• Journal of the Korean Solar Energy Society
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• v.40 no.5
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• pp.23-34
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• 2020

Concentrator photovoltaic (CPV) system consists of high-quality complex optical elements, mechanical devices, and electronics components and can have the advantages of high integration and high-efficiency energy sources. III-V compound semiconductor cells have proven performance based on high reliability in the aerospace field, but have characteristics that require absolute support of the balance of systems (BOS) such as solar position trackers, receivers with heat sinks, and housing instruments. To determine the optimum parameters of secondary optical elements (SOEs) design for CPV systems, we designed three types of CPV modules, classified as non-SOEs type, reflective mirror type, and CPC lens type. We measured the I-V and P-V characteristics of the prototype CPV modules with the angle of inclination varying from 0° to 12° and with a 500-magnification Fresnel lens. The experimental results assumed misalignment of the solar position tracker or module design of pinpoint accuracy. As a result, at the 0° tilt angle, the CPC lens produced lower power due to the quartz transmittance ratio compared to that by other SOEs. However, for tilt angles greater than 3°, the CPC lens type module achieved high efficiency and stability. This study is expected to help design high-performance CPV systems.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.4
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• pp.729-736
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• 2018

Due to the frequency offset, interchannel interference (ICI) is occurred in the received symbols of the orthogonal frequency division multiplexing (OFDM) systems. The ICI self-cancellation (ICI-SC) technique appropriately adjusts the subchannel signal assignment of the OFDM symbols, thereby canceling the interference caused by other subchannels. The conventional adjacent symbol repetition (ASR) method can reduce the interference caused by remote subchannels. However, it may not mitigate or even increases the ICI produced by some nearest subchannels. To solve the problem, a new ASR based ICI-SC technique is proposed and its performance is analyzed in this paper. Here, a t-parameter obtained by the interference coefficients of 3 successive subchannels is applied. As a result, the proposed method has the same capability to reduce the influence of remote subchannels. However, it can reduce the ICI caused by the nearest subchannels significantly.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.917-922
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• 2018

In the conventional interchannel interference self-cancellation (ICI-SC) schemes, the length of sampling window is the same as the symbol length of orthogonal frequency division multiplexing (OFDM). Thus, the number of complex operations to compute the interference coefficient of each subchannel is significantly increased. To solve this problem, we present an approximated mathematical model for the coefficients of ICI-SC schemes. Based on the proposed approximation, we analyze mean squared error (MSE) and computational complexity of the ICI-SC schemes with the length of sampling window. As a result, the presented approximation has an error of less than 0.01% on the MSE compared to the original equation. When the number of subchannels is 1024, the number of complex computations for the interference coefficients is reduced by 98% or more. Since the computational complexity can be remarkably reduced without sacrificing the self-cancellation capability, it is considered that the proposed approximation is very useful to develop an algorithm for the ICI-SC scheme.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.2
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• pp.20-27
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• 2007

[ $SF_6$ ] gas for compacted power facilities has a important role as an insulation gas. It is very blown well that $SF_6$ gas has the superior characteristics as an insulation gas. For reliable operation of SF6-gas-based high and medium voltage equipment it is very important to keep the insulation ability within a safe range. And the experimental and measuring system were implemented. The test chamber designed to endure up to 3 atmospheric pressure. The analysis results of the experimental data shows that positive partial discharge can be detected by discharge current and UHF signal. Additionally it is shown the possibility that $CO_2$ gas sensor of semiconductor type can be detect the variation of $SF_6$ gas condition. The UHF sensor shows good feature to detect the variation of $SF_6$ gas condition for partial discharge and breakdown discharge.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.5
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• pp.343-354
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• 2009

In this paper, a magnetic-less dc-dc switching converter realizing an integrable power conversion system is described. Instead of magnetic devices, the inductive impedance range of piezoelectric transducers is utilized to store and resonate the energy for soft-switching. Piezoelectric devices have no windings and deliver the power by the electrodes, which lead to mass product through semiconductor-manufacturing process. This paper presents a resonant-type step-up dc-dc power converter employing a disk-type piezoelectric transducer, analyzing the operation principles and the frequency control characteristics. Also, a topology extension of the single stage converter into cascaded multi-stage is presented and analyzed with the operation principles and control characteristics. For verification of the analysis, a 10W output dc-dc power converter hardware was implemented. The hardware experiments shows a good frequency control and power efficiency greater than 96% in the single stage. A hardware prototype of the extended multi-stage one was also realized and tested. The results shows that the converter has the same frequency control performance and high efficiency such as 93%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.563-565
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• 2010

LED is low power and pro-environment semiconductor element. That can be used not only as the lighting function but also for Visible Light Communication(VLC). The VLC is the communication technology that can send data by blinking a fluorescent or LED using visible spectrum. That velocity of blinking can not be usually recognized by eyesight. Visible Light Communication using LED can be used in many fields. In the field of ITS(Intelligent Transportation System), Under construction on the road, Emitting traffic signs can be applied to transfer the vehicle information. In this paper, Emitting traffic signs in addition to the VLC give information about road condition, safety distance and the lane change. We design Communication protocol to provide safety service and verify protocol by experiment.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.226-229
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• 2010

LED(Light Emitting Diode) is an emitting device which energy is same to the bandgap of p-type and n-type semiconductor junction. Recently high brightness LED is used in fish-luring light and traffic signal light alternative of normal light bulb, and widely used in the area of display pannel. Moreover nowadays LED has been used as a back light of LCD display. Recently, visible light communication(VLC) using LED, that allow two-way serial data communication between LEDs over a distance of sveral centimeters or meters, has been widely studied in the area of digital information transmission along with illumination and display. In this paper, we present LED communication system and their applications.