A 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier using the trapezoid mesa and the upper half of sidewall (Trapezoid mesa와 Half Sidewall Technique을 이용한 4H-SiC Trench MOS Barrier Schottky(TMBS) Rectifier)
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- Journal of IKEEE
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- v.17 no.4
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- pp.428-433
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- 2013