• Bulletin of the Korean Chemical Society
• /
• v.17 no.5
• /
• pp.424-428
• /
• 1996

TlCl2(TCNQ)2.5 and Tl(TCNQ)3 were obtained from the reaction of LiTCNQ (TCNQ=tetracyanoquinodimethane) and TlX3 (X=Cl and NO3). These compounds were characterized by spectroscopic(IR, UV, EPR), electrochemical methods, and electrical conductivity measurements. Thermal analysis (TG, DSC) was also conducted. The room temperature electrical conductivities of these compounds are in the range of semiconductors. Spectroscopic studies indicate that Tl(TCNQ)3 has fully ionized TCNQ- ions in a form of simple salt, whereas TlCl2(TCNQ)2.5 is consisted of TCNQ- and TCNQ0 as a complex salt. EPR values of TCNQ- radical anion are 1.999 in both compounds and the signal attributable to metal ion is not observed, suggesting that any unpaired electrons are localized on TCNQ radicals, and metal atoms have diamagnetic state. Ligand decomposition and reduction process are simultaneously progressed in both compounds above at 200 ℃. The endothermic activation energy of TlCl2(TCNQ)2.5 is shown somewhat larger than that of Tl(TCNQ)3, it may be due to Tl-Cl bond strength. The mid-peak potentials of these compounds are very similar to those of TCNQ and the values of Epa and Epc are almost equal to 1. The wave of thallium ion is not detected in cyclic voltammogram, hence the redox processes of the complexes might be mainly localized to the TCNQ ligand rather than thallium ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.05a
• /
• pp.77-80
• /
• 1995

Enhancing the electrical conductivity of the ultrathin organic films using Langmuir-Blodget technique is important step for the developement of molecular electronic device. The Octadecylviologen-TCNQ was synthesized with Octadecylviologen-Bromide an Lithium TCNQ Sine Octadecylviologen-TCNQ has two TCNQ snion radicals, the conductivity of LB film is expected to increase. The $\pi$-A isotherm showed that the limiting area was 150${\AA}$$\^$2/ molecule and the silid-like transition surface pressure was 25 mN/m. The electronic transition of the TNCNQ anion radical was observed at 400 nm. Intermolecular charge transfer absorption was observed at 600nm and 850~1050 nm which ay resulted from the TCNQ anion radical dimer formation. The electrical conductivity of the viologen -TCNQ LB film was 10$\^$-6/cm This values was 100 times higher than that of the quinolinium-TCNQ and pyridinium-TCNQ LB films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.166-167
• /
• 2009

본 연구에서는 2,3,5,6-fluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ)를 이용한 유기 발광 소자의 전기적 특성에 대하여 연구하였다. F4-TCNQ 는 높은 전자 친화도를 가지고 있어서 전하 수송층이나 전하 주입층에 많이 사용되고 있다. 또한 TCNQ 유도체들은 물질의 전도도를 조절하는 용도로 많이 이용된다. TCNQ 유도체를 유기 발광 소자의 전하 수송층이나 전하 주입층에 이용할 경우, 소자의 구동 전압이나 효율과 같은 특성들이 향상된다고 알려져 있다. 우리는 소자 특성에 있어서 F4-TCNQ의 영향을 알아보기 위해서 ITO(170nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(100nm)의 구조로 기본 소자를 제작하였다. 그리고 TPD층에 F4-TCNQ를 도핑하여 소자를 제작하였다. 도핑 농도는 5와 10%로 하였다. 또한 ITO와 TPD층 사이에 F4-TCNQ층을 1, 2, 그리고 5nm의 두께로 하여 소자를 제작하였다. F4-TCNQ를 5와 10% 도핑한 소자의 구동 전압은 도핑하지 않은 소자에 비해 감소하였다. 그리고, ITO와 유기물층 사이에 F4-TCNQ층을 삽입한 소자의 특성은 삽입하지 않은 소자에 비해 향상되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.275-276
• /
• 2009

We have studied physical properties of organic light-emitting diodes (OLEDs) in a device with 7,7,8,8-tetracyanoquinodimethane (TCNQ). Since the TCNQ has a high electron affinity, it is widely used for a charge-transport and injection layer. And the TCNQ-derivatives have also been used to control the conductivity of the materials. It is known that a charge injection and transport in OLEDs with a TCNQ-derivative enhances a performance of the devices such as operating voltage and efficiency. To see how the TCNQ affects on the device performance, we have made a reference device in a structure of ITO(170nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(100nm). And several type of devices were manufactured by doping TCNQ either in TPD or $Alq_3$ layer. The TCNQ layer was also formed in between the organic layers. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxy quinoline) aluminium ($Alq_3$), and TCNQ layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. The deposition rate was $1.0{\sim}1.5\;{\AA}/s$ for TPD, and $1.0{\sim}1.5\;{\AA}$ for $Alq_3$. The LiF was thermally evaporated at a deposition rate of $0.2\;{\AA}/s$ successively. The device with TCNQ-derivative improved the turn-on voltage compared to the one without TCNQ-derivative.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.1197-1199
• /
• 1993

