• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.239-250
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• 2003

The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.

• Journal of Life Science
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• v.16 no.1
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• pp.37-43
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• 2006

Gap junction is an ion channel forming between adjacent cells. It also acts as a membrane channel like sodium or potassium channels in a single cell. The amino acid residues up to the $10^{th}$ position in the amino (N)-terminus of gap junction hemichannel affect gating polarity as well as current-voltage (I-V) relation. While wild-type Cx32 channel shows negative gating polarity and inwardly rectifying I-V relation, T8D channel in which threonine residue at $8^{th}$ position is replaced with negatively charged aspartate residue shows reverse gating polarity and linear I-V relation. It is still unclear whether these changes are resulted from the charge effect or the conformational change of the N-terminus. To clarify this issue, we made a mutant channel harboring cysteine residue at the $8^{th}$ position (T8C) and characterized its biophysical properties using substituted-cysteine accessibility method (SCAM). T8C channel shows negative gating polarity and inwardly rectifying I-V relation as wild-type channel does. This result indicates that the substitution of cysteine residue dose not perturb the original conformation of wild-type channel. To elucidate the charge effect two types of methaenthiosulfonate (MTS) reagents (negatively charged $MTSES^-$ and positively charged $MTSET^+$) were used. When $MTSES^-$ was applied, T8C channel behaved as T8D channel, showing positive gating polarity and linear I-V relation. This result indicates that the addition of a negative charge changes the biophysical properties of T8C channel. However, positively charged $MTSET^+$ maintained the main features of T8C channel as expected. It is likely that the addition of a charge by small MTS reagents does not distort the conformation of the N-terminus. Therefore, the opposite effects of $MTSES^-$ and $MTSETT^+$ on T8C channel suggest that the addition of a charge itself rather than the conformational change of the N-terminus changes gating polarity and I-V relation. Furthermore, the accessibility of MTS reagents to amino acid residues at the $8^{th}$ position supports the idea that the N-terminus of gap junction channel forms or lies in the aqueous pore.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.42 no.4
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• pp.403-412
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• 2016

The tight junction, one of Intercellular junctions, performs a variety of biological functions by bonding adjacent cells, including the barrier function to control the movement of the electrolyte and water. Recent studies have revealed that unusual expression of tight junction-related genes have been shown to be related in cancer development and progression. Recently, there are many reports that control of tight junction proteins expression is closely related to the skin moisture. In this study, we are focusing on the regulating mechanism of tight junction-associated genes by the steviol and its derivatives. Steviol, used as a sweetner, is known to chemical compound isolated from stevia plant. The MTS (3-(4,5-dimethylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfophenyl)-2H-tetrazolium, inner salt) assay was carried out in HaCaT cells (human keratinocyte cell line) in order to determine the cytotoxicity. As a result, while steviol showing cytotoxicity from $250{\mu}M$, steviol derivatives are not cytotoxic more than $250{\mu}M$ concentration. We have observed a change in the tight junction protein via quantitative real-time PCR. Claudin 8 among tight junction proteins is only significantly reduced up to 30% in the presence of steviol. In addition, cell migration was inhibited by steviol, not by stevioside and rebaudioside. Finally, we could observe that steviol, not stevioside and rebaudioside, is able to increase the skin barrier permeability through the transepithelial electric resistance (TEER) measurements. These results suggest that the steviol and its derivatives are specifically acts on the tight junction related gene expression, but steviol derivatives are more suitable as a cosmetic material.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.240.2-240.2
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• 2005

• The Korean Journal of Pain
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• v.13 no.1
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• pp.111-114
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• 2000

Pain around the posterior iliac crest area is usually attributed to disorders of the lower lumbar or lumbosacral spine. However, low back pain arising from the thoracolumbar region is common and it is very similar to low back pain of lumbosacral origin. Low back pain of thoracolumbar origin is clinically distinguished from other nonspecific low back pain syndrome. It is characterized by symptoms localized at one posterior iliac crest innervated by posterior branch of $T_{12}$ spinal nerve. Patients never complain of spontaneous pain at the thoracolumbar junction. Only localized tenderness over involved segments of thoracolumbar junction can be noted. We report two cases of posterior iliac crest pain of thoracolumbar origin which was relieved by the treatment on the thoracolumbar junction.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.21 no.2
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• pp.63-73
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• 2017

Segmenting the image into multiple regions is at the core of image processing. Many segmentation formulations of an images with multiple regions have been suggested over the years. We consider segmentation algorithm based on the multi-phase level set method in this work. Proposed method gives the best result upon other methods found in the references. Moreover it can segment images with intensity inhomogeneity and have multiple junction. We extend our method (GLIF) in [T. Dultuya, and M. Kang, Segmentation with shape prior using global and local image fitting energy, J.KSIAM Vol.18, No.3, 225-244, 2014.] using a multiphase level set formulation to segment images with multiple regions and junction. We test our method on different images and compare the method to other existing methods.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.237-240
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• 2002

In this W, a NiSi technology suitable for sub-100nm CMOS sevice is proposed. It seems that capping layer has little effect on the sheet resistance and junction leakage current when there is no thermal treatment. However, there happened agglomeration and drastic increase of Junction leakage current without capping layer. In other word, capping layer especially TiN capping layer is highly effective in suppressing thermal effect. It is shown that the sheet resistance of 0.12${\mu}{\textrm}{m}$ linewidth and shallow p+/n junction with NiSi were stable up to 700 t /30 minute thermal treatment.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.9-14
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• 2000

We report on the novel nonequilibrium nlicrowave emission from quasiparticle-injected high-Tc superconductors. The phenomena have been observed for the current-injected YBCO/I/Au or BSCCO/I/Au thin-film tunnel junctions and BSCCO single-crystal intrinsic Josephson mesa junction samples. For the thin-film tunnel junctions, the emitted radiation appears as broadband. For the intrinsic BSCCO mesa samples, the radiation appears as three different modes of emissions depending on the bias point in the hysteretic current-voltage characteristics; Josephson-emission, nonequilibrium broad emission and sharp coherent microwave emission. The results were interpreted by the Josephson plasma excitation model due to quasiparticle injection.

• International Journal of Advanced Culture Technology
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• v.3 no.2
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• pp.171-178
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• 2015

In this work, mixing processes of hot and cold fluids of three different jet types are predicted by large-eddy simulation (LES) on FLUENT platform. Temperature at different positions of internal wall and mixing conditions of T-junctions at different times are obtained, then the simulated normalized mean and root-mean square (RMS) temperature, temperature contour and velocity vector of every case are compared. The results indicate that, the mixing regions in the tee junction is related to the jet type, and temperature fluctuations on the pipe wall in the type of the deflecting jet is the least.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.