Physical Properties of the Langmuir-Blodgett Films Layered with Octadecylviologen-TCNQ

Octadecylviologen-TCNQ LB 막의 물리적 특성

Enhancing the electrical conductivity of the ultrathin organic films using Langmuir-Blodget technique is important step for the developement of molecular electronic device. The Octadecylviologen-TCNQ was synthesized with Octadecylviologen-Bromide an Lithium TCNQ Sine Octadecylviologen-TCNQ has two TCNQ snion radicals, the conductivity of LB film is expected to increase. The $\pi$-A isotherm showed that the limiting area was 150${\AA}$$\^$2/ molecule and the silid-like transition surface pressure was 25 mN/m. The electronic transition of the TNCNQ anion radical was observed at 400 nm. Intermolecular charge transfer absorption was observed at 600nm and 850~1050 nm which ay resulted from the TCNQ anion radical dimer formation. The electrical conductivity of the viologen -TCNQ LB film was 10$\^$-6/cm This values was 100 times higher than that of the quinolinium-TCNQ and pyridinium-TCNQ LB films.