• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.653-658
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• 1991

The structural variation process and relation of water of amorphous Ta-IPA bulk and thin film upon heat-treatment conditions of $25^{\circ}C$ and $340^{\circ}C$ have been studied by using the radial distribution functions$ (RDF_{obs})$ estimated from the X-ray diffraction intensities, TG-DTA and Infrared spectrophotometer. The expected Ta-IPA structure was determined by comparing the $ RDF_{obs}$ with that for $RDF_{calc}$. The structure of specimens prepared by sol-gel method is basically based on the L-$Ta_2O_5$ crystal. Thin film of samples are mainly composed of octahedral Ta$O_6$and have smaller cluster than bulk samples.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.583-586
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• 2009

The Tantalum nitride has attracted wide at attention as issues related to the toxicity of Cd-related materials. But in the titration process of Ta$Cl_5$ solution with $NH_4$OH, $NH_4$Cl, as a by product, was remained in the prepared Tantalum precursor. The tantalum precursor with $NH_4$Cl was nitrided by ammonolysis. The red color tone of $Ta_3N_5$ was reduced by the residual $NH_4$Cl reduce. Therefore, amorphous Tantalum precursor was prepared by filtering process with as hydrous ethanol to remove the $NH_4$Cl. In the case of using Tantalum precursor without $NH_4$Cl, we successfully synthesized the Tantalum nitride with good red color. The value of red color tone was improved from $a^*$=36.8 to $a^*$=53.0. The synthesized powder was characterized by XRD, SEM, the Nitrogen / Oxygen Determinator, TG-DTA, and the CIE $L^*a^*b^*$ colorimeter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.470-473
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• 2001

In this study, 70/30 mol% P(VDF-TrFE) copolymer thin films were prepared by physical vapor deposition, and dielectric properties with frequency were investigated. From results of TA(Thermal Analysis), the Curie transition temperature and melting temperature were observed at 118.8$^{\circ}C$ and 146$^{\circ}C$, respectively. Therefore, while thin films were prepared, the substrate temperature was varied from 30$^{\circ}C$ to 90$^{\circ}C$. The dielectric constant decreased with increasing frequency. At measuring frequency of 1kHz, the relative dielectric constant increased from 3.643 to 23.998 with increasing substrate temperature from 30$^{\circ}C$ to 90$^{\circ}C$. As a result of dielectric loss factor, ${\alpha}$-relaxation and ${\beta}$-relaxation were observed near at 100Hz and 1MHz, respectively. And the magnitude of ${\alpha}$-relaxation decreased and that of ${\beta}$-relaxation increased with increasing substrate temperature.