• 2009

The electrodeposition in acidic aqueous electrolyte bath of cadmium telluride on gold electrodes has been studied by electrochemical analysis. Conventional cyclic voltammetry using potentiostat is considered as a reliable method to study electrochemical behavior of electrodeposition of CdTe. In this paper, the mechanism of CdTe deposition and its cyclic voltammetry were studied with the Te ion concentration, temperature, potential, and scan rate. We also investigated surface morphologies using FESEM and atomic composition of Cd and Te using EDS. Atomic composition of Cd and Te were varied with Te ion concentration in the electrolyte.

• Bulletin of the Korean Chemical Society
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• v.26 no.5
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• pp.735-739
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• 2005

Presented is a voltammetric study of co-adsorption of irreversibly adsorbing Sb and Te on Pt(111). When a layer of Sb and Te was formed via simultaneous adsorption, the reduction peak of Te was observed at 0.30 V in the initial cathodic scan. In contrast, sequential adsorption of Sb followed by Te adsorption led to a Te reduction peak at 0.50 V in the initial scan. As the voltammetric scan was continued, in addition, the voltammogram of the simultaneously co-adsorbed layer changed, while that of the sequentially co-adsorbed layer did not. These observations are discussed in terms of formation of a homogeneously mixed layer and a layer consisting of heterogeneously separated domains of Sb and Te. Also, the difference in the adsorption strength of Sb and Te was observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.343-346
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• 2010

We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.203-214
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• 2022

Thermoelectric (TE) heating and cooling devices, which are able to directly convert thermal energy into electrical energy and vice versa, are effective and have exhibited a potential for energy harvesting. With the increasing consumer demands for various wearable electronics, organic-based TE composite materials offer a promise for the TE devices applications. Conductive polymers are widely used as flexible TE materials replacing inorganic materials due to their flexibility, low thermal conductivity, mechanical flexibility, ease of processing, and low cost. In this review, we briefly introduce the latest research trends in the flexible TE technology and provide a comprehensive summary of specific conductive polymer-based TE material fabrication technologies. We also summarize the manufacture for high-efficiency TE composites through the complexation of a conductive polymer matrix/inorganic TE filler. We believe that this review will inspire further research to improve the TE performance of conductive polymers.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1178-1180
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• 1995

In this paper, structual, optical and electrical properties of CdTe thin films prepared by electron beam evaporation method were studied. The crystal structure of CdTe films deposited at substrate temperature of $100{\sim}400^{\circ}C$ was zincblend type with preferential orientation of the (111)plane parallel to the substrate. The result of optical absoption and transmittance show that solar radiation with energy larger than band gap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and optical band gap of the CdTe film was larger with increasing substrate temperature. The resistivity of CdTe films deposited on the glass substrate was about $10^5{\sim}10^7{\Omega}cm$.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1287-1288
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• 2008

In the past work, we showed that $Ge_1Se_1Te_2$ thin films provide a promising alternative for PRAM applications to overcome the problems of conventional $Ge_2Sb_2Te_5$ PRAM devices. However, $Ge_1Se_1Te_2$ thin films were unstable at SET and RESET process. Because of unstable state and its melting temperature, we alloyed As for 5wt%, 10wt% and 15wt% respectively. The phase transition temperature of $Ge_1Se_1Te_2$-only thin film is found to be 213$^{\circ}C$ while As 10wt% alloyed $Ge_1Se_1Te_2$ showed phase transition at 242$^{\circ}C$ with more stability.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1541-1545
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• 2018

We study lattice thermal conductivity of $Sb_2Te_3$ using molecular dynamics simulations. The interatomic potentials are fitted to reproduce total energy and elastic constants, and phonon properties calculated using the potentials are in reasonable agreement with first-principles calculations and experimental data. Our calculated lattice thermal conductivities of $Sb_2Te_3$ decrease with temperature from 150 K to 500 K. The in-plane lattice thermal conductivity of $Sb_2Te_3$ is higher than cross-plane lattice thermal conductivity of $Sb_2Te_3$, as in the case of $Bi_2Te_3$, which is consistent with the anisotropy of the elastic constants.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.856-862
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• 1997

박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.507-513
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• 1996

Nonlinear optical properties of TeO2-PbO-GeO2 glasses were investigated and their correlation with struc-tural modification was investigated. Third-order nonlinear susceptibility $\chi$, ranged between 5.0$\times$10-13 esu and 10.7$\times$10-13 esu which are approximately 20-40 times larger than that of silica glass. The glass with a composition of 85(80TeO2-20PbO)-15GeO2(mol%) seemed to provide an optimum compromise between $\chi$and the stability against crystallization. Analyses of the Raman spectra suggested that these glasses are mainly composed of [TeO4] tbp, [TeO3]tp and [GeO4] tetrahedral structural units. It was concluded that the positive contribution of Pb2+ with high polarizability to $\chi$ in TeO2-PbO glasses overwhelmed the negative influence due to the structural modification of [TeO4]tbplongrightarrow[TeO3]tp. On the other hand addition of GeO2 in TeO2-PbO-GeO2 glasses resulted in the decrease of $\chi$ values. This behavior was attributed to the formation of [GeO4] polyhedra at the expense of [TeOn] polyhedra and Pb2+ ions which normally sowed a higher contribu-tion to $\chi$ than [GeO4] polyhedra.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.173-180
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• 1999

Thermally evaporated ZnTe films were investigated as a back contact material for CdS/CdTe solar cells. Two deposition methods, coevaporation and double-layer methods, were used for Cu doping in ZnTe films. ZnTe layers (0.2$\mu\textrm{m}$ thick) were deposited either on glass or on CdS/CdTe substrates without intentional heating of the substrates. Post-deposition annealing was performed at 200,300 and $400^{\circ}C$ for 3,6 and 9 minutes, respectively. Band gap of 2.2eV was measured for both undoped and doped films and a slight change in the shape of absorption spectra was observed in Cu-doped samples after annealing at $400^{\circ}C$. The resistivity of as-deposited ZnTe decreased from 10\ulcorner~10\ulcornerΩcm down to 10\ulcornerΩcm as Cu concentration increased from 0 to 14 at.%. There was not a noticeable change in less of annealing temperature up to $300^{\circ}C$ whereas films annealed at $400^{\circ}C$ revealed hexagonal (101) orientations as well. Some of Cu-doped ZnTe revealed x-ray diffraction (XRD) peaks related with Cu\ulcornerTe(x=1.75~2). Grain growth was observed from about 20nm in as-deposited films to 50nm after annealing at $400^{\circ}C$ by scanning electron microscopy (SEM). Cu distribution in ZnTe films was not uniform according to Auger electron spectroscopy (AES) measurements.