The molecular electronic devices of organic materials are of current interest. Langmuir-Blodgett(LB) method is the most possible candidate for the development of the molecular electronic devices. One of the critical problems for applications of the LB films to the commercial products will be an electrical conductivity within a LB film. We studied the monolayer characteristics and electrical conductivity of the 1:1 mixture LB films of N-docosylquinolium-TCNQ and $TCNQ^0$. There were some differences in the $\pi-A$ isotherm and UV-visible absorption spectrum of N-docosylquinolium-TCNQ and 1:1 mixture. The small critical area of the $\pi-A$ isotherm for 1:1 mixture may result from the bilayer formation. We confirmed the incorporation of the $TCNQ^0$ with the N-docosylquinolium-TCNQ from the UV-visible absorption spectrum. But the electrical conductivity measured was $10^{-7}$ S/cm for the 1:1 mixture film layered at the surface pressure of 35 mN/m. We couldn't gain any electrical conductivity by mixing the $TCNQ^0$ into the N-docosylquinolium-TCNQ layer. We supposed that $TCNQ^0$ mixed in was not packed parallel to the TCNQ anion radical faces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.11
• /
• pp.896-900
• /
• 2010

Electrical properties of organic light-emitting diodes were studied in a device with 7,7,8,8-tetracyano-quinodimethane (TCNQ) to see how the TCNQ affects on the device performance. Since the TCNQ has a high electron affinity, it is used for a charge-transport and injection layer. We have made a reference device in a structure of ITO(170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm). And two types of devices were manufactured. One type of device is the one made by doping 5 and 10 vol% of TCNQ to N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) layer. And the other type is the one made with TCNQ layer inserted in between the ITO anode and TPD organic layer. Organic layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. It was found that for the TCNQ doped devices, turn-on voltage of the device was reduced by about 20 % and the current efficiency was improved by about three times near 6 V. And for devices with TCNQ layer inserted in between the ITO anode and TPD layer, it was found that the current efficiency was improved by more than three times even though there was not much change in turn-on voltage.

• Journal of the Korean Chemical Society
• /
• v.44 no.3
• /
• pp.281-285
• /
• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.10a
• /
• pp.18-20
• /
• 1988

The electrical characteristics of LiTCNQ, the most important intermediate in a synthesis of an organic charge transfer complex, was measured. Activation energy of LiTCNQ was estimated from the conductivity variation on the temperature increase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.11
• /
• pp.717-721
• /
• 2017

We studied the performance enhancement of organic light-emitting diodes (OLEDs) using 2,3,5,6-fluoro-7,7,8,8-tetracyanoquinodimethane ($F_4-TCNQ$) as the hole-transport layer. To investigate how $F_4-TCNQ$ affects the device performance, we fabricated a reference device in an ITO (170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm) structure. Several types of test devices were manufactured by either doping the $F_4-TCNQ$ in the TPD layer or forming a separate $F_4-TCNQ$ layer between the ITO anode and TPD layer. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxyquinoline) aluminum ($Alq_3$), and $F_4-TCNQ$ layers were formed by thermal evaporation at a pressure of $10_{-6}$ torr. The deposition rate was $1.0-1.5{\AA}/s$ for TPD and $Alq_3$. The LiF was subsequently thermally evaporated at a deposition rate of $0.2{\AA}/s$. The performance of the OLEDs was considered with respect to the turn-on voltage, luminance, and current efficiency. It was found that the use of $F_4-TCNQ$ in OLEDs enhances the performance of the device. In particular, the use of a separate layer of $F_4-TCNQ$ realizes better device performance than other types of OLEDs.

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.423-426
• /
• 1995

Langmuir-Blodgett technique offers a convenient and elegant way to organic conducting systems for ultra thin films. In conducting systems based on LB films, TCNQ derivatives have been extensively studied as electron acceptor molecules in a large number of organic conducting systems.[1] A very interesting UV-visible spectra of octadecylviologen-$(TCNQ^-)_2$ was obtained from a methylenechloride and acetonitrile mixture, and from Langmuir-Blodgett films. The ESR characteristics of octadecylviologen-$(TCNQ^-)_2$ were studied to understand conducting mechanism and structure of LB films. The ESR spectra infer that the N-dococylquinolinium-TCNQ LB films has anisotropic property. But octadecylviologen-$(TCNQ^-)_2$ does not show angular dependence. As the temperature increases from 350K to 450K, the ESR signal of LB films becomes sharp. Scanning calorimetry(DSC) of octadecylviologen-$(TCNQ^-)_2$ provides the endothermic reaction temperature of the films, 340K, which corresponds to the temperature, 365K, of the new ESR signal.