• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.26-28
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• 1996

A high power SiGe HBT has been fabricated using APCVD(Atmospheric Pressure Chemical Vapor Deposition) and its perfermanoe has been analysed. The composition of Ge in the SiGe base was graded from 0% at the emitter-base junction to 20% at the base-collector junction. As a base electrode, titanium disilicide(TiSi$_2$) was used to reduce the extrinsic base resistance. The SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0GHz and a maximun oscillation frequency(f$_{max}$) of 16.1GHz with a pad de-embedding. The packaged high power SiGe HBT with an emitter area of 2xBx80${\mu}{\textrm}{m}$$^2$typically shows a cutoff frequency of 4.7GHz and a maximun oscillation frequency of 7.1GHz at Ic of 115mA.A.A.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.386-392
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• 1996

Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.4
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• pp.795-802
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• 2011

In this paper, the detailed design procedure of the Y-junction stripline isolator self-contained the filter circuit in the center conductor in order to maximize attenuations below value of 30 dB at 3rd order harmonics is presented. The HFSS is used to simulate 1.8GHz band isolator and the results are compared with the measurement data. These results confirms that the designed stripline isolator is effective in achieving high attenuation above -30 dB at 3rd order harmonics. And it is obtained that the harmonic band of isolator using the ferrite of 0.16T is moved far from operating frequency more 1.2 GHz than one using the ferrite of 0.12T.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.7
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• pp.128-134
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• 2010

In this paper, a high-power 20-way stripline power divider with low insertion loss and low side lobe level is successfully designed, fabricated and measured as a feed network for an S-band linear array antenna having Dolph-Chebyshev current distribution which has a narrow beam width and very low side lobe level (SLL). The 20-way stripline power divider consists of an 8-way power divider, three 4-way power dividers and three ring hybrids. It utilizes a T-junction structure as a basic element for power dividing. Notches and modified input/output N-to-stripline transitions are used for improving insertion loss and return loss. The fabricated power divider shows insertion loss less than 0.3 ㏈ and rms phase mismatch less than 8o in the full bandwidth. A final 40-way power divider is synthesized by combining symmetrically two 20-way power dividers and is expected to have SLL over 40 dB, based on the measured results of the 20-way power divider.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.2
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• pp.35-42
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• 2022

In this paper, a method to increase the combining efficiency and isolation of the combiner, the core module of SSPA (solid state amplifier), was studied. Specifically, the isolation was secured by matching the common port and the isolation port in the waveguide combiner. The matching structure for matching is in the form of a circular disk and is engraved inside the waveguide combiner. The structure is very simple, so it is possible to secure stable performance. And this structure showed more than 60 times higher critical power performance compared to previous studies, confirming that it is suitable for high output. And by combining 1-stage T-junction and 2, 3 stage MagicT combiner, miniaturization was achieved and the combining efficiency was optimized by reducing the insertion loss. The fabricated waveguide coupler obtained an isolation of 16dB or more and a coupling efficiency of 86.2%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.349-352
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• 1996

When the ideality factor of collector current of AIGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) is larger than unity, conventional $I_{CO}$ / $T^2$ versus 1000/T plot used in the determination of the barrier height of base-emitter junction of HBT was deviated from the straight line. We introduced the effective temperature $T_{eff}$ as nT in the Thermionic-emission equation. The modified $I_{CO}$ /TB versus 1000/ $T_{eff}$ plot was on the straight line in the temperature range considered. The activation energy obtained from the modified plot is 1.61 eV. The conduction band discontinuity calculated using this value was 0.305 eV and this value is coincident with the generally accepted value of 0.3 eV. eV.

• Investigative Magnetic Resonance Imaging
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• v.20 no.1
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• pp.44-52
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• 2016

Purpose: To quantitatively and qualitatively compare fat-suppressed MRI quality using iterative decomposition of water and fat with echo asymmetry and least-squares estimation (IDEAL) with that using frequency selective fat-suppression (FSFS) T2- and postcontrast T1-weighted fast spin-echo images of the head and neck at 3T. Materials and Methods: The study was approved by our Institutional Review Board. Prospective MR image analysis was performed in 36 individuals at a single-center. Axial fat suppressed T2- and postcontrast T1-weighted images with IDEAL and FSFS were compared. Visual assessment was performed by two independent readers with respect to; 1) metallic artifacts around oral cavity, 2) susceptibility artifacts around upper airway, paranasal sinus, and head-neck junction, 3) homogeneity of fat suppression, 4) image sharpness, 5) tissue contrast of pathologies and lymph nodes. The signal-to-noise ratios (SNR) for each image sequence were assessed. Results: Both IDEAL fat suppressed T2- and T1-weighted images significantly reduced artifacts around airway, paranasal sinus, and head-neck junction, and significantly improved homogeneous fat suppression in compared to those using FSFS (P < 0.05 for all). IDEAL significantly decreased artifacts around oral cavity on T2-weighted images (P < 0.05, respectively) and improved sharpness, lesion-to-tissue, and lymph node-to-tissue contrast on T1-weighted images (P < 0.05 for all). The mean SNRs were significantly improved on both T1- and T2-weighted IDEAL images (P < 0.05 for all). Conclusion: IDEAL technique improves image quality in the head and neck by reducing artifacts with homogeneous fat suppression, while maintaining a high SNR.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.159-163
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• 2000

MR characteristics in magnetic tunnel junction using CoO as the oxide barrier were investigated. Spin-dependent tunnel junctions were fabricated on 4$\^$o/ tilt-cut (111)Si substrates in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$\_$80/Fe$\_$20/(300 $\AA$) and Co(300 $\AA$), respectively. The oxide barriers (CoO) were formed by the thermal oxidation at room temperature in an O$_2$ atmosphere and the plasma oxidation. The increase of coercive field due to antiferromagnetic-ferromagnetic coupling has been observed in O$_2$plasma-oxidized CoO based junctions at room temperature. At a sensing current of 1 mA, MR ratios of O$_2$plasma-oxidized CoO based junction and thermal-oxidized CoO based junction at room temperature were 1% and 5%, respectively. Larger MR ratios are observed in magnetic tunnel juctions with thermal oxidized CoO when sensing current more than applied 1.5 mA. At a sensing current of 1.5 mA, we have observed MR value of 28 % and specific resistance (RA=R$\times$A) value of 10.9 ㏀$\times$㎛$^2$. When specific resistance values reached 2.28 ㏀$\times$㎛$^2$, we have observed that MR ratios become as high as 120%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.3
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• pp.1-8
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• 1968

This thermcelectrie generator devices have been determined for bismuth alloys, Sb2T and AnSb containing small amounts of doping materials. The thermoeleotric matermoelectric power;$\alpha$; resistivity; $\rho$, heatconduction; k, and temperature difference between cold and hot junction was measured. Generator consisting both B T + B S and B T+S T is better efficient than others containing another thermoceuple matarials. Its efficiency is 1.42%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.721-726
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• 2003

This paper present a waveguide slot 16${\times}$16 assay antenna with diaphragms for 38 GHz frequency band. Diaphragms are used to control the impedance and to minimize the return loss of the structure. A 20 dB Chebyshev array of 16 waveguide slots has been designed by optimizing the positions and sizes of the diaphragms. A serial feeding system with $\pi$- and T-junction power dividers has also designed to get a 20 dB Chebyshev power distribution. A 16${\times}$16 slot array was designed for a Fixed Wireless Access System at 38 GHz frequency band, manufactured using a computer controlled milling technique, and measured for the return -19 dB and the frequency band of 740 MHz.